US08941295B2
A fluorescent material is represented by the following formula (I): M1yM2nOzNx:M3w (I); wherein M1 is selected from Sc3+, Y3+, La3+, Sm3+, Gd3+, Pm3+, Er3+, Lu3+, and combinations thereof; M2 is selected from Al3+, In3+, Ga3+, and combinations thereof; M3 is selected from Tm3+, Bi3+, Tb3+, Ce3+, Eu3+, Mn3+, Er3+, Yb3+, Ho3+, Gd3+, Pr3+, Dy3+, Nd3+, and combinations thereof; 0.6≦x/n≦1.6, 0.54≦y/n≦0.6, 0
US08941294B2
In various embodiments, a luminophore composition for low pressure discharge lamps for generating radiation with a color temperature of greater than 4800 K having a very good general color rendering index of greater than 90, the luminophore composition including at least one halophosphate luminophore, a luminophore emitting in the red wavelength region, a luminophore emitting in the blue-green wavelength region, a europium-doped luminophore emitting in the blue wavelength region and a Tb-doped luminophore emitting in the green wavelength region, wherein the luminophore composition includes a luminophore emitting in an emission range in the visible region with wavelengths of greater than 380 nm and at least one emission band in the near ultraviolet and that the emitted intensity of the luminophore is smaller in the visible region than in the near ultraviolet region.
US08941291B2
A plasma actuator (1) includes four electrodes (11) and three dielectrics (10) and is disposed on the side of an object surface (B). When a high voltage is applied to the electrodes (11), a plasma (15) is generated at an end (10a) of each dielectric (10) exposed so as to be accessible to a gas. In the plasma actuator (1), the electrodes (11) and dielectrics (10) are alternately stacked one on another. The plasma actuator (1) includes a stepped exposed portion (X). The plasma actuator (1) in which the electrodes (11) and dielectrics (10) are arranged such that the ends (10a) of the dielectrics (10) are exposed in the normal line direction of the object surface (B) in the stacked order in the stepped exposed portion (X) can suppress the flow of the generated plasma even when the plasma actuator is exposed to a high-speed airflow under high pressure. This stabilizes the plasma.
US08941289B2
A power generation unit includes: a deforming member adapted to deform while switching a deformation direction; a piezoelectric device provided to the deforming member, and having a pair of electrodes; a displacement sensor adapted to detect a deformation amount of the deforming member, and then output deformation amount information as information related to the deformation amount; an inductor electrically connected to the piezoelectric device; a switch disposed between the piezoelectric device and the inductor; and a switch control section adapted to control the switch so as to set the pair of electrodes to a shorted state for a predetermined period of time when the deformation amount exceeds a predetermined level.
US08941284B2
The present invention relates to an electromechanical converter, in particular an electromechanical sensor, actuator and/or generator, which comprises a polymer element obtainable from a reaction mixture comprising a polyisocyanate, a polyisocyanate prepolymer and a compound having at least two isocyanate-reactive hydroxy groups. The present invention additionally relates to a process for the production of such an electromechanical converter and to the use of a polymer element according to the invention as an electromechanical element. The present invention relates further to an electronic and/or electrical device comprising an electromechanical converter according to the invention and to the use of an electromechanical converter according to the invention in an electronic and/or electrical device.
US08941267B2
A high-power induction-type power supply system includes a supplying-end module consisting of a supplying-end microprocessor, a power driver unit, a signal analysis circuit, a coil voltage detection circuit, a display unit, a power supplying unit, a resonant circuit, a supplying-end coil and a shunt resistor unit, and a receiving-end module consisting of a receiving-end microprocessor, a voltage detection circuit, a rectifier and filter circuit, an amplitude modulation circuit, a protection circuit breaker, a voltage stabilizer circuit, a DC-DC buck converter, a resonant circuit and a receiving-end coil. Subject to time series arrangement, the high-power induction-type power supply system allows transmission of data signal in a stable manner during a charging operation, assuring system operation stability and low power loss. By means of bi-phase decoding, data code is accurately decoded when the receiving-end module is at full load, ensuring system operating reliability.
US08941264B2
A plurality of modules each including at least a pair of series connected power MOSFETs are configured between a plurality of DC voltage sources, and a plurality output terminals for connection to respective loads, are controlled for selectively applying power to the loads via time delay switching incorporating forward biased intrinsic diodes of the MOSFETs in a given current path during initial application of power to a load, whereby a predetermined period of time after turning on one of the series connected MOSFETs, the associated other MOSFET is turned on to shunt its intrinsic diode for reducing the resistance in the current path to maximize current flow. The configuration of the plurality of power MOSFETs is also controlled for selectively providing bi-directional current flow between said plurality of DC voltage sources.
US08941261B2
A method is provided in one example embodiment and includes receiving a message associated with a detection of reactive power in an energy system and inducing a first quantity of reactive power at a power level specified in the message. The first quantity of reactive power is induced in order to mitigate a second quantity of reactive power that is detected on a specific segment of the energy system. The first quantity of reactive power is induced at a local level on which a source associated with the second quantity of reactive power operates. In more specific embodiments, the message is sent in response to a sensor detecting the second quantity of reactive power, where the first quantity and the second quantity of reactive power are the same. In other embodiments, the method can include receiving a second message to stop mitigating the first quantity of reactive power.
US08941257B2
In a wind power generator, a nacelle is located on an upper portion of a support rod, a rotor head having wind turbine blades fitted thereto is rotatably supported to a front end side of the nacelle, and a main shaft rotating integrally with the rotor head, a gear box coupled with the main shaft which rotates while the wind turbine blades receive a wind power, a power generator having a rotor driven by a shaft output of the gear box, a brush, and a slip ring, and a humidity management device controlling humidity inside of the power generator having the brush and the slip ring, are installed in an interior of the nacelle.
