Abstract:
A semiconductor die attach composition with greater than 60% metal volume after thermal reaction having: (a) 80-99 wt% of a mixture of metal particles comprising 30-70 wt% of a lead-free low melting point (LMP) particle composition comprising at least one LMP metal Y that melts below a temperature Tl, and 25-70 wt% of a high melting point (HMP) particle composition comprising at least one metallic element M that is reactive with the at least one LMP metal Y at a process temperature Tl, wherein the ratio of wt% of M to wt% of Y is at least 1.0; (b) 0-30 wt% of a metal powder additive A; and (c) a fluxing vehicle having a volatile portion, and not more than 50 wt% of a non-volatile portion.