公开(公告)号：WO2010093871A2

公开(公告)日：2010-08-19

申请号：PCT/US2010/024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES ,  BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

Inventor： BUFF, James, S. ,  RADOVANOV, Svetlana ,  KOO, John (Bon Woong) ,  PLATOW, Wilhelm, P. ,  SINCLAIR, Frank ,  LISCHER, D., Jeffrey ,  CHANEY, Craig, R. ,  BORICHEVSKY, Steven, C. ,  JAGTAP, Mayur ,  COBB, Eric, R. ,  PURSER, Kenneth, H. ,  PATEL, Shardul ,  BENVENISTE, Victor, M.

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明电极提高离子束质量的技术。 在一个特定的示例性实施例中，技术可以被实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中离子源包括具有离子束穿过其中的孔的面板。 该装置还可以包括至少包括抑制电极和高透明度接地电极的一组提取电极，其中所述提取电极组可以经由面板从离子源提取离子束，并且其中高透明度接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体传导，以改善提取的离子束质量。

公开(公告)号：WO2009064974A3

公开(公告)日：2009-08-06

申请号：PCT/US2008083540

申请日：2008-11-14

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  LISCHER D JEFFREY ,  STONE DALE K ,  STONE LYUDMILA ,  SUURONEN DAVID ,  BLAKE JULIAN G

Inventor： LISCHER D JEFFREY ,  STONE DALE K ,  STONE LYUDMILA ,  SUURONEN DAVID ,  BLAKE JULIAN G

IPC: H01L21/683 ,  H01L21/687

CPC classification number: H01L21/6831

Abstract: An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.

Abstract translation: 静电卡盘包括具有多个突起以支撑工件的层，其中该层的至少一部分具有第一多个多个突起。 第一多个突起间隔几何形成六边形图案。 第一多个突起可以与相邻的突起间隔开相等的距离，并且等距离可以是距离一个突起的中心到另一个突起的中心的约4.0毫米。 本公开减少了沿着每个突起的边缘常规存在的峰值机械应力水平。 降低这种机械应力水平有助于减少支撑的工件的背面损坏，这又可以减少由这种损坏引起的不想要的颗粒的产生。

公开(公告)号：WO2009064974A2

公开(公告)日：2009-05-22

申请号：PCT/US2008/083540

申请日：2008-11-14

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  LISCHER, D., Jeffrey ,  STONE, Dale, K. ,  STONE, Lyudmila ,  SUURONEN, David ,  BLAKE, Julian, G.

Inventor： LISCHER, D., Jeffrey ,  STONE, Dale, K. ,  STONE, Lyudmila ,  SUURONEN, David ,  BLAKE, Julian, G.

IPC: H01L21/683 ,  H01L21/68

CPC classification number: H01L21/6831

Abstract: An electrostatic chuck includes a layer having a plurality of protrusions to support a workpiece, wherein at least a portion of the layer has a first plurality of the plurality of protrusions. The first plurality of protrusions is spaced to geometrically form a pattern of hexagons. The first plurality of protrusions may be spaced an equal distance from adjacent protrusions and the equal distance may be about 4.0 millimeters from a center of one protrusion to a center of another protrusion. The present disclosure reduces peak mechanical stress levels conventionally present along an edge of each protrusion. Reducing such mechanical stress levels helps reduce backside damage to a supported workpiece, which in turn can reduce the generation of unwanted particles caused by such damage.

Abstract translation: 静电吸盘包括具有多个支撑工件的突起的层，其中该层的至少一部分具有第一多个多个突起。 第一多个突起间隔开以几何形成六边形图案。 第一多个突起可以与相邻的突起间隔相等的距离，并且等距离可以从一个突起的中心到另一个突起的中心大约4.0毫米。 本公开减少沿着每个突起的边缘常规存在的峰值机械应力水平。 减少这种机械应力水平有助于减少对支撑工件的背面损伤，进而减少由此类损伤引起的不需要的颗粒的产生。

公开(公告)号：WO2007126966A3

公开(公告)日：2008-03-06

申请号：PCT/US2007007781

申请日：2007-03-28

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  LUBICKI PIORTR R ,  LOW RUSSELL ,  LISCHER D JEFFREY ,  KRAUSE STEPHEN E ,  HERMANSON ERIC D ,  OLSON JOSEPH C

Inventor： LUBICKI PIORTR R ,  LOW RUSSELL ,  LISCHER D JEFFREY ,  KRAUSE STEPHEN E ,  HERMANSON ERIC D ,  OLSON JOSEPH C

IPC: H01J37/16 ,  H01J37/317 ,  H01L21/265

CPC classification number: H01J37/16 ,  H01J37/3171 ,  H01J2237/026 ,  H01J2237/038

Abstract: An ion implantation system (100) includes an ion source (102) configured to provide an ion beam (152), a terminal structure (104) defining a cavity (110), the ion source at least partially disposed within the cavity, and an insulator system (162,171). The insulator system is configured to electrically insulate the terminal structure and is configured to provide an effective dielectric strength greater than about 72 kilovolts (kV) /inch in a region proximate at least one exterior surface of the terminal structure. A gas box insulator system to electrically insulate a gas box (106) of the ion implantation system is also provided.

