Abstract:
According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.
Abstract:
Arrays of integrated optical devices and their methods for production are provided. The devices include an integrated bandpass filter layer that comprises at least two multi-cavity filter elements with different central bandpass wavelengths. The device arrays are useful in the analysis of highly multiplexed optical reactions in large numbers at high densities, including biochemical reactions, such as nucleic acid sequencing reactions. The devices provide for the efficient and reliable coupling of optical excitation energy from an optical source to the optical reactions. Optical signals emitted from the reactions can thus be measured with high sensitivity and discrimination. The device arrays are well suited for miniaturization and high throughput.
Abstract:
In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.
Abstract:
The invention provides an integrated semiconductor device (100) for detecting fluorescent tags, comprising a first layer (101) comprising a detector element (107), a second layer (102) located on top of the first layer (101) and comprising a rejection filter, a third layer (103) located on top of the second layer (102) and being fabricated from a dielectric material, a fourth layer (104) located on top of the third layer (103) and comprising an optical waveguide, and furthermore a fifth layer located on top of the fourth layer comprising a microfluidic channel (106). The optical waveguide is configured and positioned such that the micro-fluidic channel (106) is illuminated with an evanescent tail of excitation light guided by the optical waveguide. The rejection filter is positioned such that fluorescence from activated fluorescent tags present on top of the fourth layer (104) is filtered before falling onto the detector element (107). The rejection filter is configured to reject the wavelength range of the excitation light and configured to transmit the wavelength range of fluorescence from the activated fluorescent tags towards the detector element (107).