A METHOD FOR MANUFACTURING A FLUID SENSOR DEVICE AND A FLUID SENSOR DEVICE

    公开(公告)号:WO2019121931A1

    公开(公告)日:2019-06-27

    申请号:PCT/EP2018/085864

    申请日:2018-12-19

    Applicant: IMEC VZW

    CPC classification number: G01N27/4145 G01N27/4146 H01L21/76251

    Abstract: According to an aspect of the present inventive concept there is provided a method for manufacturing a fluid sensor device comprising: bonding a silicon-on-insulator arrangement comprising a silicon wafer, a buried oxide, a silicon layer, and a first dielectric layer, to a CMOS arrangement comprising a metallization layer and a planarized dielectric layer, wherein the bonding is performed via the first dielectric layer and the planarized dielectric layer; forming a fin-FET arrangement in the silicon layer, wherein the fin-FET arrangement is configured to function as a fluid sensitive fin-FET arrangement; removing the buried oxide and the silicon wafer; forming a contact to the metallization layer and the fin-FET arrangement, wherein the contact comprises an interconnecting structure configured to interconnect the metallization layer and the fin-FET arrangement; forming a channel comprising an inlet and an outlet, wherein the channel is configured to allow a fluid comprising an analyte to contact the fin-FET arrangement.

    NANOPORE FET SENSOR WITH NON-LINEAR POTENTIAL PROFILE

    公开(公告)号:WO2019120642A1

    公开(公告)日:2019-06-27

    申请号:PCT/EP2018/070007

    申请日:2018-07-24

    Applicant: IMEC VZW

    Abstract: In a first aspect, the present invention relates to a nanopore field-effect transistor sensor (100), comprising: i) a source region (310) and a drain region (320), defining a source-drain axis; ii) a channel region (330) between the source region (310) and the drain region (320); iii) a nanopore (400), defined as an opening in the channel region (330) which completely crosses through the channel region (330), oriented at an angle to the source-drain axis, having a first orifice (410) and a second orifice (420), and being adapted for creating a non-linear potential profile between the first (410) and second (420) orifice.

    SEMICONDUCTOR DEVICE FOR DETECTING FLUORESCENT PARTICLES
    4.
    发明申请
    SEMICONDUCTOR DEVICE FOR DETECTING FLUORESCENT PARTICLES 审中-公开
    用于检测荧光颗粒的半导体器件

    公开(公告)号:WO2015177373A1

    公开(公告)日:2015-11-26

    申请号:PCT/EP2015/061479

    申请日:2015-05-22

    Applicant: IMEC VZW

    Abstract: The invention provides an integrated semiconductor device (100) for detecting fluorescent tags, comprising a first layer (101) comprising a detector element (107), a second layer (102) located on top of the first layer (101) and comprising a rejection filter, a third layer (103) located on top of the second layer (102) and being fabricated from a dielectric material, a fourth layer (104) located on top of the third layer (103) and comprising an optical waveguide, and furthermore a fifth layer located on top of the fourth layer comprising a microfluidic channel (106). The optical waveguide is configured and positioned such that the micro-fluidic channel (106) is illuminated with an evanescent tail of excitation light guided by the optical waveguide. The rejection filter is positioned such that fluorescence from activated fluorescent tags present on top of the fourth layer (104) is filtered before falling onto the detector element (107). The rejection filter is configured to reject the wavelength range of the excitation light and configured to transmit the wavelength range of fluorescence from the activated fluorescent tags towards the detector element (107).

    Abstract translation: 本发明提供了一种用于检测荧光标签的集成半导体器件(100),包括:第一层(101),包括检测器元件(107),位于第一层(101)顶部的第二层(102) 过滤器,位于第二层(102)的顶部并由电介质材料制成的第三层(103),位于第三层(103)的顶部上并包括光波导的第四层(104),此外 位于第四层顶部的第五层包括微流体通道(106)。 光波导被配置和定位成使得微流体通道(106)被由光波导引导的激发光的渐逝尾部照亮。 排斥滤光器被定位成使得存在于第四层(104)的顶部上的来自活化荧光标签的荧光在落到检测器元件(107)之前被过滤。 拒绝滤波器被配置为拒绝激发光的波长范围并且被配置为将荧光的波长范围从激活的荧光标签朝向检测器元件(107)传输。

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