Abstract translation: 离子注入系统（100）包括被配置为提供离子束（152）的离子源（102），限定空腔（110）的端子结构（104），离子源至少部分地设置在空腔内，以及 绝缘子系统（162,171）。 绝缘体系统被配置为使端子结构电绝缘并且被配置为在靠近端子结构的至少一个外表面的区域中提供大于约72千伏（kV）/英寸的有效介电强度。 还提供了一种用于使离子注入系统的气体箱（106）电绝缘的气体箱绝缘体系统。

公开(公告)号：WO2010093871A3

公开(公告)日：2010-11-04

申请号：PCT/US2010024025

申请日：2010-02-12

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

Inventor： BUFF JAMES S ,  RADOVANOV SVETLANA ,  KOO JOHN BON WOONG ,  PLATOW WILHELM P ,  SINCLAIR FRANK ,  LISCHER D JEFFREY ,  CHANEY CRAIG R ,  BORICHEVSKY STEVEN C ,  JAGTAP MAYUR ,  COBB ERIC R ,  PURSER KENNETH H ,  PATEL SHARDUL ,  BENVENISTE VICTOR M

IPC: H01L21/265

CPC classification number: H01J37/3171 ,  H01J27/024 ,  H01J37/08 ,  H01J37/09 ,  H01J37/304 ,  H01J2237/0453 ,  H01J2237/0458 ,  H01J2237/083 ,  H01J2237/24542

Abstract: Techniques for improving extracted ion beam quality using high-transparency electrodes are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for ion implantation. The apparatus may comprise an ion source for generating an ion beam, wherein the ion source comprises a faceplate with an aperture for the ion beam to travel therethrough. The apparatus may also comprise a set of extraction electrodes comprising at least a suppression electrode and a high-transparency ground electrode, wherein the set of extraction electrodes may extract the ion beam from the ion source via the faceplate, and wherein the high-transparency ground electrode may be configured to optimize gas conductance between the suppression electrode and the high-transparency ground electrode for improved extracted ion beam quality.

Abstract translation: 公开了使用高透明度电极改善提取离子束质量的技术。 在一个特定的示例性实施例中，可以将这些技术实现为用于离子注入的装置。 该装置可以包括用于产生离子束的离子源，其中该离子源包括具有用于离子束穿过其中的孔的面板。 该设备还可以包括一组提取电极，该组提取电极至少包括抑制电极和高透明度接地电极，其中该组提取电极可以经由面板从离子源提取离子束，并且其中高透明度的接地 电极可以被配置为优化抑制电极和高透明度接地电极之间的气体电导以改善提取的离子束质量。

公开(公告)号：WO2008067213A3

公开(公告)日：2008-09-12

申请号：PCT/US2007085119

申请日：2007-11-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ,  ENGLAND JONATHAN GERALD ,  MUKA RICHARD S ,  LISCHER D JEFFREY

Inventor： ENGLAND JONATHAN GERALD ,  MUKA RICHARD S ,  LISCHER D JEFFREY

IPC: H01J37/317 ,  H01L21/00

CPC classification number: H01J37/3171 ,  H01J2237/2001 ,  H01L21/67005

Abstract: Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.

Abstract translation: 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于低温离子注入的装置。 该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并有助于晶片在至少一个维度上的移动。 该设备还可以包括耦合到晶片支撑机构的冷却机构。 该冷却机构可以包括制冷单元，用于使至少一种冷却剂从制冷单元循环到晶片支撑机构的刚性管闭环以及一个或多个旋转轴承以联接刚性管以适应晶圆在 至少一个维度。

公开(公告)号：WO2008067213A2

公开(公告)日：2008-06-05

申请号：PCT/US2007/085119

申请日：2007-11-19

Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. ,  ENGLAND, Jonathan, Gerald ,  MUKA, Richard, S. ,  LISCHER, D., Jeffrey

Inventor： ENGLAND, Jonathan, Gerald ,  MUKA, Richard, S. ,  LISCHER, D., Jeffrey

IPC: H01J37/317 ,  H01L21/00

CPC classification number: H01J37/3171 ,  H01J2237/2001 ,  H01L21/67005

Abstract: Techniques for low-temperature ion implantation are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus for low-temperature ion implantation. The apparatus may comprise a wafer support mechanism to hold a wafer during ion implantation and to facilitate movement of the wafer in at least one dimension. The apparatus may also comprise a cooling mechanism coupled to the wafer support mechanism. The cooling mechanism may comprise a refrigeration unit, a closed loop of rigid pipes to circulate at least one coolant from the refrigeration unit to the wafer support mechanism, and one or more rotary bearings to couple the rigid pipes to accommodate the movement of the wafer in the at least one dimension.

Abstract translation: 公开了用于低温离子注入的技术。 在一个特定的示例性实施例中，可以将技术实现为用于低温离子注入的装置。 该装置可以包括晶片支撑机构，以在离子注入期间保持晶片，并且促进晶片在至少一个维度上的移动。 该装置还可以包括联接到晶片支撑机构的冷却机构。 冷却机构可以包括制冷单元，刚性管的闭环，以将来自制冷单元的至少一个冷却剂循环到晶片支撑机构，以及一个或多个旋转轴承，以连接刚性管以适应晶片的移动 至少一个维度。