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公开(公告)号：WO2017058335A1
公开(公告)日：2017-04-06
申请号：PCT/US2016/041954
申请日：2016-07-13
Applicant: GENERAL ELECTRIC COMPANY
Inventor： BREWER, Joleyn, Eileen , KEIMEL, Christopher, Fred , AIMI, Marco, Francesco , MINNICK, Andrew, James , RUFFALO, Renner, Stephen
IPC: B81B3/00
CPC classification number: B81B3/0027 , B81B3/0075 , B81B7/0003 , B81B7/008 , B81B2201/01 , B81B2201/014 , B81B2201/0228 , B81B2203/0118 , B81B2203/0127 , B81B2203/0315 , B81B2203/053 , B81B2207/015 , B81B2207/115 , B81C1/00134 , B81C1/0015 , B81C1/00158 , B81C1/00182 , B81C1/00373 , B81C2201/0107 , G01L9/0042 , G01L9/0044
Abstract: A system and method for a micro-electrical-mechanical system (MEMS) device including a substrate and a free-standing and suspended electroplated metal MEMS structure formed on the substrate. The free-standing and suspended electroplated metal MEMS structure includes a metal mechanical element mechanically coupled to the substrate and a seed layer mechanically coupled to and in electrical communication with the mechanical element, the seed layer comprising at least one of a refractory metal and a refractory metal alloy, wherein a thickness of the mechanical element is substantially greater than a thickness of the seed layer such that the mechanical and electrical properties of the free-standing and suspended electroplated metal MEMS structure are defined by the material properties of the mechanical element.
Abstract translation: 一种用于微电子机械系统（MEMS）装置的系统和方法，其包括形成在基板上的基板和独立悬挂的电镀金属MEMS结构。 独立悬挂的电镀金属MEMS结构包括机械耦合到基底的金属机械元件和机械耦合到机械元件并与之机电连接的种子层，种子层包括难熔金属和耐火材料中的至少一种 金属合金，其中机械元件的厚度基本上大于种子层的厚度，使得独立和悬浮的电镀金属MEMS结构的机械和电学性质由机械元件的材料特性限定。
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2.发明申请MONOLITHICALLY INTEGRATED MULTI-SENSOR DEVICE ON A SEMICONDUCTOR SUBSTRATE AND METHOD THEREFOR 审中-公开半导体基板上的单片集成多传感器器件及其方法
公开(公告)号：WO2016057007A1
公开(公告)日：2016-04-14
申请号：PCT/US2014/026562
申请日：2014-03-13
Applicant: GOGOI, Bishnu
Inventor： GOGOI, Bishnu
IPC: H01L27/14
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: An integrated circuit having an indirect sensor and a direct sensor formed on a common semiconductor substrate is disclosed. The direct sensor requires the parameter being measured to be directly applied to the direct sensor. Conversely, the indirect sensor can have the parameter being measured to be indirectly applied to the indirect sensor. The parameter being measured by the direct sensor is different than the parameter being measured by the indirect sensor. In other words, the direct sensor and indirect sensor are of different types. An example of a direct sensor is a pressure sensor. The pressure being measured by the pressure sensor must be applied to the pressure sensor. An example of an indirect sensor is an accelerometer. The rate of change of velocity does not have to be applied directly to the accelerometer. In one embodiment, the direct and indirect sensors are formed using photolithographic techniques.
Abstract translation: 公开了一种具有间接传感器和形成在公共半导体衬底上的直接传感器的集成电路。 直接传感器需要测量的参数直接应用于直接传感器。 相反，间接传感器可以将被测量的参数间接地应用于间接传感器。 由直接传感器测量的参数与由间接传感器测量的参数不同。 换句话说，直接传感器和间接传感器是不同的类型。 直接传感器的一个例子是压力传感器。 由压力传感器测量的压力必须应用于压力传感器。 间接传感器的一个例子是加速度计。 速度变化率不必直接应用于加速度计。 在一个实施例中，使用光刻技术形成直接和间接传感器。
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公开(公告)号：WO02051743A2
公开(公告)日：2002-07-04
申请号：PCT/US2001/050464
申请日：2001-12-20
CPC classification number: B81C1/0015 , B81B2201/0228 , B81C2201/019
Abstract: Methods for making thin silicon layers 20 suspended over recesses 30 in glass wafers or substrates 22 are disclosed. One embodiment of the present invention includes providing a thin silicon wafer 20, and a glass wafer or substrate 22. Recesses 30 are formed in one surface 24 of the glass wafer 22, and electrodes 38 are formed in the recesses 30. The silicon wafer 20 is then bonded to the glass wafer 22 over the recesses 30. The silicon wafer 20 is then etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer 120 has a patterned metal layer 129. The silicon wafer 120 is bonded to the glass wafer 22, with the patterned metal layer 129 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 is selectively etched down to the metal layer 129. The metalized layer 129 may serve to seal gasses within the recessed cavities 30 of the glass wafer 22 during the silicon etching process. The metal layer 129 can then be subsequently removed.
