公开(公告)号：WO2021252779A1

公开(公告)日：2021-12-16

申请号：PCT/US2021/036836

申请日：2021-06-10

Applicant: MENLO MICROSYSYSTEMS, INC.

Inventor： JEON, Jaeseok ,  KEIMEL, Christopher, F. ,  NASSAR, Chris ,  MINNICK, Andrew

IPC: C03C17/36 ,  C03C17/09 ,  C03C17/22 ,  C03C17/34 ,  H01L21/48 ,  H01L23/15 ,  H01L23/498 ,  B81C1/00 ,  B81B2203/0353 ,  B81C1/00095 ,  B81C2201/0181 ,  C03C17/225 ,  C03C17/3411 ,  C03C17/3435 ,  C03C17/3602 ,  C03C17/3605 ,  C03C17/3615 ,  C03C17/3626 ,  C03C17/3639 ,  C03C17/3649 ,  C03C17/3655 ,  C03C17/3668 ,  C23C16/402 ,  C23C16/45525 ,  H01L21/486 ,  H01L23/291 ,  H01L23/49827

Abstract: A through-glass via (TGV) formed in a glass substrate may comprise a metal plating layer formed in the TGV. The TGV may have a three-dimensional (3D) topology through the glass substrate and the metal plating layer conformally covering the 3D topology. The TGV may further comprise a barrier layer disposed over the metal plating layer, and a metallization layer disposed over the barrier layer. The metallization layer may be electrically coupled to the metal plating layer through the barrier layer. The barrier layer may comprise a metal- nitride film disposed on the metal plating layer that is electrically coupled to the metallization layer. The barrier layer may comprise a metal film disposed over the metal plating layer and over a portion of glass surrounding the TGV, and an electrically-insulating film disposed upon the metal film, the electrically-insulating film completely overlapping the metal plating layer and partially overlapping the metal film.