公开(公告)号：WO2015147785A1

公开(公告)日：2015-10-01

申请号：PCT/US2014/031604

申请日：2014-03-24

Applicant: INTEL CORPORATION ,  LEE, Kevin, J.

Inventor： LEE, Kevin, J.

IPC: H01L21/60 ,  H01L23/48

CPC classification number: H01L23/481 ,  H01L21/288 ,  H01L21/76829 ,  H01L21/76831 ,  H01L21/76873 ,  H01L21/76898 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/5329 ,  H01L24/02 ,  H01L24/05 ,  H01L25/0657 ,  H01L2224/02372 ,  H01L2224/05008 ,  H01L2224/05022 ,  H01L2224/05569 ,  H01L2225/06544

Abstract: Techniques are disclosed for forming a through-body- via (TBV) in a semiconductor die. In accordance with some embodiments, a TBV provided using the disclosed techniques includes a polymer-based barrier layer and an electrically conductive seed layer formed by applying an electrically conductive ink directly to the barrier layer and then curing it in situ. In some embodiments, after curing, the resultant seed layer may be a thin, substantially conformal, electrically conductive metal film over which the TBV interconnect metal can be deposited. In some example cases, a polyimide, parylene, benzocyclobutene (BCB), and/or polypropylene carbonate (PPC) barrier layer and an ink containing copper (Cu) and/or silver (Ag), of nanoparticle-based or metal complex -based formulation, may be used in forming the TBV. In some instances, the disclosed techniques may be used to address poor step coverage, low run rate, and/or high cost issues associated with existing physical vapor deposition (PVD) -based far- back-end-of-line (FBEOL) processes.

Abstract translation: 公开了用于在半导体管芯中形成贯穿体通孔（TBV）的技术。 根据一些实施例，使用所公开的技术提供的TBV包括基于聚合物的阻挡层和通过将导电油墨直接施加到阻挡层然后在原位固化而形成的导电种子层。 在一些实施方案中，固化后，所得种子层可以是薄的，基本上保形的导电金属膜，TBV互连金属可以沉积在其上。 在一些示例性情况下，基于纳米颗粒或基于金属络合物的聚酰亚胺，聚对二甲苯，苯并环丁烯（BCB）和/或聚丙烯碳酸酯（PPC）阻挡层和含有铜（Cu）和/或银（Ag） 配方，可用于形成TBV。 在一些情况下，所公开的技术可以用于解决与现有的基于物理气相沉积（PVD）的远程后端（FBEOL）过程相关联的差的步骤覆盖率，低运行速率和/或高成本问题 。

公开(公告)号：WO2010080275A2

公开(公告)日：2010-07-15

申请号：PCT/US2009/066933

申请日：2009-12-07

Applicant: INTEL CORPORATION ,  LEE, Kevin, J.

Inventor： LEE, Kevin, J.

IPC: H01L21/60

CPC classification number: H01L23/49816 ,  H01L23/3171 ,  H01L23/3192 ,  H01L23/562 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/81 ,  H01L2224/02166 ,  H01L2224/02175 ,  H01L2224/0219 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/05559 ,  H01L2224/05567 ,  H01L2224/05572 ,  H01L2224/11462 ,  H01L2224/11464 ,  H01L2224/13007 ,  H01L2224/13022 ,  H01L2224/13023 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13139 ,  H01L2224/13144 ,  H01L2224/13147 ,  H01L2224/13155 ,  H01L2224/13164 ,  H01L2224/13169 ,  H01L2224/16112 ,  H01L2224/17 ,  H01L2224/81191 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2924/00013 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01019 ,  H01L2924/01027 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/14 ,  H01L2924/15747 ,  H01L2924/19041 ,  H01L2924/3511 ,  H01L2924/3512 ,  H01L2924/35121 ,  H01L2924/3841 ,  H01L2224/29099 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/0665

Abstract: An apparatus comprises a semiconductor substrate having a device layer, a plurality of metallization layers, a passivation layer, and a metal bump formed on the passivation layer that is electrically coupled to at least one of the metallization layers. The apparatus further includes a solder limiting layer formed on the passivation layer that masks an outer edge of the top surface of the metal bump, thereby making the outer edge of the top surface non-wettable to a solder material.

