LINEARITY ENHANCEMENT METHOD FOR LOW-POWER LOW-NOISE AMPLIFIERS BIASED IN THE SUBTHRESHOLD REGION
    1.
    发明申请
    LINEARITY ENHANCEMENT METHOD FOR LOW-POWER LOW-NOISE AMPLIFIERS BIASED IN THE SUBTHRESHOLD REGION 审中-公开
    低功率低噪声放大器的线性增强方法在亚临界区域

    公开(公告)号:WO2016133896A1

    公开(公告)日:2016-08-25

    申请号:PCT/US2016/018056

    申请日:2016-02-16

    Abstract: An amplifier and corresponding method include a field-effect transistor (FET) amplifier and a cascode FET. Each FET may operate with a positive ratio between its third-order nonlinearity coefficient and its linear gain. An inductor added at a gate of the cascode FET, operatively coupled with other components in a circuit, results in a first equivalent impedance looking into an input of the cascode FET. The first equivalent impedance may substantially offset a distortion output of the FET amplifier based upon the added inductor. The inductor operatively coupled with the circuit may result in a second equivalent impedance looking out of the gate of the cascode FET. The second equivalent impedance may substantially offset a distortion output of the cascode FET based upon the added inductor. In addition, a programmable capacitor connected between the gate and drain of the cascode FET may further substantially offset a distortion output of each FET.

    Abstract translation: 放大器和相应的方法包括场效应晶体管(FET)放大器和共源共栅FET。 每个FET可以以其三阶非线性系数和其线性增益之间的正比率进行操作。 在共源共栅FET的栅极处添加的电感器,与电路中的其他部件可操作地耦合,得到第一等效阻抗,以查看共源共栅FET的输入。 基于所添加的电感器,第一等效阻抗可以基本上抵消FET放大器的失真输出。 与电路可操作地耦合的电感器可以产生从共源共栅FET的栅极外面看的第二等效阻抗。 基于所添加的电感器,第二等效阻抗可以基本上抵消共源共栅FET的失真输出。 此外,连接在共源共栅FET的栅极和漏极之间的可编程电容器可以进一步基本上偏移每个FET的失真输出。

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