Abstract:
A method of passive microwave component construction is disclosed. A metal conductor is sputtered on a silicon wafer to form a ground plane. A photoresist dielectric film is applied on top of the metal conductor. Photolithography is performed to construct a substrate structure using the photoresist. A metal conductor is sputtered through mask onto the substrate structure to form a top conductor. A development process is performed to remove unexposed photoresist leaving exposed photoresist between the top conduct and ground plane. A passive microwave component is also disclosed having a metal conductor on a silicon wafer providing a ground plane. A substrate deposited on the metal conductor formed during photolithography using a photoresist; and a top metal conduct on the narrow film substrate.
Abstract:
A new class of antennas and microwave components are introduced. In this approach a high-permittivity dielectric film is applied (i.e. printed) on a dielectric substrate, which may be grounded. By changing the shape of the high-permittivity film, different microwave devices {e.g. waveguides, filters, couplers, and antennas) are produced. By changing the size and permittivity of the high-permittivity film and dielectric substrate, these elements are designed at different frequencies for different applications. Highly-efficient microwave devices can result due to the absence of surface currents.