公开(公告)号：WO2008156694A1

公开(公告)日：2008-12-24

申请号：PCT/US2008/007439

申请日：2008-06-13

Applicant: SANDIK 3D LLC ,  PETTI, Christopher, J. ,  HERNER, S., Brad

Inventor： PETTI, Christopher, J. ,  HERNER, S., Brad

IPC: H01L21/331 ,  H01L29/10 ,  H01L29/73 ,  H01L29/732 ,  H01L21/20 ,  H01L27/102

CPC classification number: H01L29/7317 ,  H01L27/1021 ,  H01L27/1022 ,  H01L29/1008 ,  H01L29/6625 ,  H01L29/66265 ,  H01L29/7322

Abstract: A semiconductor device and methods for forming the same are described, wherein the device comprises a bipolar transistor having a base region, an emitter region and a collector region, wherein the base region comprises polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide. The emitter region and collector region also may include polycrystalline semiconductor material formed by crystallizing silicon, germanium or silicon germanium in contact with a silicide, germanide or silicide germanide forming metal. The polycrystalline semiconductor material is preferably silicided polysilicon, which is formed in contact with C49 phase titanium suicide.

Abstract translation: 描述了半导体器件及其形成方法，其中器件包括具有基极区域，发射极区域和集电极区域的双极晶体管，其中基极区域包括通过使硅，锗或硅锗结晶而形成的多晶半导体材料 与硅化物，锗化锗或锗化硅化锗接触。 发射极区域和集电极区域还可以包括通过使硅，锗或锗锗与硅化物，锗化锗或锗化锗形成金属接触而形成的多晶半导体材料。 多晶半导体材料优选为与C49相钛硅化物接触形成的硅化多晶硅。