公开(公告)号：WO0203763B1

公开(公告)日：2003-03-13

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO0203763A8

公开(公告)日：2002-04-04

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065 ,  H05H1/00

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 200mm和300mm晶片在相同或具有相同几何形状的真空等离子体处理室中进行处理。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过在腔室的顶部处的电介质窗口向等离子体提供电磁场，从而激发腔室中的可电离气体到等离子体。 两个线圈包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈包括四圈，r.f. 激励被施加到最接近线圈中心点的转弯。 距离中心点第三远的转弯在用于200 mm晶圆的线圈中是不对称的。 在线圈中心点最近的两个转弯在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO0203763A3

公开(公告)日：2002-12-27

申请号：PCT/US0120263

申请日：2001-06-26

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y

IPC: H05H1/46 ,  B01J3/00 ,  B01J19/08 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/321

Abstract: 200 mm and 300 mm wafers are processed in vacuum plasma processing chambers that are the same or have the same geometry. Substantially planar excitation coils having different geometries for the wafers of different sizes excite ionizable gas in the chamber to a plasma by supplying electromagnetic fields to the plasma through a dielectric window at the top of the chamber. Both coils include plural symmetrical, substantially circular turns coaxial with a center point of the coil and at least one turn that is asymmetrical with respect to the coil center point. Both coils include four turns, with r.f. excitation being applied to the turn that is closest to the coil center point. The turn that is third farthest from the center point is asymmetric in the coil used for 200 mm wafers. The two turns closest to the coil center point are asymmetric in the coil used for 300 mm wafers.

Abstract translation: 在相同或几何形状相同的真空等离子体处理室中处理200mm和300mm晶片。 对于不同尺寸的晶片，具有不同几何形状的基本上平面的激励线圈通过经由腔室顶部的电介质窗口向等离子体供应电磁场而将腔室中的可电离气体激发成等离子体。 两个线圈都包括与线圈的中心点同轴的多个对称的基本圆形的匝和至少一个相对于线圈中心点不对称的匝。 两个线圈都包括四匝，r.f. 励磁被施加到最靠近线圈中心点的转弯处。 离中心点第三远的转弯在用于200毫米晶圆的线圈中是不对称的。 最接近线圈中心点的两匝在用于300毫米晶圆的线圈中是不对称的。

公开(公告)号：WO0147009A3

公开(公告)日：2002-01-31

申请号：PCT/US0034655

申请日：2000-12-19

Applicant: LAM RES CORP ,  NI TUQIANG ,  COLLISON WENLI

Inventor： NI TUQIANG ,  COLLISON WENLI

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/027 ,  H01L21/66

CPC classification number: H01J37/32935 ,  H01J37/32963 ,  H01J2237/3342

Abstract: A method and apparatus for detecting the endpoint of a photoresist stripping process. A wafer to be stripped of photoresist is disposed inside a stripping chamber. After substantially all the photoresist is stripped from the wafer, the rate of a reaction of O and NO to form NO2 increases, which increases the intensity of emitted light. A light detecting apparatus detects this increase in light intensity, which signals the endpoint of the photoresist stripping process.

Abstract translation: 一种用于检测光致抗蚀剂剥离工艺的端点的方法和装置。 待剥离光致抗蚀剂的晶片设置在剥离室内。 在从晶片剥离基本上所有的光致抗蚀剂之后，O和NO反应形成NO 2的速率增加，这增加了发射光的强度。 光检测装置检测光强度的增加，其表示光致抗蚀剂剥离工艺的端点。

公开(公告)号：WO2006071816A3

公开(公告)日：2007-02-22

申请号：PCT/US2005046930

申请日：2005-12-22

Applicant: LAM RES CORP ,  HOWALD ARTHUR M ,  NI TUQIANG

Inventor： HOWALD ARTHUR M ,  NI TUQIANG

IPC: C23F1/00 ,  C23C16/505 ,  H01L21/3065

CPC classification number: H01J37/321 ,  C23F4/00 ,  H01J37/32477

Abstract: An inductively coupled plasma processing apparatus includes a chamber (100) having a top opening. A window (16) seals the top opening of the chamber, and the window has an inner surface that is exposed to an internal region of the chamber. A window protector (20) for protecting the inner surface of the window is disposed within the chamber. The window protector (20) is configured to prevent conductive etch byproducts from being deposited on the inner surface of the window in the form of a continuous loop. In one alternative embodiment, a plurality of window protectors (20') is affixed to the inner surface of the window. In another embodiment, the window has a plurality of T-shaped or dovetail slots formed therein. In yet another embodiment, a plurality of rectangular slots is formed in the window and a window protector having corresponding slots is mounted against the inner surface of the window.