US08941256B1
A data center includes a computing room, computing devices in the computing room, an air handling system, and a turbine system. Air moved by the air handling system flows across heat producing components in the computing devices in the computing room. A rotor of the turbine system rotates in response to at least a portion of the air moved by the air handling system. The turbine system generates electricity from rotation of the rotor.
US08941255B2
A generator for a wind turbine is provided. The generator includes a housing with a multi-piece stator arrangement mounted to the housing, the stator arrangement surrounding radially inward and radially outwardly directed faces of a rotor assembly, also surrounded by the housing. The rotor assembly is configured for direct attachment to a wind turbine main shaft so that rotation of the main shaft results in like rotation of the rotor assembly. The housing is mechanically coupled to the rotor by anti-friction elements such that the rotor is free to rotate about its central axis relative to the housing, and such that radial displacement of the rotor due to main shaft deflections results in a like radial displacement of the housing.
US08941253B2
A method for operating a wind turbine which includes a rotor hub supporting a rotor blade includes: a) detecting changes in the aerodynamic performance of the rotor blade; b) determining a first control rule; c) determining a first power output information indicating a first power output based on the first control rule; d) changing an operational parameter and choosing a second control rule such that the first control rule is replaced by the second control rule; e) determining a second power output information indicating a second power output based on the second control rule. c) comparing the first and second power output information. If the second power output exceeds the first power output, repeating a)-f) with the second control rule being used as the first control rule in b); otherwise repeating a)-f) a different second control rule is applied in d).
US08941246B2
In one embodiment, a semiconductor device includes a chip stacked body disposed on an interposer substrate and an interface chip mounted on the chip stacked body. The chip stacked body has plural semiconductor chips, and is electrically connected via through electrodes provided in the semiconductor chips excluding a lowermost semiconductor chip in a stacking order of the plural semiconductor chips and bump electrodes. The interface chip is electrically connected to the interposer substrate via a rewiring layer formed on a surface of an uppermost semiconductor chip in the stacking order or through electrodes provided in the interface chip.
US08941244B1
A semiconductor structure includes a molding compound, a conductive plug, and a cover. The conductive plug is in the molding compound. The cover is over a top meeting joint between the conductive plug and the molding compound. The semiconductor structure further has a dielectric. The dielectric is on the cover and the molding compound.
US08941239B2
A copper interconnect structure in a semiconductor device including an opening formed in a dielectric layer of the semiconductor device, the opening having sidewalls and a bottom. A first barrier layer is conformally deposited on the sidewalls and the bottom of the opening. A first seed layer is conformally deposited on the first barrier layer. A second barrier layer is conformally deposited on the first seed layer. A second seed layer is conformally deposited on the second barrier layer and a conductive plug is deposited in the opening of the dielectric layer.
US08941236B2
Provided are an electronic assembly and method for forming the same, comprising a first element having a first surface and a second element having a second surface.Electrical connections are provided between the first and the second elements formed by heating solder bumps. At least one collapse limiter structure is coupled to at least one of the first and the second surfaces, wherein the at least one collapse limiter structure is between at least two of the electrical connections.
US08941233B1
Integrated circuit (IC) packages with an inter-die thermal spreader are disclosed. A disclosed IC package includes a plurality of stacked dies disposed on a package substrate. A heat spreader is disposed on a top die of the plurality of stacked dies. The IC package further includes a thermal spreader layer disposed adjacent to at least one die of the plurality of stacked dies. The thermal spreader layer may extend out of a periphery of the plurality of stacked dies and may be attached to the heat spreader through a support member.
US08941223B2
A MEMS lead frame package body encloses a MEMS device enclosed in an internal cavity formed by the mold body and cover. A conductive internal shell with a connection window sits in the cavity. The MEMS device is mounted in the shell and electrically coupled to the lead frame through wire bonds directed through the connection window. To accommodate a MEMS microphone, an acoustic aperture extends through the mold body aligned with a hole in the internal shell.
US08941222B2
A semiconductor package includes at least one semiconductor die having an active surface, an interposer element having an upper surface and a lower surface, a package body, and a lower redistribution layer. The interposer element has at least one conductive via extending between the upper surface and the lower surface. The package body encapsulates portions of the semiconductor die and portions of the interposer element. The lower redistribution layer electrically connects the interposer element to the active surface of the semiconductor die.
US08941217B2
A semiconductor device includes a semiconductor substrate having a first side and a second side opposite the first side, an active area and a through contact area, the active area including a transistor structure having a control electrode, the through contact area including a semiconductor mesa having insulated sidewalls. The semiconductor device further includes a first metallization on the first side in the active area and a recess extending from the first side into the semiconductor substrate and between the active area and the through contact area and including in the through contact area a horizontally widening portion, the recess being at least partly filled with a conductive material forming a first conductive region in ohmic contact with the semiconductor mesa and the transistor structure. The semiconductor device also includes a control metallization on the second side and in ohmic contact with the semiconductor mesa.
US08941216B2
The inventive concept provides semiconductor devices having through-vias and methods for fabricating the same. The method may include forming a via-hole opened toward a top surface of a substrate and partially penetrating the substrate, forming a via-insulating layer having a first thickness on a bottom surface of the via-hole and a second thickness smaller than the first thickness on an inner sidewall of the via-hole, forming a through-via in the via-hole which the via-insulating layer is formed in, and recessing a bottom surface of the substrate to expose the through-via. Forming the via-insulating layer may include forming a flowable layer on the substrate, and converting the flowable layer into a first flowable chemical vapor deposition layer having the first thickness on the bottom surface of the via-hole.
