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公开(公告)号：US07019601B2
公开(公告)日：2006-03-28
申请号：US10483682
申请日：2002-07-26
申请人： Michel Langlois
发明人： Michel Langlois
IPC分类号： H03F3/54
CPC分类号： H01J23/033 , H01J25/04 , H03F3/24 , H03F2200/198
摘要： The present invention pertains to an amplification device for a high-frequency signal. The invention is particularly adapted for the transmission of radiofrequency signals used for television of radio under frequency modulation. The amplification device for a high-frequency signal comprises of two amplification stages arranged in series, the first amplification stage being formed of a semiconductor preamplifier, the second amplification stage being formed of an electron tube cooled by the circulation of a fluid, the electron tube being arranged inside an enclosure intended to receive it. The semiconductor preamplifier is arranged in the enclosure and the preamplifier is cooled by the circulation of the fluid. The electron tube comprises a collector needing to be cooled by the circulation of the fluid, and the fluid circulates around a cooling circuit, in which the collector is connected in parallel with the preamplifier.
摘要翻译： 本发明涉及用于高频信号的放大装置。 本发明特别适用于在频率调制下用于无线电电视的射频信号的传输。 用于高频信号的放大装置包括串联布置的两个放大级，第一放大级由半导体前置放大器形成，第二放大级由电流管形成，电子管由流体的循环冷却，电子管 被布置在旨在接收它的外壳内。 半导体前置放大器布置在外壳中，前置放大器被流体的循环冷却。 电子管包括需要被流体循环冷却的收集器，并且流体在冷却回路周围循环，其中集电器与前置放大器并联连接。
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公开(公告)号：US5497053A
公开(公告)日：1996-03-05
申请号：US151678
申请日：1993-11-15
申请人： Cha-Mei Tang , Antonio C. Ting , Thomas A. Swyden
发明人： Cha-Mei Tang , Antonio C. Ting , Thomas A. Swyden
IPC分类号： G21K1/087 , H01J3/02 , H01J3/26 , H01J23/06 , H01J29/48 , H01J35/06 , H03F3/56 , G09G1/04 , G21K1/08 , H03F3/54
CPC分类号： H01J29/481 , G21K1/087 , H01J23/06 , H01J3/022 , H01J3/26 , H01J35/065 , H03F3/56
摘要： An electron deflection device responsive to an electrical input signal for producing an output signal includes a focusing array for producing a collimated electron beam input ribbon in the direction of a propagation axis, the input ribbon being elongated along an array axis perpendicular to the propagation axis, and being relatively thin along a deflection axis perpendicular to the array axis and to the propagation axis. The focusing array is preferably a linear array of gated cold cathode units with lens electrodes. The deflection device further includes first and second electrically conductive deflector faces, forming a deflection region therebetween and being disposed so that the propagation-axis passes through the deflection region. The deflection device further includes means responsive to the input signal for applying time varying potentials to the deflector faces so as to produce a modulated electric field in the deflection region for deflecting the input ribbon over the course of a temporal deflection cycle to produce a continuously modulated output ribbon. The deflection device further includes an anode section responsive to the continuously modulated output ribbon for producing an output signal.The output signal can be in the form of an electrical output signal or a chopped output ribbon suitable for input to a high power amplifier, such as a klystron, klystrode, traveling wave tube, distributed amplifier or a gigatron, or to a free electron laser.
摘要翻译： 响应于用于产生输出信号的电输入信号的电子偏转装置包括用于在传播轴线的方向上产生准直的电子束输入带的聚焦阵列，输入带沿垂直于传播轴线的阵列轴细长， 并且沿着垂直于阵列轴线和传播轴线的偏转轴线相对较薄。 聚焦阵列优选是具有透镜电极的门控冷阴极单元的线性阵列。 偏转装置还包括第一和第二导电偏转器面，在它们之间形成偏转区域并设置成传播轴线穿过偏转区域。 偏转装置还包括响应于输入信号的装置，用于向偏转器面施加时变电位，以便在偏转区域中产生调制电场，用于在时间偏转周期的过程中偏转输入色带，以产生连续调制 输出色带 偏转装置还包括响应于连续调制的输出带的阳极部分，用于产生输出信号。 输出信号可以是电输出信号或适于输入到诸如速调管，klystrode，行波管，分布式放大器或千兆位的大功率放大器的斩波输出带的形式，或者是自由电子激光 。
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公开(公告)号：US4814720A
公开(公告)日：1989-03-21
申请号：US195073
申请日：1988-05-17
CPC分类号： H01J25/44
摘要： In a forward wave low noise cross-field amplifier a slow wave structure is disposed about a predetermined portion of the cathode. The slow wave structure of the cathode is accurately proportioned and spaced to have a dispersion curve near to the dispersion of the slow wave structure of the anode to permit cross-coupling of the RF input from the slow wave structure of the anode to the slow wave structure of the cathode.
