QUANTUM DOT LIGHT EMITTING DEVICES
    5.
    发明申请
    QUANTUM DOT LIGHT EMITTING DEVICES 审中-公开
    量子点发光器件

    公开(公告)号:WO2018084899A1

    公开(公告)日:2018-05-11

    申请号:PCT/US2017/039188

    申请日:2017-06-26

    Abstract: The present invention provides a quantum dot light emitting diode comprising i) an emitting layer of at least one semiconductor nanoparticle made from semiconductor materials selected from the group consisting of Group II-VI compounds, Group II-V compounds, Group III-VI compounds, Group III-V compounds, Group IV-VI compounds, Group I-III-VI compounds, Group II-IV-VI compounds, Group II-IV-V compounds, or any combination thereof; and ii) a polymer for hole injection or hole transport layer, comprising one or more triaryl aminium radical cations having the structure (S1).

    Abstract translation: 本发明提供了一种量子点发光二极管,该量子点发光二极管包括i)由选自II-VI族化合物,II-V族半导体材料的半导体材料制成的至少一个半导体纳米颗粒的发光层 化合物,III-VI族化合物,III-V族化合物,IV-VI族化合物,I-III-VI族化合物,II-IV-VI族化合物,II-IV-V族化合物或其任意组合。 和ii)用于空穴注入或空穴传输层的聚合物,其包含一种或多种具有结构(S1)的三芳基铵自由基阳离子。

Patent Agency Ranking