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1.发明申请POST-CMP FORMULATION HAVING IMPROVED BARRIER LAYER COMPATIBILITY AND CLEANING PERFORMANCE 审中-公开具有改进的障碍层相容性和清洁性能的后CMP制剂公开(公告)号：WO2013142250A1
公开(公告)日：2013-09-26
申请号：PCT/US2013/031299
申请日：2013-03-14
Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
Inventor： LIU, Jun , HURD, Trace Quentin , SUN, Laisheng , MEDD, Steven , JENQ, Shrane Ning
IPC: C11D3/28 , H01L21/304 , C11D3/30 , C11D3/60
CPC classification number: C11D7/3209 , C11D3/0042 , C11D3/0073 , C11D7/265 , C11D7/268 , C11D7/3218 , C11D7/3245 , C11D7/3281 , C11D7/34 , C11D11/0047 , H01L21/02074 , H01L21/7684 , H01L21/76843 , H01L23/53238 , H01L2924/0002 , H01L2924/00
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include at least one quaternary base, at least one amine, at least one azole corrosion inhibitor, at least one reducing agent, and at least one solvent. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device while being compatible with barrier layers, wherein the barrier layers are substantially devoid of tantalum or titanium.
Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括至少一种季碱，至少一种胺，至少一种唑类腐蚀抑制剂，至少一种还原剂和至少一种溶剂。 该组合物可与微电子器件的表面高效地清洁后CMP残留物和污染物质，同时与阻挡层相容，其中阻挡层基本上不含钽或钛。
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公开(公告)号：WO2014176193A1
公开(公告)日：2014-10-30
申请号：PCT/US2014/034872
申请日：2014-04-22
Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
Inventor： LIU, Jun , SUN, Laisheng , MEDD, Steven , BARNES, Jeffrey, A. , WRSCHKA, Peter , THOMAS, Elizabeth
CPC classification number: C11D3/0073 , C11D3/0042 , C11D3/30 , C11D11/0041 , C11D11/0047 , C23G1/18 , C23G1/20 , H01L21/02068 , H01L21/02074
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include corrosion inhibitor(s) and surfactant(s). The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物包括缓蚀剂和表面活性剂。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。
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公开(公告)号：WO2015116818A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/013521
申请日：2015-01-29
Applicant: ADVANCED TECHNOLOGY MATERIALS, INC. , ATMI TAIWAN CO., LTD.
Inventor： SUN, Laisheng , ZHANG, Peng , LIU, Jun , MEDD, Steven , BARNES, Jeffrey, A. , JENQ, Shrane, Ning
CPC classification number: C11D11/0047 , C11D1/62 , C11D3/0073 , C11D3/30 , C11D7/32 , C11D7/3209 , C23G1/20 , H01L21/02063 , H01L21/02065 , H01L21/02074
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of alkali hydroxides, alkaline earth metal hydroxides, and tetramethylammonium hydroxide. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含碱金属氢氧化物，碱土金属氢氧化物和四甲基氢氧化铵。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。
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公开(公告)号：WO2015116679A1
公开(公告)日：2015-08-06
申请号：PCT/US2015/013286
申请日：2015-01-28
Applicant: ADVANCED TECHNOLOGY MATERIALS, INC.
Inventor： LIU, Jun , BARNES, Jeffrey A. , ZHANG, Peng , SUN, Laisheng , MEDD, Steven
IPC: H01L21/304
CPC classification number: H01L21/02074 , C11D3/36 , C11D3/43 , C11D7/36 , C11D7/50 , C11D11/0047 , H01L21/02063
Abstract: A cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions are substantially devoid of amines and ammonium-containing salts. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.
Abstract translation: 一种清洁组合物和用于从具有所述残余物和污染物的微电子装置清洁后化学机械抛光（CMP）残留物和污染物的清洁组合物和方法。 清洁组合物基本上不含胺和含铵盐。 该组合物可以在不影响低k电介质材料或铜互连材料的情况下从微电子器件的表面高效地清洁后CMP残留物和污染物质。
