公开(公告)号：WO2017106089A1

公开(公告)日：2017-06-22

申请号：PCT/US2016/066130

申请日：2016-12-12

Applicant: APPLIED MATERIALS, INC.

Inventor： STONE, Peter ,  OLSEN, Christopher S. ,  KUO, Teng-Fang ,  HSIEH, Ping Han ,  DING, Zhenwen

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/67 ,  H01L21/311

CPC classification number: H01L21/02057 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02661 ,  H01L21/3065 ,  H01L21/3221 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process to form an etched surface of the silicon-containing substrate and forming an epitaxial layer on the etched surface of the silicon-containing substrate. The plasma etch process comprises flowing an etchant gas mixture comprising a fluorine-containing precursor and a hydrogen-containing precursor into a substrate-processing region of a first processing chamber and forming a plasma from the etchant gas mixture flowed into the substrate-processing region.

Abstract translation: 本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和设备。 更具体地，本公开的实施方式一般涉及在外延沉积之前用于表面准备的方法和装置。 在一个实施方式中，提供了一种处理基板的方法。 该方法包括通过使用等离子体蚀刻工艺蚀刻含硅衬底的表面以形成含硅衬底的蚀刻表面并在含硅衬底的蚀刻表面上形成外延层。 等离子体蚀刻工艺包括使包含含氟前体和含氢前体的蚀刻剂气体混合物流入第一处理室的衬底处理区域并且由流入衬底处理区域的蚀刻剂气体混合物形成等离子体。

公开(公告)号：WO2017087029A1

公开(公告)日：2017-05-26

申请号：PCT/US2016/035306

申请日：2016-06-01

Applicant: APPLIED MATERIALS, INC.

Inventor： BOYD, Wendell Glenn Jr ,  PARKHE, Vijay D. ,  KUO, Teng-Fang ,  DING, Zhenwen

IPC: H01L21/683 ,  H01L21/56 ,  H02N13/00 ,  B23Q3/15

CPC classification number: H01L21/6833 ,  C03C17/00 ,  H01L21/6875 ,  H01L21/68757

Abstract: A method of manufacturing an electrostatic chuck includes polishing a surface of a ceramic body of the electrostatic chuck to produce a polished surface and depositing a ceramic coating onto the polished surface of the ceramic body to produce a coated ceramic body. The method further includes disposing a mask over the coated ceramic coating, the mask comprising a plurality of elliptical holes and depositing a ceramic material through the plurality of elliptical holes of the mask to form a plurality of elliptical mesas on the coated ceramic body, wherein the plurality of elliptical mesas have rounded edges. The mask is then removed from the coated ceramic body and the plurality of elliptical mesas are polished.

Abstract translation: 一种制造静电吸盘的方法包括抛光静电吸盘的陶瓷体的表面以产生抛光表面并在陶瓷体的抛光表面上沉积陶瓷涂层以产生涂覆的陶瓷 身体。 该方法进一步包括在被涂覆的陶瓷涂层上设置掩模，该掩模包括多个椭圆形孔并且通过该掩模的多个椭圆形孔沉积陶瓷材料以在涂覆的陶瓷体上形成多个椭圆形台面，其中 多个椭圆台面具有圆形边缘。 然后从涂覆的陶瓷体上取下掩模，并抛光多个椭圆形台面。

公开(公告)号：WO2017053126A1

公开(公告)日：2017-03-30

申请号：PCT/US2016/051487

申请日：2016-09-13

Applicant: APPLIED MATERIALS, INC.

Inventor： OLSEN, Christopher S. ,  STONE, Peter ,  KUO, Teng-Fang ,  HSIEH, Ping Han ,  VELLAIKAL, Manoj

IPC: H01L21/3065 ,  H01L21/02 ,  H01L21/3213

CPC classification number: H01L21/02658 ,  H01J2237/334 ,  H01L21/02046 ,  H01L21/02049 ,  H01L21/02052 ,  H01L21/0206 ,  H01L21/02381 ,  H01L21/02521 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/3065 ,  H01L21/67167 ,  H01L21/67184 ,  H01L21/6719 ,  H01L21/68742

Abstract: Implementations of the present disclosure generally relate to methods and apparatuses for epitaxial deposition on substrate surfaces. More particularly, implementations of the present disclosure generally relate to methods and apparatuses for surface preparation prior to epitaxial deposition. In one implementation, a method of processing a substrate is provided. The method comprises etching a surface of a silicon-containing substrate by use of a plasma etch process, where at least one etching process gas comprising chlorine gas and an inert gas is used during the plasma etch process and forming an epitaxial layer on the surface of the silicon-containing substrate.

Abstract translation: 本公开的实施方式一般涉及用于在衬底表面上进行外延沉积的方法和装置。 更具体地，本公开的实施方案一般涉及在外延沉积之前用于表面制备的方法和装置。 在一个实施方式中，提供了一种处理衬底的方法。 该方法包括通过使用等离子体蚀刻工艺来蚀刻含硅衬底的表面，其中在等离子体蚀刻工艺期间使用包含氯气和惰性气体的至少一种蚀刻工艺气体，并且在等离子体蚀刻工艺的表面上形成外延层 含硅衬底。