US08941212B2
The present disclosure relates to a multi-level integrated inductor that provides for a good inductance and Q-factor. In some embodiments, the integrated inductor has a first inductive structure with a first metal layer disposed in a first spiral pattern onto a first IC die and a second inductive structure with a second metal layer disposed in a second spiral pattern onto a second IC die. The first IC die is vertically stacked onto the second IC die. A conductive interconnect structure is located vertically between the first and second IC die and electrically connects the first metal layer to the second metal layer. The conductive interconnect structure provides for a relatively large distance between the first and second inductive structures that provides for an inductance having a high Q-factor over a large range of frequencies.
US08941209B2
Semiconductor device comprises a memory cell region, a peripheral region, and first wiring. The memory cell region includes a first isolation region, and a first active region provided so as to be divided off by the first isolation region. The peripheral region includes a second isolation region, and a second active region divided off by the first and second isolation regions and protruding from the upper surface of an insulating film located in the first and second isolation regions. The first wiring is buried in portions of a semiconductor substrate within the memory cell region and the peripheral region, so as to extend over the first and second active regions in a first direction. The first-direction width of the second active region is constant.
US08941197B2
A magnetic random access memory which is a memory cell array including a magnetoresistive effect element having a fixed layer whose magnetization direction is fixed, a recording layer whose magnetization direction is reversible, and a non-magnetic layer provided between the fixed layer and the recording layer, wherein all conductive layers in the memory cell array arranged below the magnetoresistive effect element are formed of materials each containing an element selected from a group including W, Mo, Ta, Ti, Zr, Nb, Cr, Hf, V, Co, and Ni.
US08941193B2
A simple and cost-effective manufacturing method for hybrid integrated components including at least one MEMS element, a cap for the micromechanical structure of the MEMS element, and at least one ASIC substrate, using which a high degree of miniaturization may be achieved. The micromechanical structure of the MEMS element and the cap are manufactured in a layered structure, proceeding from a shared semiconductor substrate, by applying at least one cap layer to a first surface of the semiconductor substrate, and by processing and structuring the semiconductor substrate proceeding from its other second surface, to produce and expose the micromechanical MEMS structure. The semiconductor substrate is then mounted with the MEMS-structured second surface on the ASIC substrate.
US08941191B2
A radio frequency microelectromechanical (RF MEMS) device can comprise an actuation p-n junction and a sensing p-n junction formed within a semiconductor substrate. The RF MEMS device can be configured to operate in a mode in which an excitation voltage is applied across the actuation p-n junction varying a non-mobile charge within the actuation p-n junction to modulate an electric field acting upon dopant ions and creating electrostatic forces. The electrostatic forces can create a mechanical motion within the actuation p-n junction. The mechanical motion can modulate a depletion capacitance of the sensing p-n junction, thereby creating a motional current. At least one of the p-n junctions can be located at an optimal location to maximize the efficiency of the RF MEMS device at high resonant frequencies.
US08941187B2
In a three-dimensional transistor configuration, a strain-inducing isolation material is provided, at least in the drain and source areas, thereby inducing a strain, in particular at and in the vicinity of the PN junctions of the three-dimensional transistor. In this case, superior transistor performance may be achieved, while in some illustrative embodiments even the same type of internally stressed isolation material may result in superior transistor performance of P-channel transistors and N-channel transistors.
US08941179B2
FinFETs and fin isolation structures and methods of manufacturing the same are disclosed. The method includes patterning a bulk substrate to form a plurality of fin structures of a first dimension and of a second dimension. The method includes forming oxide material in spaces between the plurality of fin structures of the first dimension and the second dimension. The method includes forming a capping material over sidewalls of selected ones of the fin structures of the first dimension and the second dimension. The method includes recessing the oxide material to expose the bulk substrate on sidewalls below the capping material. The method includes performing an oxidation process to form silicon on insulation fin structures and bulk fin structures with gating. The method further includes forming a gate structure over the SOI fin structures and the bulk fin structures.
US08941176B2
An embodiment of an integrated device includes a semiconductor body, in which an STI insulating structure is formed, laterally delimiting first active areas and at least one second active area in a low-voltage region and in a power region of the semiconductor body, respectively. Low-voltage CMOS components are housed in the first active areas. Formed in the second active area is a power component, which includes a source region, a body region, a drain-contact region, and at least one LOCOS insulation region, arranged between the body region and the drain-contact region and having a prominent portion that emerges from a surface of the semiconductor body, and an embedded portion inside it. The prominent portion of the LOCOS insulation region has a volume greater than that of the embedded portion.
US08941165B2
Methods are provided for fabricating semiconductor devices having capacitors, which prevent lower electrodes of the capacitors from breaking or collapsing and which provide increased capacitance of the capacitors. For instance, a method includes forming a first insulating layer on a semiconductor substrate, forming a first hole in the first insulating layer, forming a contact plug in the first hole, forming a second insulating layer having a landing pad, wherein the landing pad contacts an upper surface of the contact plug, forming an etch stop layer on the landing pad and the second insulating layer, forming a third insulating layer on the etch stop layer; forming a third hole through the third insulating layer and etch stop layer to expose the landing pad, selectively etching the exposed landing pad, forming a lower electrode on the selectively etched landing pad, and then forming a capacitor by forming a dielectric layer and an upper electrode on the lower electrode.
US08941163B2
A DRAM device includes plural N-channel MIS transistors arranged in a matrix over a P well, and a plurality of capacitors formed corresponding to the plurality of N-channel MIS transistors, and plural word lines formed corresponding to each row of the plurality of N-channel MIS transistors, and a plurality of bit lines formed corresponding to each column of the plurality of N-channel MIS transistors, and a P+ diffusion layer formed extending in the direction that the plurality of word lines extend and supplied with a p well voltage potential.