摘要翻译： 在正向波低噪声交叉场放大器中，围绕阴极的预定部分设置慢波结构。 阴极的慢波结构准确地成比例地并且间隔开以具有靠近阳极的慢波结构的色散的色散曲线，以允许从阳极的慢波结构到慢波的RF输入的交叉耦合 阴极的结构。
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公开(公告)号：US4677342A
公开(公告)日：1987-06-30
申请号：US697540
申请日：1985-02-01
CPC分类号： H01J1/32
摘要： The cathode and tube of this invention comprise a secondary emission semiconductor cathode in a crossed-field high power amplifier. A gallium arsenide semiconductor doped with an impurity to make it more conductive than intrinsic gallium arsenide has been found to perform better than prior art secondary emission cathodes when it is incorporated as a cathode in a high-power crossed-field amplifier tube operating at high average and peak current. With a gallium arsenide cathode, the crossed-field amplifier tube exhibits a radio frequency output pulse which has fast rise time and much reduced leading-edge jitter relative to performance of the same cross-field amplifier tube having a conventional secondary emission cathode.
摘要翻译： 本发明的阴极和管包括在交叉场高功率放大器中的二次发射半导体阴极。 已经发现掺杂杂质以使其比本征砷化镓更具导电性的砷化镓半导体在现有技术的二次发射阴极中作为阴极在比较高的平均值工作的大功率交叉场放大器管中表现得更好 和峰值电流。 使用砷化镓阴极，相对于具有常规二次发射阴极的相同交叉场放大器的性能，交叉场放大器管呈现射频输出脉冲，其具有快速上升时间和大大降低的前沿抖动。
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公开(公告)号：US3922616A
公开(公告)日：1975-11-25
申请号：US47231974
申请日：1974-05-22
申请人： US ARMY
发明人： WEINER MAURICE
CPC分类号： H03F5/00
摘要： A p -i-n semiconductor diode is used as the target for an electron-bombarded semiconductor amplifier. In such amplifiers, a form of evacuated electron tube has a conventional cathode, heater, and grid. However, the tube has the semiconductor diode target in place of the more conventional anode. A high beamaccelerating potential between the cathode and the target causes a high-velocity electron beam to bombard the target, which has its outer layer thin enough to permit the electrons to pass through to the intrinsic region of the diode, where the electrons generate electron-hole pairs. The semiconductor diode target is connected in series with an output load and a source of target bias potential that draws a current of the newly-created electron-hole pairs across the output load. The grid modulates the electron beam, which, in turn controls the current across the output load.
摘要翻译： 使用p + + i-n +半导体二极管作为电子轰击半导体放大器的目标。 在这种放大器中，抽真空的电子管的形式具有常规的阴极，加热器和电网。 然而，管具有半导体二极管靶，代替较传统的阳极。 阴极和靶之间的远光加速电位使得高速电子束轰击靶，其外层薄到足以允许电子通过二极管的本征区域，其中电子产生 电子 - 空穴对。 半导体二极管靶与输出负载和目标偏置电位的源串联连接，该源的目标偏置电位在输出负载上吸引新产生的电子 - 空穴对的电流。 电网调制电子束，电子束又控制输出负载上的电流。
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公开(公告)号：US3876954A
公开(公告)日：1975-04-08
申请号：US42761873
申请日：1973-12-26
申请人： HEWLETT PACKARD CO
发明人： HANSON DELON C
摘要： In a solid state microwave amplifier circuit, a plurality of amplifier stages are coupled together to form a power combiner. A loading circuit between the power combiner stages prevents power cancellation, and operation as locked oscillators is detected by a lock-sensing circuit.