Abstract translation: 公开了制造悬浮在玻璃晶片或基板22中的凹槽30上的薄硅层20的方法。 本发明的一个实施例包括提供薄硅晶片20和玻璃晶片或基板22.凹部30形成在玻璃晶片22的一个表面24中，并且电极38形成在凹部30中。硅晶片20 然后在凹槽30上结合到玻璃晶片22.然后蚀刻硅晶片20以赋予所需的悬浮或硅晶片结构。 在本发明的另一个实施例中，硅晶片120具有图案化的金属层129.硅晶片120结合到玻璃晶片22上，图案化的金属层129邻近玻璃晶片22中的凹槽30定位。硅 晶片120定位成邻近玻璃晶片22中的凹部30.硅晶片120被选择性地向下蚀刻到金属层129.金属化层129可用于在硅蚀刻期间将气体密封在玻璃晶片22的凹腔30内。 处理。 然后可以随后去除金属层129。
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公开(公告)号：WO2019139662A1
公开(公告)日：2019-07-18
申请号：PCT/US2018/057236
申请日：2018-10-24
Applicant: INVENSENSE, INC.
Inventor： THOMPSON, Matthew
IPC: G01C19/5712 , G01C19/5719 , G01C19/5733 , G01C19/574 , G01P15/125
CPC classification number: G01C19/56 , B81B3/0018 , B81B2201/0228 , G01C19/5712 , G01C19/5719 , G01C19/5733 , G01C19/574 , G01P15/125
Abstract: A microelectromechanical (MEMS) sensor comprises MEMS components located within a MEMS layer and located relative to one or more electrodes. A plurality of proof masses are located within the MEMS layer and are not electrically coupled to each other within the MEMS layer. Both the first proof mass and the second proof mass move relative to at least a common electrode of the one or more electrodes, such that the relative position of each of the proof masses relative to the electrode may be sensed. A sensed parameter may be determined based on the sensed relative positions.
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公开(公告)号：WO2016030040A1
公开(公告)日：2016-03-03
申请号：PCT/EP2015/064042
申请日：2015-06-23
Applicant: ROBERT BOSCH GMBH
Inventor： STUMBER, Michael , STEIN, Benedikt , SCHELLING, Christoph
CPC classification number: B81B3/0086 , B81B2201/01 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2203/0127 , B81B2203/0136 , B81C1/00801
Abstract: Es wird ein Schichtmaterial vorgeschlagen, das für die Realisierung von freitragenden Strukturelementen (31) mit Elektrode (7) im Schichtaufbau eines MEMS-Bauelements (102) besonders gut geeignet ist. Erfindungsgemäß soll das freitragende Strukturelement (31) zumindest teilweise aus einer Siliziumcarbonitrid (Si 1-x-y C x N y )-basierten Schicht bestehen.
Abstract translation: 提出了一种片材，其是特别适合于悬臂的结构元件（31）与在MEMS器件（102）的层结构的电极（7）的实施。 根据本发明，自支撑的结构元件（31）以至少部分地由来自硅碳氮化物（1的Si-X-yCxNy）层为基础的。
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6.发明申请
公开(公告)号：WO02057180A2
公开(公告)日：2002-07-25
申请号：PCT/US2001/050089
申请日：2001-12-20
CPC classification number: B81C1/0015 , B81B2201/0228 , B81C2201/019 , H01L27/12 , H01L27/1203
Abstract: Methods for making thin silicon layers suspended over recesses (30) in glass wafers (22). One method includes providing a thin silicon-on-insulator (SOI) wafer (21), and a glass wafer (22). The SOI wafer (21) can include a silicon oxide layer (50) disposed between a first undoped or substantially undoped silicon layer (20) and a second silicon layer (60). Recesses (30) can be formed in the glass wafer surface (24) and electrodes (38) may be formed on the glass wafer surface (24). The first silicon layer (20) of the SOI wafer (21) is then bonded to the glass wafer surface (24) having the recesses (30), and the second silicon layer (60) is subsequently removed using the silicon oxide layer (50) as an etch stop. Next, the silicon oxide layer (50) is removed. The first silicon layer (20) can then be etched to form the desired structure. In another illustrative embodiment, the first silicon layer (120) has a patterned metal layer (129) positioned adjacent the recesses (30) in the glass wafer (22). The, the second silicon layer (60) is removed using the silicon oxide layer (50) as an etch stop, and the silicon oxide layer (50) is subsequently removed. The first silicon layer (120) is then etched using the patterned metal layer (129) as an etch stop. The patterned metal layer (120) is then removed.
