SIMULTANEOUS EXTERNAL READ OPERATION DURING INTERNAL PROGRAMMING IN A FLASH MEMORY DEVICE
    1.
    发明申请
    SIMULTANEOUS EXTERNAL READ OPERATION DURING INTERNAL PROGRAMMING IN A FLASH MEMORY DEVICE 审中-公开
    闪存存储器内部编程期间的同步外部读操作

    公开(公告)号:WO2006007264A3

    公开(公告)日:2007-05-31

    申请号:PCT/US2005019268

    申请日:2005-06-01

    Applicant: ATMEL CORP

    Abstract: A system (300) and method for performing a simultaneous external read operation during internal programming of a memory device (301) is described. The memory device is configured to store data randomly and includes a source location (305), a destination location (303), a data register (307), and a cache register (309). The data register (307) is configured to simultaneously write data to the destination (303) and to the cache register (309). The system (300) further includes a processing device (107) (e.g., a microprocessor or microcontroller) for verifying an accuracy of any data received through electrical communication with the memory device. The processing device (107) is additionally configured to provide for error correction if the received data are inaccurate, add random data to the data, if required, and then transfer the error-corrected and/or random data modified data back to the destination location (303).

    Abstract translation: 描述了一种用于在存储器件(301)的内部编程期间执行同时外部读取操作的系统(300)和方法。 存储器装置被配置为随机存储数据,并且包括源位置(305),目的地位置(303),数据寄存器(307)和高速缓存寄存器(309)。 数据寄存器(307)被配置为同时将数据写入目的地(303)和高速缓存寄存器(309)。 系统(300)还包括处理装置(107)(例如,微处理器或微控制器),用于验证通过与存储装置的电气通信接收的任何数据的准确性。 处理装置(107)另外配置成如果接收的数据不准确地提供错误校正,如果需要,则向随机数据添加随机数据,然后将经纠错和/或随机数据修改的数据传送回目的位置 (303)。

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