Abstract translation: 电感耦合等离子体处理装置包括具有顶部开口的室（100）。 窗口（16）密封室的顶部开口，并且窗口具有暴露于室的内部区域的内表面。 用于保护窗的内表面的窗保护器（20）设置在室内。 窗保护器（20）被配置为防止导电蚀刻副产物以连续环形式沉积在窗的内表面上。 在一个替代实施例中，多个窗保护器（20'）固定到窗的内表面。 在另一个实施例中，窗口具有形成在其中的多个T形或燕尾槽。 在另一个实施例中，在窗口中形成多个矩形槽，并且具有相应槽的窗保护器安装在窗的内表面上。

公开(公告)号：WO02080214A3

公开(公告)日：2003-04-24

申请号：PCT/US0209562

申请日：2002-03-29

Applicant: LAM RES CORP ,  NI TUQIANG ,  LIN FRANK ,  HUANG CHUNG-HO ,  JIANG WEINAN

Inventor： NI TUQIANG ,  LIN FRANK ,  HUANG CHUNG-HO ,  JIANG WEINAN

IPC: H01J37/32 ,  H01L21/762

CPC classification number: H01J37/32174 ,  H01J37/32082 ,  H01J37/3299

Abstract: The amount of RF power supplied to a plasma in a vacuum plasma processing chamber is gradually changed on a preprogrammed basis in response to signals stored in a computer memory. The computer memory stores signals so that other processing chamber parameters (pressure, gas species and gas flow rates) remain constant while the gradual change occurs. The stored signals enable rounded corners, instead of sharp edges, to be etched, e.g., at an intersection of a trench wall and base.

Abstract translation: 响应于存储在计算机存储器中的信号，提供给真空等离子体处理室中的等离子体的RF功率的量在预编程的基础上逐渐改变。 计算机存储器存储信号，使得其他处理室参数（压力，气体种类和气体流速）在发生逐渐变化时保持恒定。 存储的信号使得能够蚀刻圆形拐角而不是锋利的边缘，例如在沟槽壁和基部的交叉处。

公开(公告)号：WO0203429A3

公开(公告)日：2002-10-17

申请号：PCT/US0120800

申请日：2001-06-29

Applicant: LAM RES CORP

Inventor： NGO TUAN ,  KAVEH FARRO ,  LAM CONNIE ,  HUANG CHUNG-HO ,  NI TUQIANG ,  LE ANTHONY T ,  SALKOW STEVEN

IPC: H01L21/3065 ,  G05B19/042 ,  H01J37/32 ,  H01L21/02 ,  G05B19/414 ,  H01L21/00

CPC classification number: H01J37/32431 ,  G05B19/0421 ,  G05B2219/2208 ,  G05B2219/25434 ,  G05B2219/45031 ,  H01J37/32 ,  H01J37/32935

Abstract: A central controller for use in a semiconductor manufacturing equipment integrates a plurality of controllers with an open architecture allowing real-time communication between the various control loops. The central controller includes at least one central processing unit (cpu) executing high level input output (i/o) and control algorithms and at least one integrated i/o controller providing integrated interface to sensors and control hardware. The integrated i/o controller performs basic i/o and low level control functions and communicates with the CPU through a bus to perform or enable controls of various subsystems of the semiconductor manufacturing equipment. A method for controlling a plurality of sensors and a plurality of control hardware for use in a semiconductor manufacturing equipment loads an application software onto a cpu board that is plugged in a bus. Sensors and control hardware are linked to electrical controllers that are mounted onto a single circuit board which occupies an address block in a memory space of the bus. The single circuit board is then plugged in the bus and the sensors and control hardware are controlled via the application software.

Abstract translation: 在半导体制造设备中使用的中央控制器将多个控制器集成在一起，该开放式架构允许各种控制回路之间的实时通信。 中央控制器包括至少一个执行高级输入输出（I / O）和控制算法的中央处理单元（cpu）以及至少一个提供与传感器和控制硬件的集成接口的集成I / O控制器。 集成的I / O控制器执行基本的I / O和低级控制功能，并通过总线与CPU通信，以执行或启用半导体制造设备各个子系统的控制。 用于控制在半导体制造设备中使用的多个传感器和多个控制硬件的方法将应用软件加载到插入总线的cpu板上。 传感器和控制硬件与电气控制器连接，电气控制器安装在单个电路板上，占用总线存储空间中的地址块。 然后将单电路板插入总线，并通过应用软件控制传感器和控制硬件。

公开(公告)号：WO02080234A2

公开(公告)日：2002-10-10

申请号：PCT/US0206650

申请日：2002-03-21

Applicant: LAM RES CORP ,  NI TUQIANG ,  JIANG WEINAN ,  CHIANG CONAN ,  LIN FRANK Y ,  LEE CHRIS ,  LEE DAI N

Inventor： NI TUQIANG ,  JIANG WEINAN ,  CHIANG CONAN ,  LIN FRANK Y ,  LEE CHRIS ,  LEE DAI N

IPC: H01L21/28 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/768

CPC classification number: B81C1/00595 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/67069 ,  H01L21/76807 ,  H01L21/7681 ,  H01L21/76838

Abstract: A semiconductor manufacturing process wherein an organic antireflective coating is etched with an O2-free sulfur containing gas which provides selectivity with respect to an underlying layer and/or minimizes the lateral etch rate of an overlying photoresist to maintain critical dimensions defined by the photoresist. The etchant gas can include SO2 and a carrier gas such as Ar or He and optional additions of other gases such as HBr. The process is useful for etching 0.25 micron and smaller contact or via openings in forming structures such as damascene structures.

