公开(公告)号：WO2012060983A2

公开(公告)日：2012-05-10

申请号：PCT/US2011/055926

申请日：2011-10-12

Applicant: ASM AMERICA, INC.

Inventor： MILLIGAN, Robert, B. ,  LI, Dong ,  MARCUS, Steven

IPC: H01L21/205

CPC classification number: H01J37/32009 ,  C23C16/36 ,  C23C16/45542

Abstract: Methods and equipment for forming ternary metal alloys are provided. In some embodiments, TaCN thin films are deposited by exposing a substrate to alternating pulses of an organometallic tantalum precursor comprising nitrogen and carbon and hydrogen plasma. The stoichiometry of the film is tuned from carbon rich to nitrogen rich by adjusting the plasma parameters, particularly the plasma intensity. In this way, films with varied characteristics can be formed from the same precursor. For example, both n-type and p-type materials can be deposited in the same module using the same precursor.

Abstract translation: 提供了用于形成三元金属合金的方法和设备。 在一些实施例中，通过将衬底暴露于包含氮和碳的有机金属钽前驱体和氢等离子体的交替脉冲来沉积TaCN薄膜。 通过调整等离子体参数，特别是等离子体强度，将膜的化学计量从富碳到富氮进行调整。 这样，具有不同特性的膜可以由相同的前体形成。 例如，n型和p型材料可以使用相同的前体沉积在相同的模块中。

公开(公告)号：WO2010088015A2

公开(公告)日：2010-08-05

申请号：PCT/US2010/020443

申请日：2010-01-08

Applicant: ASM AMERICA, INC.

Inventor： MILLIGAN, Robert, B. ,  LI, Dong ,  MARCUS, Steven

IPC: H01L21/205 ,  H01L21/31

CPC classification number: H01L23/562 ,  C23C16/32 ,  C23C16/36 ,  C23C16/45542 ,  H01L21/28088 ,  H01L29/4966 ,  H01L29/517 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Methods of forming a conductive metal layer over a dielectric layer using plasma enhanced atomic layer deposition (PEALD) are provided, along with related compositions and structures. A plasma barrier layer is deposited over the dielectric layer by a non- plasma atomic layer deposition (ALD) process prior to depositing the conductive layer by PEALD. The plasma barrier layer reduces or prevents deleterious effects of the plasma reactant in the PEALD process on the dielectric layer and can enhance adhesion. The same metal reactant can be used in both the non-plasma ALD process and the PEALD process.

Abstract translation: 提供了使用等离子体增强原子层沉积（PEALD）在电介质层上形成导电金属层的方法以及相关组合物和结构。 在通过PEALD沉积导电层之前，通过非等离子体原子层沉积（ALD）工艺在电介质层上沉积等离子体阻挡层。 等离子体阻挡层减少或防止PEALD工艺中的等离子体反应物对电介质层的有害影响，并且可以增强附着力。 同样的金属反应物可用于非等离子体ALD工艺和PEALD工艺。

公开(公告)号：WO2009129332A2

公开(公告)日：2009-10-22

申请号：PCT/US2009/040705

申请日：2009-04-15

Applicant: ASM AMERICA, INC.

Inventor： LI, Dong ,  MARCUS, Steven ,  HAUKKA, Suvi, P. ,  LI, Wei-Min

IPC: H01L21/205 ,  H01L21/336 ,  H01L21/28 ,  H01L21/3205

CPC classification number: C23C16/32 ,  C23C16/45527 ,  H01L21/28088 ,  H01L21/28273 ,  H01L21/28562 ,  H01L21/76843 ,  H01L29/4966

Abstract: Methods of forming metal carbide films are provided. In some embodiments, a substrate is exposed to alternating pulses of a transition metal species and an aluminum hydrocarbon compound, such as TMA, DMAH, or TEA. The aluminum hydrocarbon compound is selected to achieve the desired properties of the metal carbide film, such as aluminum concentration, resistivity, adhesion and oxidation resistance. In some embodiments, the methods are used to form a metal carbide layer that determines the work function of a control gate in a flash memory.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施方案中，将基底暴露于过渡金属物质和铝烃化合物（例如TMA，DMAH或TEA）的交替脉冲。 选择铝烃化合物以实现金属碳化物膜的所需性质，例如铝浓度，电阻率，粘附性和抗氧化性。 在一些实施例中，所述方法用于形成确定闪速存储器中的控制栅极的功函数的金属碳化物层。

公开(公告)号：WO2008051851A1

公开(公告)日：2008-05-02

申请号：PCT/US2007/081960

申请日：2007-10-19

Applicant: ASM AMERICA, INC. ,  ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

Inventor： ELERS, Kai-erik ,  EILK, Glen ,  MARCUS, Steven

IPC: C23C16/08 ,  C23C16/32 ,  C23C16/50 ,  C23C16/455

CPC classification number: C23C16/32 ,  C23C16/45527 ,  C23C16/45542 ,  C23C16/515

Abstract: Methods of forming a metal carbide film are provided. In some embodiments, methods for forming a metal carbide film in an atomic layer deposition (ALD) type process comprise alternately and sequentially contacting a substrate in a reaction space with vapor phase pulses of a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. In other embodiments, methods of forming a metal carbide film in a chemical vapor deposition (CVD) type process comprise simultaneously contacting a substrate in a reaction space with a metal compound 102 and one or more plasma-excited species of a carbon-containing compound 106. The substrate is further exposed to a reducing agent 103. The reducing agent removes impurities, including halogen atoms and/or oxygen atoms.

Abstract translation: 提供了形成金属碳化物膜的方法。 在一些实施例中，用于在原子层沉积（ALD）型工艺中形成金属碳化物膜的方法包括交替地和顺序地将反应空间中的衬底与金属化合物102的气相脉冲和一种或多种等离子体激发的 在其它实施方案中，在化学气相沉积（CVD）型方法中形成金属碳化物膜的方法包括同时使反应空间中的底物与金属化合物102和一种或多种等离子体激发的物质 的底物进一步暴露于还原剂103.还原剂除去杂质，包括卤原子和/或氧原子。