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公开(公告)号：US20250015562A1
公开(公告)日：2025-01-09
申请号：US18888156
申请日：2024-09-18
Applicant: ASAHI KASEI KABUSHIKI KAISHA , National University Corporation Tokai National Higher Education and Research System
Inventor： Ziyi ZHANG , Maki KUSHIMOTO , Chiaki SASAOKA , Hiroshi AMANO
Abstract: A method of producing an ultraviolet laser diode with a low oscillation threshold current density includes stacking a first cladding layer, a light-emitting layer, and a second cladding layer on a substrate in this order to form a nitride semiconductor laminate (step S101), etching at least a portion of the nitride semiconductor laminate to form a mesa structure and setting the ratio between the length of the resonator end faces and the length of the side surfaces of the mesa structure in plan view between 1:5 and 1:500 (step S102), disposing first conductive material on a portion of a first area and applying heat treatment of 400° C. or higher to form a first electrode (step S103), and disposing a second conductive material in an area on the second cladding layer, at a distance of 5 μm or more from the side surfaces, to form a second electrode (step S104).
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公开(公告)号：US20240388059A1
公开(公告)日：2024-11-21
申请号：US18662489
申请日：2024-05-13
Applicant: SEOUL NATIONAL UNIVERSITY R&DB FOUNDATION
Inventor： Heonsu JEON , Myeongeun KIM
Abstract: Provided is a photonic crystal laser device including a lower electrode layer on a top surface or bottom surface of a substrate, a guide layer on the lower electrode layer, an upper electrode layer on the guide layer, a lower clad layer between the lower electrode layer and the guide layer, and an upper clad layer between the guide layer and the upper electrode layer. The guide layer includes an active layer therein. A crystal hole is provided that penetrates the upper clad layer in a vertical direction and extends toward the guide layer. A lower end of the crystal hole is defined to be at a height higher than or at the same height as a top surface of the active layer.
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公开(公告)号：US12136795B2
公开(公告)日：2024-11-05
申请号：US17600415
申请日：2019-06-27
Applicant: Mitsubishi Electric Corporation
Inventor： Atsushi Era
Abstract: A method of manufacturing an optical semiconductor device includes a step of forming semiconductor layers on the surface of an n-type InP substrate; an etching step of forming an active layer ridge by etching part of the semiconductor layers; a cleaning step of removing Si having adhered to the surface of the etched semiconductor layers while feeding a source gas for the crystal growth and an etching gas; and a crystal growth step of forming buried layers along both sidewalls of the active layer ridge at a processing temperature higher than that in the cleaning step, and the cleaning step is performed with the ridge being kept in shape.
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公开(公告)号：US12132522B1
公开(公告)日：2024-10-29
申请号：US18214191
申请日：2023-06-26
Applicant: CABLE TELEVISION LABORATORIES, INC.
Inventor： Haipeng Zhang , Junwen Zhang , Mu Xu , Zhensheng Jia , Luis Alberto Campos
CPC classification number: H04B10/504 , G02B27/283 , G02B27/286 , G02F1/218 , H01S5/3224 , H01S5/32391 , H04B10/25 , H04B10/5161 , G02F1/212
Abstract: An optical full-field transmitter for an optical communications network includes a primary laser source configured to provide a narrow spectral linewidth for a primary laser signal, and a first intensity modulator in communication with a first amplitude data source. The first intensity modulator is configured to output a first amplitude-modulated optical signal from the laser signal. The transmitter further includes a first phase modulator in communication with a first phase data source and the first amplitude-modulated optical signal. The first phase modulator is configured to output a first two-stage full-field optical signal. The primary laser source has a structure based on a III-V compound semiconductor.
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公开(公告)号：US20240235163A9
公开(公告)日：2024-07-11
申请号：US18548782
申请日：2022-03-04
Applicant: 3SP Technologies
Inventor： Mauro BETTIATI
IPC: H01S5/32
CPC classification number: H01S5/3216
Abstract: The present invention relates to a semiconductor optoelectronic device (10) comprising a junction (12) consisting a stack of layers defining an N-doped region, an intermediate region and a P-doped region, at least one layer, called a modulated layer, of the N-doped region and/or of the P-doped region and/or of the intermediate region, being formed of a plurality of stacks of sub-layers, each sub-layer differing from the other sub-layers of the same stack by a feature of the material of the sub-layer, called a distinctive feature, the thicknesses and distinctive features of the sub-layers being chosen so as to reduce the absorption of photons in the corresponding region compared with a semiconductor optoelectronic device, known as a reference device, the only difference being that each modulated layer is replaced by an unmodulated layer of the same thickness as the modulated layer and with identical features except for the distinctive feature.
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公开(公告)号：US12007504B2
公开(公告)日：2024-06-11
申请号：US16801231
申请日：2020-02-26
Applicant: Vixar, Inc.
Inventor： Matthew Dummer , Klein L. Johnson , Mary Hibbs-Brenner , Dadi Setiadi , Benjamin Olson
CPC classification number: G01S7/4815 , G01S7/4813 , H01S5/0234 , H01S5/0264 , H01S5/04256 , H01S5/06203 , H01S5/18305 , H01S5/32 , H01S5/423
Abstract: Systems and methods disclosed herein include an illumination module for 3D sensing applications. The illumination module may include an array of vertical cavity surface emitting lasers (VCSELs) emitting light, a driver configured to provide current to the array of VCSELs, and an optical element configured to receive the light emitted by the array of VCSELs and output a light pattern from the illumination module.