US08941159B2
Embodiments of an apparatus including a color filter arrangement formed on a substrate having a pixel array formed therein. The color filter arrangement includes a clear filter having a first clear hard mask layer and a second clear hard mask layer formed thereon, a first color filter having the first clear hard mask layer and the second hard mask layer formed thereon, a second color filter having the first clear hard mask layer formed thereon, and a third color filter having no clear hard mask layer formed thereon. Other embodiments are disclosed and claimed.
US08941153B2
An integrated circuit structure includes a semiconductor substrate including a first portion in a first device region, and a second portion in a second device region. A first semiconductor fin is over the semiconductor substrate and has a first fin height. A second semiconductor fin is over the semiconductor substrate and has a second fin height. The first fin height is greater than the second fin height.
US08941149B2
A semiconductor device includes: a first semiconductor layer formed on a substrate and formed of a nitride-based semiconductor; a second semiconductor layer formed on a surface of the first semiconductor layer and formed of a nitride-based semiconductor having a wider band-gap than the first semiconductor layer; first and second electrodes formed on a surface of the second semiconductor layer; an inter-electrode insulator film that is formed between the first and second electrodes on the surface of the second semiconductor layer; and a dielectric constant adjustment layer formed on the inter-electrode insulator film and formed of an electric insulator. The first electrode has a field plate portion formed so as to ride on the inter-electrode insulator film, and the dielectric constant adjustment layer has a first layer that contacts a lateral end portion of the field plate portion and a second layer formed on the first layer.
US08941144B2
This disclosure discloses a light-emitting device. The light-emitting device comprises: a substrate; and a first light-emitting unit comprising a plurality of light-emitting diodes electrically connected to each other on the substrate. A first light-emitting diode in the first light-emitting unit comprises a first semiconductor layer with a first conductivity-type, a second semiconductor layer with a second conductivity-type, and a light-emitting stack formed between the first and second semiconductor layers. The first light-emitting diode in the first light-emitting unit further comprises a first connecting layer on the first semiconductor layer for electrically connecting to a second light-emitting diode in the first light-emitting unit; a second connecting layer, separated from the first connecting layer, formed on the first semiconductor layer; and a third connecting layer on the second semiconductor layer for electrically connecting to a third light-emitting diode in the first light-emitting unit.
US08941141B2
A light-emitting device having a corner includes a light-emitting stacked layer having a first conductivity type semiconductor layer, a light-emitting layer formed on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer formed on the light-emitting layer. A transparent conductive oxide layer is formed on the second conductivity type semiconductor layer. The upper surface of the transparent conductive oxide layer is textured. A first electrode is formed on the upper surface of the transparent conductive oxide layer. A second electrode is formed on the first conductivity type semiconductor layer. A planarization layer is formed on the transparent conductive oxide layer and the first conductivity type semiconductor layer, and a reflective layer is formed on the upper surface of the planarization layer. The projection of the edge of the reflective layer is not overlapped with the edge of the first electrode or the second electrode.
US08941128B2
Embodiments of the present disclosure are directed towards passivation techniques and configurations for a flexible display. In one embodiment, a flexible display includes a flexible substrate, an array of display elements configured to emit or modulate light disposed on the flexible substrate, and a passivation layer including molecules of silicon (Si) bonded with oxygen (O) or nitrogen (N), the passivation layer being disposed on the array of display elements to protect the array of display elements from environmental hazards.
US08941121B2
A first region of a silicon carbide layer constitutes a first surface, and is of a first conductivity type. A second region is provided on the first region, and is of a second conductivity type. A third region is provided on the second region, and is of the first conductivity type. A fourth region is provided in the first region, located away from each of the first surface and the second region, and is of the second conductivity type. A gate insulation film is provided on the second region so as to connect the first region with the third region. A gate electrode is provided on the gate insulation film. A first electrode is provided beneath the first region. A second electrode is provided on the third region.
US08941120B2
According to one embodiment, a semiconductor device includes a first, a second, a third, a fourth semiconductor region, a control electrode, and an insulating film. The first region contains silicon carbide. The second region is provided on the first region and contains silicon carbide. The third region is provided on the second region and contains silicon carbide. The fourth region is provided on the third region and contains silicon carbide. The control electrode is provided in a trench. The trench is formed in the fourth, the third, and the second semiconductor region. The insulating film is provided between a side surface of the trench and the control electrode. The insulating film contains a high-dielectric constant region. The high-dielectric constant region contacts with at least the third semiconductor region. The high-dielectric constant region has a higher dielectric constant than a dielectric constant of silicon oxide.
US08941117B2
An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction.
US08941114B2
A protective circuit includes a non-linear element, which includes a gate electrode, a gate insulating layer covering the gate electrode, a pair of first and second wiring layers whose end portions overlap with the gate electrode over the gate insulating layer and in which a second oxide semiconductor layer and a conductive layer are stacked, and a first oxide semiconductor layer which overlaps with at least the gate electrode and which is in contact with the gate insulating layer, side face portions and part of top face portions of the conductive layer and side face portions of the second oxide semiconductor layer in the first wiring layer and the second wiring layer. Over the gate insulating layer, oxide semiconductor layers with different properties are bonded to each other, whereby stable operation can be performed as compared with Schottky junction. Thus, the junction leakage can be decreased and the characteristics of the non-linear element can be improved.