Abstract translation: 一种装置包括具有器件层，多个金属化层，钝化层和形成在钝化层上的金属凸块的半导体衬底，其电耦合到至少一个金属化层。 该装置还包括形成在钝化层上的焊料限制层，其掩盖金属凸块的顶表面的外边缘，从而使顶表面的外边缘不能被焊料材料润湿。

公开(公告)号：WO2007127538A1

公开(公告)日：2007-11-08

申请号：PCT/US2007/064243

申请日：2007-03-16

Applicant: INVITROGEN CORPORATION ,  LEE, Kevin, J. ,  POLLOK, Brian, A. ,  ZHONG, Zhong

Inventor： LEE, Kevin, J. ,  POLLOK, Brian, A. ,  ZHONG, Zhong

IPC: C12Q1/68 ,  C07K19/00

CPC classification number: G01N33/542 ,  C07K2319/50 ,  C07K2319/71 ,  C07K2319/80 ,  C12N15/1055 ,  G01N2500/10

Abstract: The invention relates, in part, to methods for detecting, monitoring, measuring or assessing an interaction between at least two proteins. The invention also relates, in part, to methods for determining if a test compound, or a mix of compounds, modulates an interaction between at least two proteins. In some embodiments, determination is made possible via the use of two recombinant molecules, e.g., one of which contains a first protein cleavage site for a proteolytic molecules, and an activator of a gene. A second recombinant molecule may include a second protein and the proteolytic molecule. Various other formats are provided by the invention. In some embodiments, if the test compound binds to the first protein, a reaction is initiated whereby the activator is cleaved, and activates a reporter gene.

Abstract translation: 本发明部分地涉及用于检测，监测，测量或评估至少两种蛋白质之间相互作用的方法。 本发明还部分涉及用于确定测试化合物或化合物混合物是否调节至少两种蛋白质之间的相互作用的方法。 在一些实施方案中，通过使用两个重组分子（例如其中一个包含蛋白水解分子的第一蛋白切割位点）和基因的活化剂来进行测定。 第二重组分子可以包括第二蛋白质和蛋白水解分子。 本发明提供了各种其他格式。 在一些实施方案中，如果测试化合物与第一种蛋白质结合，则开始反应，由此激活剂被切割，并激活报告基因。

公开(公告)号：WO2007032793A1

公开(公告)日：2007-03-22

申请号：PCT/US2006/020810

申请日：2006-05-30

Applicant: SENTIGEN BIOSCIENCE, INC. ,  LEE, Kevin, J.

Inventor： LEE, Kevin, J.

IPC: C07H21/04 ,  C12Q1/68 ,  G01N33/53 ,  G01N33/567 ,  C12N15/63

CPC classification number: G01N33/5023

Abstract: The described invention shows how multiple interactions between two proteins of interest can be determined by observing activation or lack thereof of intracellular proteins, following interaction of ligand and receptor.

Abstract translation: 所描述的发明显示了在配体和受体的相互作用之后，可以通过观察细胞内蛋白质的活化或缺乏来确定两种感兴趣的蛋白质之间的多重相互作用。

公开(公告)号：WO2005098933A1

公开(公告)日：2005-10-20

申请号：PCT/US2005/009660

申请日：2005-03-24

Applicant: INTEL CORPORATION ,  BARNAK, John, P. ,  FELDEWERTH, Gerald, B. ,  FANG, Ming ,  LEE, Kevin, J. ,  HUANG, Tzuen-Luh ,  LIANG, Harry, Y. ,  SATTIRAJU, Seshu, V. ,  CHANG, Margherita ,  YEOH, Andrew, W., H.

Inventor： BARNAK, John, P. ,  FELDEWERTH, Gerald, B. ,  FANG, Ming ,  LEE, Kevin, J. ,  HUANG, Tzuen-Luh ,  LIANG, Harry, Y. ,  SATTIRAJU, Seshu, V. ,  CHANG, Margherita ,  YEOH, Andrew, W., H.