Abstract translation: 使薄硅层悬浮在玻璃晶片（22）中的凹槽（30）上的方法。 一种方法包括提供薄的绝缘体上硅（SOI）晶片（21）和玻璃晶片（22）。 SOI晶片（21）可以包括设置在第一未掺杂或基本未掺杂的硅层（20）和第二硅层（60）之间的氧化硅层（50）。 可以在玻璃晶片表面（24）中形成凹部（30），并且可以在玻璃晶片表面（24）上形成电极（38）。 然后将SOI晶片（21）的第一硅层（20）接合到具有凹陷（30）的玻璃晶片表面（24），并且随后使用氧化硅层（50）去除第二硅层（60） ）作为蚀刻停止。 接下来，去除氧化硅层（50）。 然后可以蚀刻第一硅层（20）以形成所需的结构。 在另一说明性实施例中，第一硅层（120）具有与玻璃晶片（22）中的凹部（30）相邻的图案化金属层（129）。 使用氧化硅层（50）作为蚀刻停止层去除第二硅层（60），随后除去氧化硅层（50）。 然后使用图案化金属层（129）作为蚀刻停止层蚀刻第一硅层（120）。 然后去除图案化的金属层（120）。
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公开(公告)号：WO01053194A1
公开(公告)日：2001-07-26
申请号：PCT/JP2000/000222
申请日：2000-01-19
CPC classification number: G01P15/125 , B81B2201/0228 , B81B2203/0136 , B81C1/0015 , B81C1/00579 , G01P1/023 , G01P15/0802 , G01P2015/0814 , Y10T29/49002 , Y10T29/49117
Abstract: A microdevice comprises an insulator base having a recess therein and a beamlike silicon structural body provided in the front side of the base and surrounding the recess. The beamlike structural body includes a functional section that comprises a support joined to the base, a cantilevered beam integrated with the support and extending over the recess, and a conductive film formed at least over the surface of the recess immediately under the cantilevered beam and electrically connected to the support. The conductive film serves to prevent the recess from being charged positively during dry etching. Therefore the etching gas having positive charge is repelled by the electrical repulsive force exerted by the recess and do not corrode the structural body. Thus such a microdevice has a beamlike structural body of high shape and dimensional precisions, providing high reliability and high degree of freedom of design.
Abstract translation: 微型装置包括其中具有凹部的绝缘体基座和设置在基座的前侧并围绕凹部的梁状硅结构体。 梁状结构体包括功能部分，其包括连接到基部的支撑件，与支撑件一体化并在凹部上延伸的悬臂梁，以及形成在悬臂梁正下方的至少在凹部的表面上的导电膜， 连接到支持。 导电膜用于防止凹痕在干蚀刻期间被正电充电。 因此，具有正电荷的蚀刻气体被凹部施加的电斥斥力排斥，并且不会腐蚀结构体。 因此，这种微型装置具有高度形状和尺寸精度的梁状结构体，提供高可靠性和高设计自由度。
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公开(公告)号：WO2015186772A1
公开(公告)日：2015-12-10
申请号：PCT/JP2015/066146
申请日：2015-06-04
Applicant: 株式会社村田製作所
IPC: B81B3/00 , G01C19/5762
CPC classification number: B81B3/0021 , B81B3/00 , B81B3/0045 , B81B2201/0228 , B81B2201/0242 , B81B2203/0154 , G01C19/5762 , H01L41/113 , H01L41/1132 , H01L41/125
Abstract: ＭＥＭＳ構造体（１）は、基板（２）上に形成されたアンカー（２２）等によって、基板（２）表面に固設されたＺ方向検出電極（１０）の上方に、本体部（２０）、可動部（３０）を配置して構成されている。可動部（３０）における可動錘（３１）は、Ｙ方向へ弾性変形可能な各弾性支持部（３３）によって、中間フレーム部（３２）に対して接続されているので、可動部（３０）は、本体部（２０）に対して、Ｙ方向へ相対的に変位し得る。又、可動部（３０）における中間フレーム部（３２）は、Ｘ方向側の一端部に配設されたトーションバー（３４）の捩れ変形によって、本体部（２０）に対して揺動可能に支持されているので、可動部（３０）は、可動錘（３１）及び中間フレーム部（３２）を一体的に、Ｚ方向に変位する。
Abstract translation: 该MEMS结构（1）由主体部分（20）和可移动部分（30）构成，其通过形成在基板（2）上的锚固件（22）等设置在z方向检测器 固定在基板（2）的表面上的电极（10）。 由于可动部30的可移动重物31通过可沿y方向弹性变形的弹性支撑部33与中间框架部32连接，所以可动部30可以 相对于主体部分（20）在Y方向相对移位。 此外，由于可动部（30）的中间框架部（32）被支撑成能够通过扭转杆（34）的扭转而相对于主体部（20）摆动， 一端在x方向侧，可动部（30）与z方向一体地与可移动重物（31）和中间框架部（32）一体地变形。
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公开(公告)号：WO2014151905A1
公开(公告)日：2014-09-25
申请号：PCT/US2014/026646
申请日：2014-03-13
Applicant: GOGOI, Bishnu
Inventor： GOGOI, Bishnu
