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公开(公告)号：WO2012165898A2
公开(公告)日：2012-12-06
申请号：PCT/KR2012/004343
申请日：2012-06-01
Applicant: LG INNOTEK CO., LTD. , SHIN, Dong Geun
Inventor： SHIN, Dong Geun
CPC classification number: C30B23/025 , C30B29/36
Abstract: Disclosed are an apparatus and a method for fabricating an ingot. The apparatus includes a crucible receiving source materials therein; a holder fixing a seed located above the source materials; and an adhesive layer interposed between the holder and the seed and chemically bonded to the seed.
Abstract translation: 公开了一种用于制造锭的装置和方法。 该装置包括：坩埚，其中容纳源材料; 固定位于源材料上方的种子的支架; 以及插入在保持器和种子之间并且化学键合到种子的粘合剂层。
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2.发明申请
公开(公告)号：WO2013100455A1
公开(公告)日：2013-07-04
申请号：PCT/KR2012/010958
申请日：2012-12-14
Applicant: LG INNOTEK CO., LTD.
Inventor： HAN, Jung Eun , SHIN, Dong Geun , KIM, Byung Sook
IPC: C04B35/565 , C04B35/622 , C04B35/64 , C01B31/36
CPC classification number: C01B32/956 , C01B32/40 , C04B35/571 , C04B35/575 , C04B35/62695 , C04B35/634 , C04B35/645 , C04B2235/48 , C04B2235/6582 , C04B2235/723 , C04B2235/77
Abstract: A method for manufacturing a silicon carbide powder according to the embodiment includes forming a mixture by mixing a silicon (Si) source containing silicon with a solid carbon (C) source or a C source containing an organic carbon compound; heating the mixture; cooling the mixture; and supplying hydrogen gas into the mixture.
Abstract translation: 根据实施例的制造碳化硅粉末的方法包括通过将含硅的硅（Si）源与固体碳（C）源或含有机碳化合物的C源混合形成混合物; 加热混合物; 冷却混合物; 并向混合物中供应氢气。
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公开(公告)号：WO2012177048A3
公开(公告)日：2012-12-27
申请号：PCT/KR2012/004875
申请日：2012-06-20
Applicant: LG INNOTEK CO., LTD. , SHIN, Dong Geun , SON, Chang Hyun
Inventor： SHIN, Dong Geun , SON, Chang Hyun
IPC: C30B23/00 , C30B29/36 , H01L21/205
Abstract: An apparatus for fabricating an ingot according to the embodiment comprises a crucible for receiving a raw material; and a filter part for selectively filtering a specific component in the crucible, wherein the filter part comprises a polymer.
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公开(公告)号：WO2013015642A3
公开(公告)日：2013-01-31
申请号：PCT/KR2012/005988
申请日：2012-07-26
Applicant: LG INNOTEK CO., LTD. , MIN, Kyoung Seok , SHIN, Dong Geun
Inventor： MIN, Kyoung Seok , SHIN, Dong Geun
Abstract: A method for growing an ingot according to the embodiment includes filling a first powder in a crucible; raising a temperature of the crucible; forming a second powder by grain-growing the first powder; and growing the ingot by sublimating the second powder.
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5.发明申请
公开(公告)号：WO2012169789A2
公开(公告)日：2012-12-13
申请号：PCT/KR2012/004481
申请日：2012-06-07
Applicant: LG INNOTEK CO., LTD. , SHIN, Dong Geun , SON, Chang Hyun
Inventor： SHIN, Dong Geun , SON, Chang Hyun
CPC classification number: C30B23/007 , C30B23/00 , C30B29/36
Abstract: An apparatus for fabricating an ingot includes a crucible for receiving a raw material, wherein the raw material has a shape extending in one direction.
Abstract translation: 用于制造锭的装置包括用于容纳原料的坩埚，其中原料具有在一个方向上延伸的形状。
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公开(公告)号：WO2012161524A3
公开(公告)日：2012-11-29
申请号：PCT/KR2012/004096
申请日：2012-05-24
Applicant: LG INNOTEK CO., LTD. , KIM, Bum Sup , SHIN, Dong Geun
Inventor： KIM, Bum Sup , SHIN, Dong Geun
IPC: C30B23/00 , C30B29/36 , B01D63/08 , H01L21/205
Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, and a filter part to allow a specific component in the crucible to selectively pass through the filter part. The raw material includes silicon and carbon.
