公开(公告)号：WO2014128267A2

公开(公告)日：2014-08-28

申请号：PCT/EP2014053457

申请日：2014-02-21

Applicant: ALTATECH SEMICONDUCTOR

Inventor： NAL PATRICE ,  BOREAN CHRISTOPHE ,  VITIELLO JULIEN

IPC: C23C16/455

CPC classification number: C23C16/45572 ,  C23C16/4401 ,  C23C16/4408 ,  C23C16/45504 ,  C23C16/45517 ,  C23C16/45521 ,  C23C16/4558

Abstract: A reactor device (1) for chemical vapour deposition comprises a reaction chamber (4) having a purge gas inlet (106). A gas discharge channel (100) is linked to said reaction chamber (4) via a circumferential opening (49a) in the inner wall (19) of said chamber. The reaction chamber (4) is arranged such that a purge gas stream (200) flows from the purge gas inlet (106) to the discharge channel (100). Said inner wall (19) of the reaction chamber comprises means for exchanging heat with the purge gas, for example fins.

Abstract translation: 用于化学气相沉积的反应器装置（1）包括具有吹扫气体入口（106）的反应室（4）。 气体排出通道（100）通过所述室的内壁（19）中的周向开口（49a）连接到所述反应室（4）。 反应室（4）布置成使得净化气体流（200）从净化气体入口（106）流到排放通道（100）。 反应室的所述内壁（19）包括用于与吹扫气体（例如翅片）进行热交换的装置。

公开(公告)号：WO2009136019A3

公开(公告)日：2009-12-30

申请号：PCT/FR2009000479

申请日：2009-04-22

Applicant: ALTATECH SEMICONDUCTOR ,  BOREAN CHRISTOPHE ,  DELCARRI JEAN-LUC

Inventor： BOREAN CHRISTOPHE ,  DELCARRI JEAN-LUC

IPC: C23C16/455

CPC classification number: C23C16/45565 ,  C23C16/4557 ,  C23C16/45574

Abstract: Device (1) for treating substrates, comprising a chamber (4) having controlled pressure and temperature, a substrate holder (5) positioned in the chamber (4), the chamber (4) comprising a gas inlet for carrying out a vapor phase deposition, and an upper wall (30) of the chamber equipped with a plurality of first channels (45) connected to a first inlet (11) and a plurality of second channels (37) connected to a second inlet (12), the first and second channels opening into the chamber (4) and being evenly distributed in the upper wall (30), a heating element (14) positioned above the upper wall (30) and a gas discharge ring (49) positioned between the upper wall (30) and the substrate holder (5), the upper wall (30) being electrically conducting and insulated relative to the substrate holder (5) so as to be able to apply a voltage between the upper wall (30) and the substrate holder (5).

Abstract translation: 用于处理基板的装置（1），包括具有受控压力和温度的室（4），位于所述室（4）中的基板保持器（5），所述室（4）包括用于进行气相沉积的气体入口 ，并且所述室的上壁（30）装备有连接到第一入口（11）的多个第一通道（45）和连接到第二入口（12）的多个第二通道（37），所述第一和 第二通道通向腔室4并均匀地分布在上壁30中，位于上壁30上方的加热元件14和位于上壁30之间的排气环49。 ）和衬底保持器（5），上壁（30）相对于衬底保持器（5）导电并绝缘，以便能够在上壁（30）和衬底保持器（5）之间施加电压 ）。