CPC classification number: B81B7/02 , B81B2201/0207 , B81B2201/0214 , B81B2201/0228 , B81B2201/0257 , B81B2201/0264 , B81B2201/0278 , B81B2207/012 , B81B2207/05 , B81B2207/09 , H01L27/14 , H01L27/16 , H01L27/22 , H01L41/1132 , H01L41/1138 , H01L2924/00 , H05K7/02
Abstract: A distributed sensor system is disclosed that provides spatial and temporal data in an operating environment. The distributed sensor nodes can be coupled together to form a distributed sensor system. For example, a distributed sensor system comprises a collection of Sensor Nodes (SN) that are physically coupled and are able to collect data about the environment in a distributed manner. An example of a distributed sensor system comprises a first sensor node and a second sensor node. Each sensor node has a plurality of sensors or a MIMS device. Each sensor node can also include electronic circuitry or a power source. A joint region is coupled between a first flexible interconnect region and a second flexible interconnect region. The first sensor node is coupled to the first flexible interconnect region. Similarly, the second sensor node is coupled to the second flexible interconnect region.
Abstract translation: 公开了一种在操作环境中提供空间和时间数据的分布式传感器系统。 分布式传感器节点可以耦合在一起以形成分布式传感器系统。 例如，分布式传感器系统包括物理耦合并且能够以分布式方式收集关于环境的数据的传感器节点（SN）的集合。 分布式传感器系统的示例包括第一传感器节点和第二传感器节点。 每个传感器节点具有多个传感器或MIMS装置。 每个传感器节点还可以包括电子电路或电源。 联接区域耦合在第一柔性互连区域和第二柔性互连区域之间。 第一传感器节点耦合到第一柔性互连区域。 类似地，第二传感器节点耦合到第二柔性互连区域。
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公开(公告)号：WO02051743A3
公开(公告)日：2003-05-22
申请号：PCT/US0150464
申请日：2001-12-20
Applicant: HONEYWELL INT INC
Inventor： CABUZ CLEOPATRA , RIDLEY JEFFREY ALAN
CPC classification number: B81C1/0015 , B81B2201/0228 , B81C2201/019
Abstract: Methods for making thin silicon layers 20 suspended over recesses 30 in glass wafers or substrates 22 are disclosed. One embodiment of the present invention includes providing a thin silicon wafer 20, and a glass wafer or substrate 22. Recesses 30 are formed in one surface 24 of the glass wafer 22, and electrodes 38 are formed in the recesses 30. The silicon wafer 20 is then bonded to the glass wafer 22 over the recesses 30. The silicon wafer 20 is then etched to impart the desired suspended or silicon wafer structure. In another embodiment of the present invention, the silicon wafer 120 has a patterned metal layer 129. The silicon wafer 120 is bonded to the glass wafer 22, with the patterned metal layer 129 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 positioned adjacent the recesses 30 in the glass wafer 22. The silicon wafer 120 is selectively etched down to the metal layer 129. The metalized layer 129 may serve to seal gasses within the recessed cavities 30 of the glass wafer 22 during the silicon etching process. The metal layer 129 can then be subsequently removed.
Abstract translation: 公开了制造悬浮在玻璃晶片或基板22中的凹槽30上的薄硅层20的方法。 本发明的一个实施例包括提供薄硅晶片20和玻璃晶片或基板22.凹部30形成在玻璃晶片22的一个表面24中，并且电极38形成在凹部30中。硅晶片20 然后在凹槽30上结合到玻璃晶片22.然后蚀刻硅晶片20以赋予所需的悬浮或硅晶片结构。 在本发明的另一个实施例中，硅晶片120具有图案化的金属层129.硅晶片120结合到玻璃晶片22上，图案化的金属层129邻近玻璃晶片22中的凹槽30定位。硅 晶片120定位成邻近玻璃晶片22中的凹部30.硅晶片120被选择性地向下蚀刻到金属层129.金属化层129可用于在硅蚀刻期间将气体密封在玻璃晶片22的凹腔30内。 处理。 然后可以随后去除金属层129。