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公开(公告)号：US3702413A
公开(公告)日：1972-11-07
申请号：US3702413D
申请日：1968-01-26
申请人： VARIAN ASSOCIATES
发明人： GLANCE BERNARD S
摘要： A crossed field microwave amplifier tube is disclosed. The amplifier employs a meander line slow wave circuit arranged for interaction with a stream of electrons to amplify signal radio frequency wave energy on the circuit to produce an amplified output signal. The meander line slow wave circuit includes a zigzag shaped conductor disposed over a ground plane member to define a meander line slow wave circuit. An insulative structure is disposed between the zig-zag conductor and the ground plane for insulatively supporting the zig-zag conductor over the ground plane. A conductive shield structure is provided which projects from the ground plane structure into the space between adjacent zig-zag portions of the zig-zag shaped conductor to decrease the capacitance between adjacent zig-zag portions of the meander line, thereby shaping the dispersion characteristic of the shielded meander line circuit to provide nearly constant phase velocity for r.f. wave energy within an ultra wide passband of the circuit. More particularly, the phase velocity within the passband of the circuit is constant to within 1 percent for 1 octave of bandwidth and constant to 1.5 percent for a 2 octave bandwidth. In a preferred embodiment, the insulative support structure is recessed into the ground plane structure to reduce the shunt capacity of the meander line to the dielectric support structure, thereby reducing the insertion loss of the circuit. In addition the conductive shield structure serves to shield the insulative support structure from sputtered cathode materials which would otherwise tend to be deposited on and to short out the insulative structure.
摘要翻译： 公开了一种交叉场微波放大管。 放大器采用曲折线慢波电路，布置成与电子流相互作用以放大电路上的信号射频波能量以产生放大的输出信号。 曲折线慢波电路包括设置在接地平面构件上的Z字形导体，以限定曲折线慢波电路。 在Z字形导体和接地平面之间设置一个绝缘结构，用于在接地平面上绝缘地支撑Z形导体。 提供了一种导电屏蔽结构，其从接地平面结构突出到锯齿形导体的相邻之字形部分之间的空间，以减小曲折线的相邻之字形部分之间的电容，从而使分散特性 屏蔽曲折线电路为rf提供几乎恒定的相速度 在电路的超宽通带内的波能量。 更具体地说，电路通带内的相位速度恒定在1倍频带宽度的1％以内，对于2倍频程带宽恒定在1.5％。 在优选实施例中，绝缘支撑结构凹入接地平面结构，以减少曲折线到电介质支撑结构的分流能力，从而减小电路的插入损耗。 此外，导电屏蔽结构用于屏蔽绝缘支撑结构免受溅射的阴极材料，否则其将倾向于沉积在绝缘结构上并使绝缘结构短路。
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8.发明授权Microwave tube amplifier circuit for aplitude modulated and frequency modulated microwave signal 失效用于微波调制和频率调制的微波信号的微波管放大器电路
公开(公告)号：US3676791A
公开(公告)日：1972-07-11
申请号：US3676791D
申请日：1971-03-12
申请人： THOMSON CSF
发明人： GUENARD PIERRE
CPC分类号： H03F3/54
摘要： Circuit improving the efficiency of microwave tubes for amplification of an amplitude and frequency modulated signal, comprising a conventional amplifier tube with an electron current control electrode, and a device for splitting the signal into two separate signals, one of them being the amplitude modulation envelope to be sent to said control electrode, the other being the microwave frequency-modulated signal alone, to be sent to the amplifier microwave input.
摘要翻译： 电路提高了用于放大幅度和频率调制信号的微波管的效率，包括具有电子电流控制电极的常规放大器管，以及用于将信号分离成两个分离信号的装置，其中之一是幅度调制包络 发送到所述控制电极，另一个是微波频率调制信号，被发送到放大器微波输入端。
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公开(公告)号：US3605034A
公开(公告)日：1971-09-14
申请号：US3605034D
申请日：1969-08-28
申请人： SPERRY RAND CORP
发明人： RUCKER CHARLES T , AMOSS JOHN W JR
摘要： A semiconductor diode interiorly coupled to fields within a coaxial line cavity resonator serves as a negative resistance device, amplifying the high frequency fields present within the cavity. The combination forms a single port microwave amplifier or oscillator. A simple resistor, placed in the diode bias circuit in series with the diode, eliminates spurious modes of high frequency oscillation within the cavity.
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公开(公告)号：US3533008A
公开(公告)日：1970-10-06
申请号：US3533008D
申请日：1967-06-28
申请人： GEN ELECTRIC
发明人： LEE CHONG W
CPC分类号： H03F3/12
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