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公开(公告)号：WO2013109105A1
公开(公告)日：2013-07-25
申请号：PCT/KR2013/000442
申请日：2013-01-18
Applicant: LG INNOTEK CO., LTD.
Inventor： KIM, Byung Sook , SHIN, Dong Geun , KIM, Bum Sup , HAN, Jung Eun
CPC classification number: C30B25/20 , C01B32/956 , C01P2004/30 , C01P2004/32 , C01P2004/61 , C30B29/36 , Y10T428/2982
Abstract: Disclosed are silicon carbide powders and a method of preparing the same. The method includes forming a mixture by mixing a silicon (Si) source, a carbon (C) source, and a silicon carbide (SiC) seed, and reacting the mixture. The silicon carbide (SiC) powders include silicon carbide (SiC) grains having a β-type crystal phase and a grain size in a range of about 5㎛ to about 100㎛.
Abstract translation: 公开了碳化硅粉末及其制备方法。 该方法包括通过混合硅（Si）源，碳（C）源和碳化硅（SiC）晶种形成混合物，并使该混合物反应。 碳化硅（SiC）粉末包括具有β型结晶相的碳化硅（SiC）晶粒，并且晶粒尺寸在约5至约100 a的范围内。
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公开(公告)号：WO2012177012A2
公开(公告)日：2012-12-27
申请号：PCT/KR2012/004663
申请日：2012-06-13
Applicant: LG INNOTEK CO., LTD. , SHIN, Dong Geun , SON, Chang Hyun
Inventor： SHIN, Dong Geun , SON, Chang Hyun
IPC: C30B23/00 , C30B29/36 , H01L21/205
CPC classification number: C30B23/005 , C30B23/00 , C30B29/36
Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus includes a crucible to receive a raw material, a holder disposed at an upper portion of the crucible to fix a seed, and a filter part in the crucible. The filter part is spaced apart from a surface of the raw material.
Abstract translation: 公开了一种用于制造锭的装置。 该装置包括容纳原料的坩埚，设置在坩埚的上部以将种子固定的保持器和坩埚中的过滤器部件。 过滤器部分与原料的表面间隔开。
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公开(公告)号：WO2012173438A2
公开(公告)日：2012-12-20
申请号：PCT/KR2012/004773
申请日：2012-06-15
Applicant: LG INNOTEK CO., LTD. , SON, Chang Hyun , SHIN, Dong Geun
Inventor： SON, Chang Hyun , SHIN, Dong Geun
IPC: C30B23/00 , C30B29/36 , H01L21/205
Abstract: An apparatus for fabricating an ingot comprises an inner crucible for receiving a raw material; a seed holder placed on the raw material; and an outer crucible surrounding the inner crucible and comprising an open area in which a part of the raw material is exposed.
Abstract translation: 用于制造锭的装置包括用于接收原料的内坩埚; 种子保持器放置在原料上; 以及围绕所述内坩埚的外坩埚，所述外坩埚包括暴露所述原料的一部分的开放区域。
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公开(公告)号：WO2012173409A2
公开(公告)日：2012-12-20
申请号：PCT/KR2012/004702
申请日：2012-06-14
Applicant: LG INNOTEK CO., LTD. , SON, Chang Hyun , SHIN, Dong Geun
Inventor： SON, Chang Hyun , SHIN, Dong Geun
IPC: C30B23/00 , C30B29/36 , H01L21/205
CPC classification number: C30B23/002 , C30B23/06 , C30B29/36
Abstract: Disclosed is an apparatus for fabricating an ingot. The apparatus comprises a crucible to receive a source material, and a temperature difference compensating part on the source material. The temperature difference compensating part comprises a plurality of holes.
Abstract translation: 公开了一种用于制造锭的装置。 该装置包括用于接收源材料的坩埚和源材料上的温度差补偿部件。 温差补偿部包括多个孔。
