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公开(公告)号：US20240356531A1
公开(公告)日：2024-10-24
申请号：US18639846
申请日：2024-04-18
发明人： Alexandre Augusto Shirakawa , Kwang Jae Shin , Jae Hyung Lee , Taecheol Shon , David Albert Feld , Zongliang Cao
CPC分类号： H03H9/58 , H03H9/0211 , H03H9/133 , H03H9/542 , H04B1/38
摘要： Aspects of this disclosure relate to a filter that includes a bulk acoustic wave resonator and a capacitor in parallel with the bulk acoustic wave resonator. The bulk acoustic wave resonator can include a first electrode, a second electrode, a piezoelectric layer positioned between the first electrode and the second electrode, and an acoustic reflector positioned between the first electrode and a substrate. The capacitor can include an electrode buried in a dielectric layer that is over the substrate. Related multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
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2.发明公开公开(公告)号：US20240356530A1
公开(公告)日：2024-10-24
申请号：US18639827
申请日：2024-04-18
发明人： Alexandre Augusto Shirakawa , Kwang Jae Shin , Jae Hyung Lee , Taecheol Shon , David Albert Feld , Zongliang Cao , Stephen Joseph Kovacic
CPC分类号： H03H9/568 , H03H9/0211 , H03H9/133 , H03H9/542
摘要： Aspects of this disclosure relate to a bulk acoustic wave component that includes a bulk acoustic wave resonator, a capacitor, and a circuit element electrically connected to the bulk acoustic wave resonator. The capacitor includes an electrode buried in dielectric material. The circuit element includes conductive material in the dielectric layer. Related filters, multiplexers, radio frequency modules, radio frequency systems, wireless communication devices, and methods are disclosed.
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公开(公告)号：US12113510B2
公开(公告)日：2024-10-08
申请号：US17339841
申请日：2021-06-04
发明人： Andrew Kay , Patrick Turner , Albert Cardona
CPC分类号： H03H9/54 , H03H3/02 , H03H9/02015 , H03H9/02157 , H03H9/02228 , H03H9/13 , H03H9/174 , H03H9/205 , H03H9/564 , H03H9/568 , H03H2003/023 , Y10T29/42
摘要： An acoustic resonator is fabricated with multiple piezoelectric plate thicknesses on a single chip. After conductor patterns are formed on a piezoelectric plate, the plate is bonded to a sacrificial substrate, with the conductor patterns facing the sacrificial substrate. The piezoelectric plate is then thinned to a desired thickness for shunt resonators. A mask is applied to the surface of the plate and selected areas of the piezoelectric plate are further thinned to a desired thickness for series resonators to form a thinned piezoelectric plate. A substrate with swimming pool cavities is bonded to the thinned piezoelectric plate, and the sacrificial substrate is removed.
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公开(公告)号：US20240333257A1
公开(公告)日：2024-10-03
申请号：US18616708
申请日：2024-03-26
申请人： Qorvo US, Inc.
发明人： Nadim Khlat
摘要： An acoustic tuning network is provided. In embodiments disclosed herein, the acoustic tuning network can be coupled in parallel to an acoustic resonator and tuned to either cancel an input current or an output current of the acoustic resonator. As such, it is possible to provide multiple acoustic tuning networks in an acoustic filter circuit having multiple acoustic resonators to enable a variety of application scenarios.
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公开(公告)号：US20240297634A1
公开(公告)日：2024-09-05
申请号：US18657884
申请日：2024-05-08
发明人： Katsuya DAIMON
CPC分类号： H03H9/14517 , H03H9/02015 , H03H9/02992 , H03H9/54
摘要： An acoustic wave device includes a support including a support substrate, a piezoelectric layer on the support, and an IDT electrode including busbars and electrode fingers, and a mass-adding film on the piezoelectric layer. In plan view as seen in a stacking direction in which the support and the piezoelectric layer are stacked, an acoustic reflector overlaps at least a portion of the IDT electrode. d/p is less than or equal to about 0.5, where d is a thickness of the piezoelectric layer and p is a center-to-center distance between adjacent electrode fingers. A region in which adjacent electrode fingers overlap each other when seen from an electrode-finger-facing direction is a crossing region. Regions between the crossing region and the pair of busbars include first and second gap regions. The mass-adding film overlaps the gap region in plan view and is on the second main surface of the piezoelectric layer.