IPC: H01L21/60

CPC classification number: H01L24/13 ,  H01L24/11 ,  H01L2224/05001 ,  H01L2224/05009 ,  H01L2224/05022 ,  H01L2224/05027 ,  H01L2224/0508 ,  H01L2224/05572 ,  H01L2224/13099 ,  H01L2224/131 ,  H01L2224/13111 ,  H01L2924/0001 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/14 ,  H01L2924/1433 ,  H01L2924/19043 ,  H01L2924/30105 ,  H01L2924/351 ,  H01L2924/00014 ,  H01L2924/01083 ,  H01L2924/00

Abstract: Apparatus and methods of fabricating an under bump metallization structure including an adhesion layer abutting a conductive pad, a molybdenum-containing barrier layer abutting the adhesion layer, a wetting layer abutting the molybdenum-containing barrier layer, and high tin content solder material abutting the wetting layer. The wetting layer may be substantially subsumed in the high content solder forming an intermetallic compound layer. The molybdenum-containing barrier layer prevents the movement of tin in the high tin content solder material from migrating to dielectric layers abutting the conductive pad and potentially causing delamination and/or attacking any underlying structures, particularly copper structures, which may be present.

Abstract translation: 制造凸起下金属化结构的装置和方法，包括邻接导电垫的粘附层，邻接粘合层的含钼阻挡层，邻接含钼阻挡层的润湿层和与润湿剂邻接的高锡含量焊料 层。 润湿层可以基本上包含在形成金属间化合物层的高含量焊料中。 含钼阻挡层防止高锡含量焊料材料中锡的移动不会迁移到邻接导电焊盘的电介质层，并可能导致分层和/或攻击可能存在的任何下面的结构，特别是铜结构。

公开(公告)号：WO2003020913A2

公开(公告)日：2003-03-13

申请号：PCT/US2002/028315

申请日：2002-09-04

Applicant: SENTIGEN CORP. ,  LEE, Kevin, J. ,  ONG, Jane ,  NGUYEN, Thuy-Ai, T. ,  KLOSS, Brian

Inventor： LEE, Kevin, J. ,  ONG, Jane ,  NGUYEN, Thuy-Ai, T. ,  KLOSS, Brian

IPC: C12N

CPC classification number: C07K14/43563

Abstract: The present invention relates to Anopheles gambiae odorant receptor genes and methods for identifying odorant receptor genes. The invention provides nucleotide sequences of Anopheles gambiae odorant receptor genes, amino acid sequences of their encoded proteins (including peptides or polypeptides), and related products and methods. The nucleic acids of the invention may be operatively linked to promoter sequences and transformed into host cells. Methods of production of an odorant receptor protein (e.g., by recombinant means), and derivatives and analogs thereof, are provided. Antibodies to an odorant receptor protein, and derivatives and analogs thereof, are provided. Methods for identifying molecules that bind or modulate the activity of these odorant receptor genes are provided. Molecules found to bind or modulate the activity of odorant receptor genes may be formulated into pest control agents by providing a carrier. In a preferred embodiment, molecules that bind or modulate the activity of an odorant receptor gene from Anopheles gambiae but not others is desired. Methods to modify the insect behavior by modifying an odorant receptor are also provided.

Abstract translation: 本发明涉及冈比亚按摩感受器基因和鉴别加味剂受体基因的方法。 本发明提供了按蚊冈比亚气味受体基因的核苷酸序列，其编码的蛋白质（包括肽或多肽）的氨基酸序列以及相关产物和方法。 本发明的核酸可以可操作地连接到启动子序列并转化到宿主细胞中。 提供加味剂受体蛋白质的生产方法（例如，通过重组方法）及其衍生物和类似物。 提供了加味剂受体蛋白质的抗体及其衍生物和类似物。 提供了鉴定结合或调节这些加味剂受体基因的活性的分子的方法。 发现结合或调节加味剂受体基因活性的分子可通过提供载体而配制成害虫控制剂。 在优选的实施方案中，期望结合或调节来自冈比亚按蚊的加味剂受体基因的活性而不是其他的分子。 还提供了通过改变气味受体来改变昆虫行为的方法。

