公开(公告)号：WO2021144681A1

公开(公告)日：2021-07-22

申请号：PCT/IB2021/050172

申请日：2021-01-11

Applicant: KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY

Inventor： ALFARAJ, Nasir ,  LI, Kuang-Hui ,  BRAIC, Laurentiu ,  KISS, Adrian Emil ,  ZOITA, Nicolae Catalin

IPC: H01L21/20 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02499 ,  H01L21/02565 ,  H01L21/02631

Abstract: A method for growing a semiconductor material over a Si-based substrate includes providing (200) the Si-based substrate (310); growing (208) a monocrystalline refractory-metal ceramic film (320) directly over the Si-based substrate (310); and depositing (210) a semiconductor film (330) directly over the monocrystalline refractory-metal ceramic film (320). The monocrystalline refractory-metal ceramic film (320) has a thickness less than 300 nm.