US08941092B2
Disclosed are a method which improves the performance of a semiconductor element, and a semiconductor element with improved performance. The method for forming a semiconductor element structure includes a heterojunction forming step in which a heterojunction is formed between a strained semiconductor layer (21) in which a strained state is maintained, and relaxed semiconductor layers (23, 25). The heterojunction is formed by performing ion implantation from the surface of a substrate (50) which has a strained semiconductor layer (20) partially covered with a covering layer (30) on an insulating oxide film (40), and altering the strained semiconductor layer (20) where there is no shielding from the covering layer (30) to relaxed semiconductor layers (23, 25) by relaxing the strained state of the strained semiconductor layer (20), while maintaining the strained state of the strained semiconductor layer (21) where there is shielding from the covering layer (30).
US08941084B2
The invention relates generally to treatment of solid cancers. More particularly, a method and apparatus for efficient radiation dose delivery to a tumor is described. Preferably, radiation is delivered through an entry point into the tumor and Bragg peak energy is targeted to a distal or far side of the tumor from an ingress point. Delivering Bragg peak energy to the distal side of the tumor from the ingress point is repeated from multiple rotational directions. Beam intensity is proportional to radiation dose delivery efficiency. The multi-field irradiation process with energy levels targeting the far side of the tumor from each irradiation direction provides even and efficient charged particle radiation dose delivery to the tumor. Preferably, the charged particle therapy is timed to patient respiration via control of charged particle beam injection, acceleration, extraction, and/or targeting methods and apparatus.
US08941075B2
A system for detecting fissile materials which utilizes boron coated straw detectors in which the straws have non-circular cross sections. Embodiments include straws having star shaped cross sections of various configurations including a six pointed star. The system can include tubular housings having one or more shaped straws stacked within the housings.
US08941067B2
A method for cooling an imaging device includes providing, by a cold finger, a cold sink to the imaging device and conducting heat from a cold shield, a sensor chip assembly and a leadless chip carrier towards the cold finger through a plurality of parallel paths. The imaging device includes a dewar assembly having a cold shield, a sensor chip assembly disposed on a leadless chip carrier (LCC) and configured to capture an infrared image, a cold finger configured to cool the dewar assembly; and a thermal adapter. The thermal adapter is configured to draw heat from the cold shield and sensor chip assembly through a plurality of parallel paths towards the cold finger.
US08941066B2
An apparatus and method of processing signals from a passive infrared sensor evaluates energy of received signals. An integration or accumulation process can be used to provide an indicator of signal energy. This indicator can be compared to a predetermined alarm threshold to determine if an alarm indication should be generated.
US08941058B2
The invention relates to ions guided by gas flows in mass spectrometers, particularly in RF multipole systems, and to RF quadrupole mass filters and their operation with gas flows in tandem mass spectrometers. The invention provides a tandem mass spectrometer in which the RF quadrupole mass filter is operated at vacuum pressures in the medium vacuum pressure regime, utilizing a gas flow to drive the ions are through the mass filter. Vacuum pressures between 0.5 to 10 pascal are maintained in the mass filter. The mass filter may be enclosed by a narrow enclosure to guide the gas flow. The quadrupole mass filter may be followed by an RF multipole system, operated at the same vacuum pressure, serving as fragmentation cell to fragment the selected parent ions. The fragmentation cell may be enclosed by the same enclosure which already encloses the mass filter, so the ions may be driven by the same gas flow at the same vacuum pressure, greatly simplifying the required vacuum pumping system in tandem mass spectrometers. There are many other applications utilizing gas flows including supersonic gas jets in mass spectrometry.
US08941055B2
Ions with a predetermined ion mobility range are produced by filtering ions entrained in a stream of moving gas with two ion mobility low pass filters located consecutively in the gas stream. Each filter is formed by applying a DC electric field to the gas stream which causes the ions to move in a direction opposite to the gas flow. Ions are collected between the two filters and transferred to a detector or analyzing device. In one embodiment, the maximum field strength of the electric field barrier in the first ion mobility low pass filter is continued as a plateau of essentially constant field strength up to the electric field barrier in the second ion mobility low pass filter, which has a maximum field strength higher that the maximum field strength of the electric field barrier in the first ion mobility low pass filter.
US08941049B2
A readout apparatus and method for processing spatially distributed signals is disclosed. The readout apparatus and method may reduce/eliminate the impact gain variations among a plurality of sensing channels. This is done by continuously varying the dispersion properties of a signal distribution device, which may induce a spatial shift of the signal distribution during data acquisition, allowing the distributed signals to move across the sensor area. Shifting of the distributed signals may occur multiple times, hence eliminating the impact of gain variation across the sensor array. The accumulated data may be re-assembled subsequently to complete the readout operation.
US08941041B2
A cooking apparatus is provided. The cooking apparatus includes a cooking cavity, an upper space formed above the cooking cavity, lateral side spaces formed to at opposite lateral sides of the cooking cavity, a rear space formed behind the cooking cavity, and a lower space formed below the cooking cavity. A fan provided in the rear space generates a cooling flow that cools components housed in the rear space. A cooling flow path extends from the rear space and into the upper space and lateral side spaces. Flow from the upper space enters the door to cool the door and is exhausted through a lower portion of the door. Flow from the lateral side spaces, which includes an exhaust flow from the cooking cavity, is guided to the lower space and exhausted. In this manner, the cooking apparatus can be completely cooled and cooking odors and heat appropriately exhausted by the cooling fan positioned in the rear space.
US08941038B2
A support assembly is provided for supporting a household appliance such as a non-convection microwave oven in a free-standing vertical relation with another household appliance such that the non-convection microwave oven is supported above the other household appliance. The support assembly includes a base tray having a floor portion on which the non-convection microwave oven can be disposed, brackets for fixedly securing the base tray to the other household appliance, and a pair of bracket arms for securing a trim element to the base tray.
