公开(公告)号：WO2014123806A3

公开(公告)日：2014-11-06

申请号：PCT/US2014014419

申请日：2014-02-03

Applicant: FIRST SOLAR INC

Inventor： TRIVEDI JIGISH ,  POWELL RICK ,  DAMJANOVIC DAN ,  GUO JING ,  ZHAO ZHIBO ,  LIAO FENG ,  KARPENKO OLEH ,  JAYARAMAN SREENIVAS ,  LIM CHONG

IPC: H01L31/073 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/065 ,  H01L31/02167 ,  H01L31/03925 ,  H01L31/073 ,  H01L31/1828 ,  H01L31/1864 ,  H01L31/1872 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device (100) including a protective layer (114) between a window layer (112) and an absorber layer (116), the protective layer inhibiting dissolving/intermixing of the window layer into the absorber layer during a device activation step, and methods of forming such photovoltaic devices.

Abstract translation: 一种光伏器件（100），包括在窗口层（112）和吸收层（116）之间的保护层（114），所述保护层在器件激活步骤期间抑制了窗口层在吸收层中的溶解/混合，以及 形成这种光伏器件的方法。

公开(公告)号：WO2014121187A3

公开(公告)日：2014-10-16

申请号：PCT/US2014014414

申请日：2014-02-03

Applicant: FIRST SOLAR INC

Inventor： DAMJANOVIC DAN ,  LIAO FENG ,  POWELL RICK ,  SHAO RUI ,  TRIVEDI JIGISH ,  ZHAO ZHIBO

IPC: H01L31/0256 ,  H01L31/0272 ,  H01L31/028

CPC classification number: H01L31/02966 ,  H01L31/073 ,  H01L31/1832 ,  H01L31/1864 ,  Y02E10/543 ,  Y02P70/521

Abstract: A photovoltaic device includes a substrate structure and a p-type semiconductor absorber layer, the substrate structure including a CdSSe layer. A photovoltaic device may alternatively include a CdSeTe layer. A process for manufacturing a photovoltaic device includes forming a CdSSe layer over a substrate by at least one of sputtering, evaporation deposition, CVD, chemical bath deposition process, and vapor transport deposition process. The process includes forming a p- type absorber layer above the CdSSe layer.

Abstract translation: 光电器件包括衬底结构和p型半导体吸收层，该衬底结构包括CdSSe层。 光电器件可以替代地包括CdSeTe层。 制造光伏器件的方法包括通过溅射，蒸发沉积，CVD，化学浴沉积工艺和蒸气迁移沉积工艺中的至少一种在衬底上形成CdSSe层。 该方法包括在CdSSe层上形成p型吸收层。