公开(公告)号：WO2017116685A1

公开(公告)日：2017-07-06

申请号：PCT/US2016/066341

申请日：2016-12-13

Applicant: MATTSON TECHNOLOGY, INC.

Inventor： LIEBERER, Markus ,  PFAHLER, Christian ,  HAGEDORN, Markus ,  VANABBEMA, Michael ,  COSCEEV, Alexandr

IPC: H01L21/67 ,  H01L21/324 ,  H01L21/683 ,  H01L21/66

CPC classification number: H01L22/20 ,  H01L21/324 ,  H01L21/67115 ,  H01L21/6719 ,  H01L21/67248 ,  H01L21/68757

Abstract: Preheat processes for a millisecond anneal system are provided. In one example implementation, a preheat process can include receiving a substrate on a wafer support plate in a processing chamber of a millisecond anneal system; obtaining one or more temperature measurements of the wafer support plate using a temperature sensor; and applying a preheat recipe to heat the wafer support plate based at least in part on the temperature of the wafer support plate. In one example implementation, a preheat process can include obtaining one or more temperature measurements from a temperature sensor having a field of view of a wafer support plate in a millisecond anneal system; and applying a pulsed preheat recipe to heat the wafer support plate in the millisecond anneal system based at least in part on the one or more temperature measurements.

Abstract translation: 提供毫秒退火系统的预热过程。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统的处理室中的晶片支撑板上接收衬底; 使用温度传感器获得所述晶片支撑板的一个或多个温度测量结果; 以及至少部分基于晶片支撑板的温度应用预热配方来加热晶片支撑板。 在一个示例实施方式中，预热过程可以包括：在毫秒退火系统中从具有晶片支撑板的视场的温度传感器获得一个或多个温度测量结果; 以及至少部分地基于所述一个或多个温度测量，施加脉冲式预加热配方以在所述毫秒退火系统中加热所述晶片支撑板。