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公开(公告)号：US11967800B2
公开(公告)日：2024-04-23
申请号：US18199960
申请日：2023-05-21
Applicant: TRUELIGHT CORPORATION
Inventor： Chien Hung Pan , Cheng Zu Wu
CPC classification number: H01S5/11 , H01S5/1215 , H01S5/124 , H01S5/183 , H01S5/185 , H01S5/3211 , H01S2304/04
Abstract: The grating layer of a surface emitting laser is divided into a first grating region and a second grating region along a horizontal direction. The second grating region is located at a middle area of the grating layer, while the first grating region is located in an outer peripheral area of the grating layer. Each of the first and second grating regions comprises a plurality of micro-grating structures. The grating period of the micro-grating structures in the first grating region is in accordance with the following mathematical formula:
∧
=
m
λ
2
⋆
n
eff
;
in addition, the grating period of the micro-grating structures in the second grating region is in accordance with the following mathematical formula:
∧
=
o
λ
2
⋆
n
eff
.
Wherein ∧ is the length of grating period, λ is the wavelength of the laser light, neff is the equivalent refractive index of semiconductor waveguide, m=1, and o=2. The first grating region is a first-order grating region, and the second grating region is a second-order grating region, so as to form a hybrid grating structure in the grating layer. The surface emitting laser emits laser light perpendicularly from a light-emitting surface defined by the second grating region.
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8.发明授权
公开(公告)号：US11909175B2
公开(公告)日：2024-02-20
申请号：US17148408
申请日：2021-01-13
Applicant: Apple Inc.
Inventor： Chih-Wei Chuang , Peter L. Chang , Tong Chen
CPC classification number: H01S5/187 , H01S5/028 , H01S5/0262 , H01S5/0264 , H01S5/18 , H01S5/3202 , H01S5/0287
Abstract: An optoelectronic device includes an off-cut III-V semiconductor substrate, a set of epitaxial layers formed on the off-cut III-V semiconductor substrate, and a horizontal cavity surface-emitting laser (HCSEL) having a laser resonant cavity formed in the set of epitaxial layers. The same or another optoelectronic device includes a semiconductor substrate; a laser, epitaxially grown on the semiconductor substrate and having a laser resonant cavity; a semiconductor device, epitaxially grown on the semiconductor substrate and separated from the laser by a single trench having a first vertical wall abutting the laser and a second vertical wall abutting the semiconductor device; and at least one coating on at least one of the first vertical wall or the second vertical wall. The laser resonant cavity of the laser has a horizontal portion parallel to the semiconductor substrate, and each of the first vertical wall and the second vertical wall is oriented perpendicular to the semiconductor substrate.
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公开(公告)号：US20240027766A1
公开(公告)日：2024-01-25
申请号：US18116735
申请日：2023-03-02
Applicant: KYOCERA SLD Laser, Inc.
Inventor： Paul Rudy , James W. Raring , Eric Goutain , Hua Huang
CPC classification number: G02B27/0172 , G02B6/00 , G02B27/017 , H01S5/4093 , H01S5/320275 , G02B2027/0178 , G02B27/4272
Abstract: The present invention is directed to wearable display technologies. More specifically, various embodiments of the present invention provide wearable augmented reality glasses incorporating projection display systems where one or more laser diodes are used as light source for illustrating images with optical delivery to the eye using transparent waveguides. In one set of embodiments, the present invention provides wearable augmented reality glasses incorporating projector systems that utilize transparent waveguides and blue and/or green laser fabricated using gallium nitride containing material. In another set of embodiments, the present invention provides wearable augmented reality glasses incorporating projection systems having digital lighting processing engines illuminated by blue and/or green laser devices with optical delivery to the eye using transparent waveguides. In one embodiment, the present invention provides wearable augmented reality glasses incorporating a 3D display system with optical delivery to the eye using transparent waveguides. There are other embodiments as well.
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公开(公告)号：US11817675B1
公开(公告)日：2023-11-14
申请号：US17142109
申请日：2021-01-05
Applicant: KYOCERA SLD Laser, Inc.
Inventor： James W. Raring , Paul Rudy
IPC: H01S5/042 , H01S5/323 , H01S5/343 , H01S5/40 , H01S5/00 , H01S5/02325 , F21S2/00 , H04N9/77 , H01S3/16 , H01S5/02208 , H01S5/026 , H01S5/22 , H01S5/02212 , H04N9/31 , F41H13/00 , H01S5/32 , F21V23/02
CPC classification number: H01S5/0428 , F21S2/00 , F41H13/0056 , H01S3/1603 , H01S3/1643 , H01S5/005 , H01S5/02208 , H01S5/02325 , H01S5/32341 , H01S5/34333 , H01S5/4012 , H04N9/77 , F21V23/02 , H01S5/026 , H01S5/02212 , H01S5/042 , H01S5/22 , H01S5/320275 , H01S5/4031 , H01S5/4087 , H04N9/31
Abstract: A laser illumination or dazzler device and method. More specifically, examples of the present invention provide laser illumination or dazzling devices power by one or more violet, blue, or green laser diodes characterized by a wavelength from about 390 nm to about 550 nm. In some examples the laser illumination or dazzling devices include a laser pumped phosphor wherein a laser beam with a first wavelength excites a phosphor member to emit electromagnetic at a second wavelength. In various examples, laser illumination or dazzling devices according to the present invention include polar, non-polar, or semi-polar laser diodes. In a specific example, a single laser illumination or dazzling device includes a plurality of violet, blue, or green laser diodes. There are other examples as well.