公开(公告)号：WO2008057837A9

公开(公告)日：2008-07-03

申请号：PCT/US2007082884

申请日：2007-10-29

Applicant: INTEL CORP ,  HE JUN ,  LEE KEVIN J ,  GADRE KAUSTUBH S ,  JOSHI SABHASH M

Inventor： HE JUN ,  LEE KEVIN J ,  GADRE KAUSTUBH S ,  JOSHI SABHASH M

IPC: H01L21/60 ,  H01L23/48

CPC classification number: H01L23/525 ,  H01L21/76834 ,  H01L21/76886 ,  H01L21/76888 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0231 ,  H01L2224/02333 ,  H01L2224/0401 ,  H01L2224/05022 ,  H01L2224/05572 ,  H01L2224/114 ,  H01L2224/1147 ,  H01L2224/116 ,  H01L2224/11912 ,  H01L2224/13022 ,  H01L2224/13099 ,  H01L2224/13111 ,  H01L2224/13147 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01024 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/01051 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/14 ,  H01L2924/19041 ,  H01L2924/19042 ,  H01L2924/19043 ,  H01L2224/05552

Abstract: An integrated circuit apparatus comprises a semiconductor substrate having a plurality of devices formed thereon, one or more metallization layers to interconnect the plurality of devices, and a bond pad formed over the one or more metallization layers and electrically coupled to at least one of the metallization layers. A first passivation layer is formed over the bond pad and over the metallization layers and a redistribution interconnect formed on the passivation layer. A first via formed through the first passivation layer electrically couples the redistribution interconnect to the bond pad. A second passivation layer is formed on the redistribution interconnect to prevent thermomechanical degradation and improve electromigration performance. A dielectric layer is formed on the second passivation layer and a die-side bump is formed on the dielectric layer. A second via formed through the dielectric layer and through the second passivation layer electrically couples the die-side bump to the redistribution interconnect.

Abstract translation: 集成电路装置包括具有形成在其上的多个器件的半导体衬底，用于互连多个器件的一个或多个金属化层以及形成在所述一个或多个金属化层上的接合焊盘，并且电连接至至少一个金属化层 层。 第一钝化层形成在接合焊盘上方和金属化层上方，以及形成在钝化层上的再分布互连。 通过第一钝化层形成的第一通孔将再分配互连电连接到接合焊盘。 在再分布互连上形成第二钝化层以防止热机械降解并改善电迁移性能。 在第二钝化层上形成电介质层，在电介质层上形成裸片侧凸点。 通过电介质层形成的第二通孔和通过第二钝化层电连接裸片侧凸起到再分布互连。

公开(公告)号：WO2006074144A3

公开(公告)日：2007-05-18

申请号：PCT/US2006000050

申请日：2006-01-04

Applicant: SENTIGEN BIOSCIENCES INC ,  LEE KEVIN J

Inventor： LEE KEVIN J

IPC: C07K14/705 ,  C07K19/00 ,  C12N15/62 ,  C12Q1/68

CPC classification number: C07K14/723 ,  C07K14/47 ,  C07K14/705 ,  C07K2319/01 ,  C07K2319/24 ,  C07K2319/40 ,  G01N33/542

Abstract: The invention involves receptor complexes which include, inter alia, a receptor protein, and a reporter molecule. There is at least one unnatural, or non-naturally occurring amino acid in the receptor molecule. When a ligand interacts with the receptor, the interaction causes the reporter to generate a detectable signal. The complexes are useful in cell free, assay systems and may be used as part of micelles.