US08941037B2
A substrate processing apparatus that can accurately control the temperature of a focus ring without causing abnormal electric discharge and the back-flow of radio frequency electrical power during the application of radio frequency electrical power. A wafer is mounted on a mounting stage disposed in a housing chamber. An annular focus ring is mounted on the mounting stage in such a manner as to surround the peripheral portion of the mounted wafer. The pressure in the housing chamber is reduced, radio frequency electrical power is applied to the mounting stage, and the focus ring generates heat by itself.
US08941024B2
A gouging carbon rod using an aluminum or aluminum alloy material as its conducting material includes a carbon rod unit, which has an elongated hollow main body internally defining a central space portion and having a first and a second open end; an aluminum/aluminum alloy unit, which is formed by high-pressure injection molding a molten aluminum or aluminum alloy material in the central space portion of the main body via the second open end, such that the aluminum/aluminum alloy unit so formed includes a shielded section located in the central space portion and an exposed section projected from the main body via the second open end. In this manner, the energy, time and labor costs for binding the aluminum material to the carbon rod are lowered, compared to the conventional carbon rod produced by metal thermal spraying technique, and the problem of uneven thickness of metal coating is solved.
US08941021B2
The present disclosure provides a wiring device having a color change kit. The color change kit includes a removable skirt and switch cover. The skirt and switch cover, which are disposed on the wiring device and accessible by an end-user, are easily detachable from the wiring device. Thus, the skirt and the switch cover are replaced without replacing the entire wiring device. Further, the skirt and switch cover is replaced without removing the wiring device from a wall box or further disassembling the entire wiring device. In certain exemplary embodiments, the skirt is disposed within a housing of the wiring device, and the switch cover is disposed within the skirt.
US08941019B2
A slit opening 8 is formed on a lower principal surface 6a of a hard disk case 6, in the vicinity of the inner side of an angle part formed by a lower left lateral wall 6e and an opposing lower lateral wall 6c. A hard disk drive 7 is placed in the hard disk case 6. When the hard disk drive 7 is subjected to vibration caused by disturbance on the hard disk case 6, elastic deformation of an angle part 8a of the slit opening 8 occurs using an axis 8b as a center to reduce vibration of the hard disk drive 7. Thus, it is possible to reduce the thickness of the hard disk case 6. With such a configuration, a hard disk case that is for housing an electronic component and that can have a small thickness can be provided.
US08941015B2
An embedded capacitor substrate module includes a substrate, a metal substrate and a solid electrolytic capacitor material. The solid electrolytic capacitor material is formed on the metal substrate, so as to form a solid electrolytic capacitor with the substrate. The embedded capacitor substrate module further includes an electrode lead-out region formed by extending the substrate and the metal substrate. The metal substrate serves as a first electrode, and the substrate serves as a second electrode. An insulating material is formed between the substrate and the metal substrate. Therefore, the embedded capacitor substrate module is not only advantageous in having a large capacitance as the conventional solid capacitor, but also capable of being drilled or plated and electrically connected to other circuits after being embedded in a printed circuit board.
US08941009B2
An electrical junction box includes an accommodation cover in which electrical parts are accommodated, and a groove that is formed on an outer surface of the accommodation cover and linearly extends in an up-down direction of the accommodation cover. The accommodation cover includes a folded wall part at which a wall surface of the groove is folded downwards. The accommodation cover includes a box body in which the electrical parts are accommodated, and a lower cover that covers a lower portion of the box body. The groove includes a first groove part formed on the lower cover. The folded wall part is formed on the first groove part.
US08941008B2
A photoelectric-conversion-device dye comprising a ruthenium metal complex, which includes a molecule including elemental phosphorous and the molecule forms a coordinate bond at least at the phosphorous atom, and which also includes a terpyridine derivative that forms a coordinate bond and has at least one adsorbing group that exhibits adsorptivity toward a metal oxide. The adsorbing group is selected from the group consisting of a carboxylic acid group, an ester thereof, or a salt thereof; a phosphonic acid group, an ester thereof, or a salt thereof; a hydroxyl group; an alkoxy group; and a sulfonic acid group or salt thereof. The dye exhibits absorption over a wide range from the visible light region to the near-infrared region, and as a result, a photoelectric conversion film, an electrode, and a solar cell having improved photoelectric conversion efficiency are provided.
US08940997B2
Systems and methods for disposing and supporting a solar panel array are disclosed. In one embodiment, a system for supporting a solar panel array includes the use of support columns and cables suspended between the support columns, with the solar panels received by solar panel receivers that are adapted to couple to the cables. The solar panel array may then be used to provide power as well as shelter. Cooling, lighting, security, or other devices may be added to the solar panel array. Embodiments of the invention include differing ways to support the solar panels by receivers of differing construction. Special installations of the system can include systems mounted over structure, such as parking lots, roads and aqueducts.
US08940993B1
A variable tone configuration control (100, 100′) for string instruments includes a pair of pickup coils (110, 120) located on a string instrument for inducing voltages therein responsive to vibration of any of the strings thereof. The variable tone configuration control (100, 100′) further includes a pair of potentiometers (130, 140) mechanically coupled for concurrent mechanical travel of a respective displaceable contact (132, 142) thereof. The pair of potentiometers (130, 140) are operatively coupled to the pair of pickup coils (110, 120) and a pair of output terminals (102, 104) to vary the electrical configuration of the pair of pickup coils (110, 120) between the pair of pickup coils (110, 120) being connected in series and being connected in parallel as the displaceable contacts (132 and 142) are moved between opposing ends of their mechanical travel.
US08940985B2
A guitar neck joint routing system. The system includes a probe and router assembly comprising a gantry, a probe, and a plurality of routers, and a guitar neck and body nest comprising clamps and vacuum grips for holding a guitar neck and guitar body in place for taking measurements and routing a dovetail joint.
