公开(公告)号：WO2021250499A1

公开(公告)日：2021-12-16

申请号：PCT/IB2021/054618

申请日：2021-05-27

Applicant: OKINAWA INSTITUTE OF SCIENCE AND TECHNOLOGY SCHOOL CORPORATION

Inventor： QI, Yabing ,  QIU, Longbin ,  HE, Sisi ,  ONO, Luis Katsuya

IPC: C23C16/30 ,  C23C16/448 ,  C23C16/46 ,  C23C16/48 ,  C23C16/56 ,  C30B25/02 ,  C30B29/12 ,  H01L33/00 ,  H01L51/00 ,  C23C16/0272 ,  C23C16/4481 ,  C23C16/463 ,  C23C16/482 ,  C30B25/10 ,  C30B25/165 ,  C30B25/18 ,  H01G9/0036 ,  H01G9/2009 ,  H01L51/0002 ,  H01L51/001 ,  H01L51/424 ,  H01L51/4253 ,  H01L51/56

Abstract: Systems and methods for performing a rapid hybrid chemical vapor deposition are described herein. In an embodiment, first type of precursor materials is deposited on a substrate. The substrate is placed in a receptacle of a heating device, the heating device configured to provide heat to at least a portion of the receptacle. A second type of precursor materials is placed in the receptacle of the heating device such that the organic compound is closer to a gas source of the heating device than the substrate. A gas flow is created through the receptacle of the heating device. The heating component is used to cause of a portion of the receptacle comprising the substrate and the second type of precursor materials. During the heating process, at least a portion of the second type of precursor materials is deposited on at least a portion of the first type of precursor materials.