Abstract translation: 本发明涉及受体复合物，其特别包括受体蛋白质和报告分子。 在受体分子中存在至少一种非天然或非天然存在的氨基酸。 当配体与受体相互作用时，相互作用会使报告基因产生可检测的信号。 该复合物可用于无细胞，测定系统，并可用作胶束的一部分。

公开(公告)号：WO2003020913A3

公开(公告)日：2003-03-13

申请号：PCT/US2002/028315

申请日：2002-09-04

Applicant: SENTIGEN CORP. ,  LEE, Kevin, J. ,  ONG, Jane ,  NGUYEN, Thuy-Ai, T. ,  KLOSS, Brian

Inventor： LEE, Kevin, J. ,  ONG, Jane ,  NGUYEN, Thuy-Ai, T. ,  KLOSS, Brian

IPC: C07K14/705 ,  C12N15/15 ,  G01N33/566 ,  C07K16/28

Abstract: The present invention relates to Anopheles gambiae odorant receptor genes and methods for identifying odorant receptor genes. The invention provides nucleotide sequences of Anopheles gambiae odorant receptor genes, amino acid sequences of their encoded proteins (including peptides or polypeptides), and related products and methods. The nucleic acids of the invention may be operatively linked to promoter sequences and transformed into host cells. Methods of production of an odorant receptor protein (e.g., by recombinant means), and derivatives and analogs thereof, are provided. Antibodies to an odorant receptor protein, and derivatives and analogs thereof, are provided. Methods for identifying molecules that bind or modulate the activity of these odorant receptor genes are provided. Molecules found to bind or modulate the activity of odorant receptor genes may be formulated into pest control agents by providing a carrier. In a preferred embodiment, molecules that bind or modulate the activity of an odorant receptor gene from Anopheles gambiae but not others is desired. Methods to modify the insect behavior by modifying an odorant receptor are also provided.

公开(公告)号：WO2015099668A1

公开(公告)日：2015-07-02

申请号：PCT/US2013/077559

申请日：2013-12-23

Applicant: INTEL CORPORATION ,  LEE, Kevin, J. ,  SARASWAT, Ruchir ,  ZILLMANN, Uwe ,  COWLEY, Nicholas, P. ,  SCHAEFER, Andre ,  JAIN, Rinkle ,  DROEGE, Guido

Inventor： LEE, Kevin, J. ,  SARASWAT, Ruchir ,  ZILLMANN, Uwe ,  COWLEY, Nicholas, P. ,  SCHAEFER, Andre ,  JAIN, Rinkle ,  DROEGE, Guido

IPC: H01L27/108

CPC classification number: H01L23/5223 ,  H01L21/4846 ,  H01L21/486 ,  H01L21/4875 ,  H01L21/76898 ,  H01L21/8221 ,  H01L23/481 ,  H01L23/492 ,  H01L23/498 ,  H01L23/49827 ,  H01L23/49838 ,  H01L23/49894 ,  H01L25/0657 ,  H01L27/0629 ,  H01L28/90 ,  H01L2225/06544 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Techniques are disclosed for forming a through-body-via (TBV) isolated coaxial capacitor in a semiconductor die. In some embodiments, a cylindrical capacitor provided using the disclosed techniques may include, for example, a conductive TBV surrounded by a dielectric material and an outer conductor plate. The TBV and outer plate can be formed, for example, so as to be self-aligned with one another in a coaxial arrangement, in accordance with some embodiments. The disclosed capacitor may extend through the body of a host die such that its terminals are accessible on the upper and/or lower surfaces thereof. Thus, in some cases, the host die can be electrically connected with another die to provide a die stack or other three-dimensional integrated circuit (3D IC), in accordance with some embodiments. In some instances, the disclosed capacitor can be utilized, for example, to provide integrated capacitance in a switched-capacitor voltage regulator (SCVR).

Abstract translation: 公开了用于在半导体管芯中形成通孔通孔（TBV）隔离同轴电容器的技术。 在一些实施例中，使用所公开的技术提供的圆柱形电容器可以包括例如由介电材料和外导体板包围的导电TBV。 根据一些实施例，TBV和外板可以例如形成为以同轴布置彼此自对准。 所公开的电容器可以延伸穿过主模具的主体，使得其端子在其上表面和/或下表面上可接近。 因此，根据一些实施例，在一些情况下，主体管芯可以与另一个管芯电连接以提供管芯堆叠或其他三维集成电路（3D IC）。 在一些情况下，所公开的电容器可用于例如在开关电容器电压调节器（SCVR）中提供集成电容。