US08940982B2
According to the invention, there is provided seed and plants of the hybrid corn variety designated CH439482. The invention thus relates to the plants, seeds and tissue cultures of the variety CH439482, and to methods for producing a corn plant produced by crossing a corn plant of variety CH439482 with itself or with another corn plant, such as a plant of another variety. The invention further relates to genetic complements of plants of variety CH439482.
US08940980B2
According to the invention, there is provided seed and plants of the hybrid corn variety designated CH406206. The invention thus relates to the plants, seeds and tissue cultures of the variety CH406206, and to methods for producing a corn plant produced by crossing a corn plant of variety CH406206 with itself or with another corn plant, such as a plant of another variety. The invention further relates to genetic complements of plants of variety CH406206.
US08940975B2
The invention provides seed and plants of the tomato variety designated Picus. The invention thus relates to the plants, seeds and tissue cultures of tomato variety Picus and to methods for producing a tomato plant produced by crossing a plant of tomato variety Picus with itself or with another tomato plant, such as a plant of another variety. The invention further relates to seeds and plants produced by such crossing, and also relates to parts of a plant of tomato variety Picus including the fruit and gametes of such plants. The invention also relates to tomato variety FDS 14-2081, and to seeds and plants produced by crossing a plant of tomato variety FDS 14-2081 with itself or another tomato plant. The present invention is also directed to tomato variety FDS 14-2090, and to seeds and plants produced by crossing a plant of tomato variety FDS 14-2090 with itself or another tomato plant.
US08940970B2
A novel soybean variety, designated XB33U13 is provided. Also provided are the seeds of soybean variety XB33U13, cells from soybean variety XB33U13, plants of soybean XB33U13, and plant parts of soybean variety XB33U13. Methods provided include producing a soybean plant by crossing soybean variety XB33U13 with another soybean plant, methods for introgressing a transgenic trait, a mutant trait, and/or a native trait into soybean variety XB33U13, methods for producing other soybean varieties or plant parts derived from soybean variety XB33U13, and methods of characterizing soybean variety XB33U13. Soybean seed, cells, plants, germplasm, breeding lines, varieties, and plant parts produced by these methods and/or derived from soybean variety XB33U13 are further provided.
US08940966B2
A soybean cultivar designated XB36AW12 is disclosed. The invention relates to the seeds of soybean cultivar XB36AW12, to the plants of soybean cultivar XB36AW12, to the plant parts of soybean cultivar XB36AW12, and to methods for producing progeny of soybean cultivar XB36AW12. The invention also relates to methods for producing a soybean plant containing in its genetic material one or more transgenes and to the transgenic soybean plants and plant parts produced by those methods. The invention also relates to soybean cultivars or breeding cultivars, and plant parts derived from soybean cultivar XB36AW12. The invention also relates to methods for producing other soybean cultivars, lines, or plant parts derived from soybean cultivar XB36AW12, and to the soybean plants, varieties, and their parts derived from use of those methods. The invention further relates to hybrid soybean seeds, plants, and plant parts produced by crossing cultivar XB36AW12 with another soybean cultivar.
US08940963B2
Process of producing in a plant, in plant tissue, or in plant cells a hetero-oligomeric protein comprising at least a first and a second protein subunit, said process comprising expressing in plant cells at least said first and said second protein subunit by (i) providing to said plant, said plant tissue or said plant cells a plus-sense single-stranded RNA viral vector encoding at least said first and said second protein subunit or (ii) providing to said plant, said plant tissue or said plant cells a first and a second plus-sense single-stranded RNA viral vector, said first viral vector encoding at least said first protein subunit, said second viral vector encoding at least said second protein subunit, whereby at least said first viral vector and said second viral vector are non-competing viral vectors.
US08940957B2
A method of removing heterocyclic sulfide impurities from a fluid stream is presented. The method comprises contacting the fluid stream with a sorbent comprising metallic copper.
US08940954B2
A process is disclosed that includes brominating a C2, C3, C4, C5 or C6 alkane with elemental bromine to form a bromo-alkane. The bromo-alkane is reacted to form a C2, C3, C4, C5 or C6 alkene and HBr. The HBr is oxidized to form elemental bromine.
US08940952B2
A new family of coherently grown composites of TUN and IMF zeotypes have been synthesized. These zeolites are represented by the empirical formula. NanMmk+TtAl1-xExSiyOz where “n” is the mole ratio of Na to (Al+E), M represents a metal or metals from zinc, Group 1, Group 2, Group 3 and or the lanthanide series of the periodic table, “m” is the mole ratio of M to (Al+E), “k” is the average charge of the metal or metals M, T is the organic structure directing agent or agents, and E is a framework element such as gallium. These zeolites are similar to TNU-9 and IM-5 but are characterized by unique compositions and synthesis procedures and have catalytic properties for carrying out various hydrocarbon conversion processes and separation properties for carrying out various separations.
US08940948B2
Provided are methods for producing fluorinated organic compounds, which preferably comprises converting at least one compound of formula (I) CH2XCHZCF3 to at least one compound of formula (II) CHX═CZCF3 where X and Z are independently H or F, with the proviso that X and Z are not the same. The converting step comprises catalytically reacting at least one compound of formula (I), preferably via dehydrogenation or oxidative dehydrogenation. In another aspect, the inventive method of preparing fluorinated organic compounds comprises converting a reaction stream comprising at least one pentafluoropropene to a product stream comprising at least one pentafluoropropane and at least one compound of formula (I), separating out the compound of formula (I) from the product stream, and converting the compound of formula (I) separated from the product stream to at least one compound of formula (II), wherein the conversion the compound of formula (I) to 3,3,3-trifluoropropyne is substantially limited.
