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    REACTIVE-REACTOR FOR GENERATION OF GASEOUS INTERMEDIATES
    1.
    发明申请
    REACTIVE-REACTOR FOR GENERATION OF GASEOUS INTERMEDIATES 审中-公开
    气体中间产生反应器

    公开(公告)号：WO2004024973A2

    公开(公告)日：2004-03-25

    申请号：PCT/US2003/028402

    申请日：2003-09-10

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： LEE, Chung, J. ,  KUMAR, Atul ,  NGUYEN, Oanh ,  WU, Jeff ,  CHEN, Chieh

    IPC: C23C

    CPC classification number: B05D1/60

    Abstract: A semiconductor equipment that is useful for the fabrication of integrated circuits ("IC"). More specifically, this invention relates to a "reactive-reactor" for a transport polymerization ("TP") process module, wherein the process module is useful for the deposition of low dielectric ("ε") thin films in IC manufacture. The reactive-reactor has reactive metal interior surfaces for effective conversion of precursors to intermediates. The resultant reaction products of the precursor and the interior surface material of the reactive-reactor are very stable, and do not cause metallic contamination of the semiconductors. The reactive-reactor of this invention is also equipped with Reactor Re-generating capacity to restore the reactive metal interior surfaces.

    Abstract translation: 一种用于制造集成电路（“IC”）的半导体设备。 更具体地，本发明涉及用于运输聚合（“TP”）工艺模块的“反应性反应器”，其中该工艺模块可用于在IC制造中沉积低电介质（“ε”）薄膜。 反应器具有反应性金属内表面，用于有效地将前体转化为中间体。 反应堆反应器的前体和内表面材料的反应产物非常稳定，不会引起半导体的金属污染。 本发明的反应性反应器还配备有反应器再生能力以还原反应性金属内表面。

    CHEMICALLY AND ELECTRICALLY STABILIZED POLYMER FILMS BACKGROUND
    2.
    发明申请
    CHEMICALLY AND ELECTRICALLY STABILIZED POLYMER FILMS BACKGROUND 审中-公开
    化学和电动稳定聚合物膜背景技术

    公开(公告)号：WO2003085037A1

    公开(公告)日：2003-10-16

    申请号：PCT/US2003/010023

    申请日：2003-04-02

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： LEE, Chung, J. ,  KUMAR, Atul

    IPC: C08J5/00

    CPC classification number: B05D1/60 ,  B05D3/0254 ,  B29C71/02 ,  B29C2071/022 ,  B29C2071/025 ,  B29C2071/027 ,  C08G61/02 ,  C08G61/025 ,  C08G2261/3424 ,  C08J5/18 ,  H01L21/0212 ,  H01L21/02271 ,  H01L21/31058 ,  H01L21/3127 ,  Y10T428/269 ,  Y10T428/3154 ,  Y10T428/31544 ,  Y10T428/31855

    Abstract: Preparation methods and stabilization processes for low K polymers that consist of sp 2 C-X and HC-sp 2 C α -X bonds. A preparation method is achieved by controlling the substrate temperature and feed rate of the polymer precursors. One stabilization process includes a post annealing of as-deposited polymer films under the presence of hydrogen under high temperatures. The reductive annealing of these films is conducted at temperatures from -20°C to -50°C to +20°C to +50°C of their Reversible Crystal Transformation (“CRT”) temperatures, then quenching the resulting films to -20°C to -50°C below their “CRT” temperatures. The reductive annealing is conducted before the as-deposited film was removed from a deposition system and still under the vacuum. “Restabilization” processes of polymer surfaces that are exposed to reactive plasma etching are also disclosed; thus, further coating by barrier metal, cap layer or etch-stop layer can be safely applied.

    Abstract translation: 由S 2 C-X和HC-sp 2 C＆agr -X键组成的低K聚合物的制备方法和稳定方法。 通过控制聚合物前体的基板温度和进料速率来实现制备方法。 一种稳定化方法包括在氢气存在下在高温下沉积的聚合物膜的后退火。 这些膜的还原退火在其可逆晶体转变（“CRT”）温度的-20℃至-50℃至+ 20℃至+ 50℃的温度下进行，然后将所得膜骤冷至-20℃ °C至-50°C低于其“CRT”温度。 还原退火在沉积膜从沉积系统中移除之前仍然在真空下进行。 还公开了暴露于反应性等离子体蚀刻的聚合物表面的“再稳定”过程; 因此，可以安全地施加通过阻挡金属，盖层或蚀刻停止层的进一步涂覆。

    STABILIZED POLYMER FILM AND ITS MANUFACTURE
    4.
    发明申请
    STABILIZED POLYMER FILM AND ITS MANUFACTURE 审中-公开
    稳定的聚合物薄膜及其制造

    公开(公告)号：WO2003014182A1

    公开(公告)日：2003-02-20

    申请号：PCT/US2002/024769

    申请日：2002-08-06

    Applicant: DIELECTRIC SYSTEMS, INC.

    Inventor： LEE, Chung, J.

    IPC: C08G61/02

    CPC classification number: C08G61/025 ,  C08G2261/3424

    Abstract: Poly (para-xylylene) ("PPX") polymer films are processed under particular conditions in order to maintain their stability for use in integrated circuits. This is primarily achieved by controlling the substrate temperature, feed rate of the polymer precursors, and the environmental conditions. The resulting films are stable at high temperatures and compatible with other film layers.

    Abstract translation: 在特定条件下处理聚（对 - 二甲苯）（“PPX”）聚合物膜以维持其用于集成电路中的稳定性。 这主要通过控制基材温度，聚合物前体的进料速率和环境条件来实现。 所得薄膜在高温下稳定并与其他薄膜层相容。

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