Abstract translation: 半导体制造方法，其中用无氧的含硫气体蚀刻有机抗反射涂层，其提供相对于下层的选择性和/或最小化上覆光致抗蚀剂的横向蚀刻速率以维持由光致抗蚀剂限定的临界尺寸。 蚀刻剂气体可以包括SO 2和诸如Ar或He的载气和任选的其它气体例如HBr的添加物。 该方法对于在形成结构如镶嵌结构中蚀刻0.25微米和较小的接触或通孔开口是有用的。

公开(公告)号：WO0123636A9

公开(公告)日：2002-08-15

申请号：PCT/US0041001

申请日：2000-09-26

Applicant: LAM RES CORP

Inventor： KENNARD MARK A ,  NI TUQIANG

IPC: C23C14/56 ,  C23C16/44 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065

CPC classification number: C23C14/564 ,  C23C16/4404

Abstract: A system for processing a substrate using a process gas is disclosed. The system forming volatile and non-volatile species during processing. The system includes a process chamber within which the processing is performed. The process chamber being configured to enclose the substrate, and having a chamber surface proximate to the substrate. The system further includes a chamber surface protection arrangement configured for shielding the surface from the non-volatile species formed during processing. The chamber surface protection arrangement includes an adsorbing film that is disposed inside the process chamber and substantially adjacent to the chamber surface. The adsorbing film being configured to prevent the non-volatile species from contacting the chamber surface, and arranged to adsorb a substantial portion of the non-volatile species that contact the adsorbing film. The adsorbing film further being arranged for removing the adsorbed non-volatile species from the process chamber.

Abstract translation: 公开了一种使用处理气体处理衬底的系统。 该系统在加工过程中形成挥发性和非挥发性物质。 该系统包括处理室，在该处理室内执行处理。 处理室被配置为封闭基板，并且具有靠近基板的室表面。 该系统还包括腔表面保护装置，其被配置为将表面与处理期间形成的非挥发性物质进行屏蔽。 腔室表面保护装置包括设置在处理室内部并基本上邻近腔室表面的吸附膜。 吸附膜被配置为防止非挥发性物质接触室表面，并且被布置成吸附大部分与吸附膜接触的非挥发性物质。 吸附膜进一步被布置用于从处理室去除吸附的非挥发性物质。

公开(公告)号：WO0175958A3

公开(公告)日：2002-01-03

申请号：PCT/US0108618

申请日：2001-03-16

Applicant: LAM RES CORP ,  NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

Inventor： NI TUQIANG ,  TAKESHITA KENJI ,  CHOI TOM ,  LIN FRANK Y ,  COLLISON WENLI

IPC: H05H1/46 ,  H01L21/3065 ,  H01L21/3213 ,  H01J37/32

CPC classification number: H01J37/32642 ,  H01L21/32137

Abstract: An apparatus and method for consecutively processing a series of semiconductor substrates with minimal plasma etch rate variation following cleaning with fluorine- containing gas and/or seasoning of the plasma etch chamber. The method includes steps of (a) placing a semiconductor substrate on a substrate support in a plasma etching chamber, (b) maintaining a vacuum in the chamber, (c) etching an exposed surface of the substrate by supplying an etching gas to the chamber and energizing the etching gas to form a plasma in the chamber, (d) removing the substrate from the chamber; and (e) consecutively etching additional substrates in the chamber by repeating steps (a-d), the etching step being carried out by minimizing a recombination rate of H and Br on a silicon carbide edge ring surrounding the substrate at a rate sufficient to offset a rate at which Br is consumed across the substrate. The method can be carried out using pure HBr or combination of HBr with other gases.

Abstract translation: 一种用于在用含氟气体清洁和/或等离子体蚀刻室的调节之后以最小等离子体蚀刻速率变化连续处理一系列半导体衬底的装置和方法。 该方法包括以下步骤：（a）将半导体衬底放置在等离子体蚀刻室中的衬底支撑件上，（b）在室中保持真空，（c）通过向腔室中提供蚀刻气体来蚀刻衬底的暴露表面 并激励蚀刻气体以在腔室中形成等离子体，（d）从腔室中移除基底; 并且（e）通过重复步骤（ad）连续地蚀刻腔室中的附加衬底，蚀刻步骤通过使围绕衬底的碳化硅边缘环上的H和Br的复合速率以足以抵消速率 其中Br在基底上被消耗。 该方法可以使用纯HBr或HBr与其他气体的组合进行。