Abstract:
A positive working photosensitive composition suitable for use as a photoresist, which comprises an admixture of at least one water insoluble, aqueous alkali soluble, film forming novolak resin; at least one o-diazonaphthoquinone photosensitizer; and a photoresist solvent mixture comprising a propylene glycol alkyl ether acetate and 3-methyl-3-methoxy butanol and process for producing such a composition.
Abstract:
The present invention provides methods for producing water insoluble, aqueous alkali soluble, film forming novolak resins having an extremely low level of metal ions, utilizing treated anion and cation exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resin and for producing semiconductor devices using such photoresist compositions.
Abstract:
A water insoluble, aqueous alkali soluble novolak resin, process for producing such a novolak resin, a photoresist containing such a novolak resin, and a method for producing a semiconductor device, wherein the resin is isolated by sub-surface forced steam distillation.
Abstract:
The present invention provides methods for producing TPPA having low level of metal ions, utilizing treated ion exchange resins. A method is also provided for producing photoresist composition having a very low level of metal ions from such TPPA for producing semiconductor devices using such photoresist compositions.
Abstract:
A process for producing a water insoluble, aqueous alkali soluble, film forming novolak resin fraction having a low metal ion content, made by the fractionation of a phenol formaldehyde condensation product, a process for producing a photoresist composition containing such a novolak resin, and a method for producing a semiconductor device using such a photoresist composition.
Abstract:
A photosensitizer comprising a diazo ester of structure (I) wherein: X = Cl, Br, I, OH, OR, COOR, COOAr(OH)n, COAr(OH)n, COR, R, Ar(OH)n; R = C1-C8 alkyl, n = 0 to 5, Ar = phenyl, as the backbone, where at least one of the hydroxy groups on phenyl ring has been esterified with diazo-sulfonyl chloride comprising 60 to 100 mole % 2,1,4 or 2,1,5-diazo sulfonyl chloride, or a mixture thereof, and a photoresist comprising an admixture of the photosensitizer, which is present in the photoresist composition in an amount sufficient to uniformly photosensitize the photoresist composition; a water insoluble, aqueous alkali soluble novolak resin, the novolak resin being present in the photoresist composition in an amount sufficient to form a substantially uniform photoresist composition and a suitable solvent.
Abstract translation:包含结构式(I)的重氮酯的光敏剂,其中:X = Cl,Br,I,OH,OR,COOR,COOAr(OH)n,COAr(OH)n,COR,R,Ar(OH) R = C 1 -C 8烷基,n = 0至5,Ar =苯基,作为主链,其中苯环上的至少一个羟基已经被重氮磺酰氯酯化,所述重氮磺酰氯包含60至100摩尔% 4或2,1,5-重氮磺酰氯或其混合物,以及光致抗蚀剂,其包含光致抗蚀剂组合物中以足以使光致抗蚀剂组合物均匀光敏的量的光敏剂的混合物; 水不溶性的碱溶性酚醛清漆树脂,酚醛清漆树脂以足以形成基本均匀的光致抗蚀剂组合物和合适溶剂的量存在于光致抗蚀剂组合物中。
Abstract:
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having a precise and consistent molecular weight, by adjusting the concentration of Lewis base. A method is also provided for producing photoresist composition from such novolak resins and for producing semiconductor devices using such photoresist compositions.
Abstract:
The present invention provides methods for producing water insoluble, aqueous alkali soluble novolak resins having consistent molecular weight and a very low level of metal ions, utilizing a solid acid condensation catalyst. A method is also provided for producing photoresist composition having a very low level of metal ions from such novolak resins and for producing semiconductor devices using such photoresist compositions.
Abstract:
The present invention provides methods for producing a photoresist having a very low level of metal ions, utilizing a treated chelating ion exchange resin to make the neutral ammonium salt or acid form. A method is also provided for producing semiconductor devices using such photoresist compositions.