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公开(公告)号：US20240283428A1
公开(公告)日：2024-08-22
申请号：US18444030
申请日：2024-02-16
发明人： Andrew Guyette , Pintu Adhikari , Santhosh Gottuparthy , Wei Yang
CPC分类号： H03H9/542 , H03H3/02 , H03H9/02228 , H03H9/173 , H03H9/564 , H03H9/566 , H03H2003/021
摘要： A filter is provided that includes resonators connected in series between first and second ports. Each of the resonators includes a piezoelectric layer; and an interdigital transducer (IDT) having a plurality of interleaved fingers at a surface of the piezoelectric layer. The piezoelectric layer and the IDT are configured such that a radio frequency signal applied to the IDT excites a primary shear acoustic mode in the piezoelectric layer. The filter includes a capacitor connected between ground and a node between the first bulk acoustic resonator and the second bulk acoustic resonator.
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公开(公告)号：US12068739B2
公开(公告)日：2024-08-20
申请号：US17404121
申请日：2021-08-17
申请人： X-Celeprint Limited
发明人： Christopher Bower , Matthew Meitl , Ronald S. Cok
IPC分类号： H03H9/64 , H03H3/00 , H03H3/007 , H03H3/02 , H03H3/08 , H03H9/00 , H03H9/02 , H03H9/05 , H03H9/54 , H03H9/56
CPC分类号： H03H9/64 , H03H3/007 , H03H3/02 , H03H3/08 , H03H9/02015 , H03H9/02543 , H03H9/0509 , H03H9/0585 , H03H9/54 , H03H9/564 , H03H2009/0019
摘要： A compound acoustic wave filter device comprises a support substrate having an including two or more circuit connection pads. An acoustic wave filter includes a piezoelectric filter element and two or more electrodes. The acoustic wave filter is micro-transfer printed onto the support substrate. An electrical conductor electrically connects one or more of the circuit connection pads to one or more of the electrodes.
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公开(公告)号：US12068733B2
公开(公告)日：2024-08-20
申请号：US18473670
申请日：2023-09-25
发明人： Jian Wang , Jie Zou , Gongbin Tang
摘要： A method for fabricating a film bulk acoustic resonator (FBAR) filter device is provided. The method includes: forming a first electrode of each one of a first resonator and a second resonator on a first surface of a piezoelectric layer, forming a first passivation layer of each one of the first resonator and the second resonator on a corresponding one of the first electrodes, forming a second electrode of each one of the first resonator and the second resonator on a second surface of the piezoelectric layer, conducting a radio frequency (RF) performance test on the FBAR filter device, adjusting a thickness of the second electrode of the first resonator based on a result of the RF performance test, and forming a second passivation layer of each one of the first resonator and the second resonator on a corresponding one of the second electrodes.
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公开(公告)号：US20240243719A1
公开(公告)日：2024-07-18
申请号：US18622920
申请日：2024-03-30
申请人： QXONIX, INC.
发明人： DARIUSZ BURAK , KEVIN J. GRANNEN , JACK LENELL
CPC分类号： H03H9/02259 , H03H3/02 , H03H9/02015 , H03H9/0207 , H03H9/02102 , H03H9/0211 , H03H9/02157 , H03H9/13 , H03H9/131 , H03H9/17 , H03H9/173 , H03H9/175 , H03H9/205 , H03H9/54 , H03H9/568 , H03H2003/021 , H03H2009/02165
摘要： Techniques for improving acoustic wave devices are disclosed, including filters, oscillators and systems that may include such devices. A first piezoelectric layer having a piezoelectrically excitable resonance mode may be provided. A second piezoelectric layer may also be provided. The first piezoelectric layer and the second piezoelectric layer may have respective thicknesses so that the acoustic wave device has a resonant frequency. A temperature compensating layer may be included. A substrate may be provided.
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公开(公告)号：US20240235518A1
公开(公告)日：2024-07-11
申请号：US18396294
申请日：2023-12-26
CPC分类号： H03H9/02102 , H01Q1/243 , H03H9/542 , H03H9/547
摘要： A filter module comprises a first terminal, a second terminal, and a filter disposed along each signal path extending from the first terminal to the second terminal, the filter including a plurality of series resonators and a plurality of shunt resonators disposed between the series resonators and a ground, at least one resonator among the plurality of series resonators and the plurality of shunt resonators being a first type of resonator with a temperature compensating layer for better temperature coefficient of frequency, at least one resonator among the plurality of series resonators and the plurality of shunt resonators being a second type of resonator without a temperature compensating layer.
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