US08940933B2
The present invention provides a method for producing polyoxyalkylene alkyl ether carboxylic acid and a salt thereof, including supplying polyoxyalkylene alkyl ether, oxygen, and water to a continuous stirred tank reactor containing a noble metal catalyst to oxidize the polyoxyalkylene alkyl ether with oxygen, in which the molar ratio of the salt of polyoxyalkylene alkyl ether carboxylic acid to the polyoxyalkylene alkyl ether in the continuous stirred tank reactor is controlled to 0.33 to 49.
US08940932B2
A process for stably producing high purity acetic acid comprising a condensation step for condensing and temporarily holding the lower boiling component in a decanter and discharging from the decanter; and a step for separating the lower boiling component discharged from the decanter into acetaldehyde and a liquid residue and recycling the liquid residue to the reaction system. In the condensation step, the amount of the lower boiling component to be held is controlled based on the fluctuating flow rate of the lower boiling component to be fed to the decanter.
US08940931B2
The present invention provides a method, as a means for industrially producing a refined 6-bromo-2-naphthalenecarboxylic acid product from a crude 6-bromo-2-naphthalenecarboxylic acid product, comprising: causing the above crude product to react with sodium hydroxide in water to precipitate a sodium salt of 6-bromo-2-naphthalenecarboxylic acid; performing recrystallization treatment for the obtained precipitate; causing the obtained crystal to react with acid in water to precipitate 6-bromo-2-naphthalenecarboxylic acid; and recovering the obtained precipitate.
US08940919B2
A compound represented by the following general formula (1), and a method for producing the compound represented by the general formula (1), the method comprising: reacting together a compound represented by the following general formula (2), a compound represented by the following general formula (3), and a compound represented by the following general formula (4): wherein R1 represents any of a protective group of a carboxyl group, and a hydrogen atom, R2 and R3 each independently represent any of a protective group of an amino group, and a hydrogen atom, and R4 represents any of a protective group of a carboxyl group, and a hydrogen atom.
US08940918B2
There are provided compounds and methods for the detection of amyloids and treatment of diseases related to amyloids including Alzheimer's disease and other related amyloid-based neurodegenerative diseases.
US08940914B2
Disclosed are compositions and methods for the production of mono-esters and di-esters from the reaction of HMF and a reactant selected from a diacid or a diacid derivative; typical reactants are PAN, phthaloyl dichloride, dimethyl phthalate, maleic acid, and maleic anhydride or mono-esters that can be prepared from HMF and MAN.
US08940912B2
The present invention features a process for the preparation of 4-oxo-3-[(phenylmethyl)oxy]-4-H-pyran-2-carboxylic acid, an intermediate useful in the synthesis of HIV integrase inhibitors. The process involves (a) treating a compound of formula P-2 with lithium bis(trimethylsilyl)amide and benzaldehyde to form a compound of formula P-3, (b) treating the compound of formula P-3 with triethylamine and methanesulfonyl chloride followed by N-methyl-2-pyrrolidone and 1,8-diazabicyclo[5.4.0]undec-7-ene to form a compound of formula P-4, and (c) treating the compound of formula P-4 with RuCl3 and NaIO4 to form the compound of formula P-5.
US08940911B2
A library of unnatural squarylated homoserine lactones (SHLs) and squarylated lactones that bear potential to modulate biofilm formation in Gram negative bacteria. At low concentrations (˜200 μM), these small molecules inhibit biofilm formation of E. coli. Moreover, these compounds are not toxic up to 300 μM and do not significantly attenuate E. coli growth. The SHLs have potential to disperse established biofilm and demonstrate an enhanced reduction (˜50%) of the maximum biofilm thickness by use of SHLs during biofilm growth.
US08940896B2
In accordance with the present invention, tetracyclic caboline derivatives that inhibit the expression of VEGF post-transcriptionally have been identified, and methods for their use provided. In one aspect of the invention, these compounds useful in the inhibition of VEGF production, in the inhibition of angiogenesis, and/or in the treatment of cancer, diabetic retinopathy or exudative macular degeneration are provided. In another aspect of the invention, methods are provided for the inhibition of VEGF production, the inhibition of angiogenesis, and/or the treatment of cancer, diabetic retinopathy or exudative macular degeneration using the compounds of the invention.
US08940886B2
The present invention relates to an aptamer which includes a nucleic acid including or made up of: the sequence GGAACGCAAGAACUGAGGCCAUGAGGCGCCUUCCCUUGCUCA GGACGC (SEQ ID NO: 1), or the sequence AGCUAGGCCGCAAGGUGCCUCAACGCCAUCUGAGUGCCGACC CGAUCGC (SEQ ID NO: 2), or a sequence including or made up of at least 25 consecutive nucleotides of a sequence that is at least 80% identical to SEQ ID NO: 1 or to SEQ ID NO: 2, with the condition that a nucleic acid made up of said sequence is bonded to annexin 2.
US08940881B2
The present invention provides a method for producing chitin nanofibers, which includes the steps of deproteinizing a material derived from a chitin-containing organism by an alkali treatment, deashing a deproteinized integument by an acid treatment, optionally treating the deashed integument under acidic conditions, and then subjecting to a fiber-loosening treatment. The present invention also provides chitin nanofibers obtained by the method, and a composite material and a coating composition each containing the same. The present invention provides a method for producing chitosan nanofibers, which includes, in addition to the above steps, a deacetylation step and chitosan nanofibers obtained by the method, and a composite material and a coating composition each containing the same.
US08940880B2
The present invention concerns a process for the preparation of the compound of formula The compound of formula (1) is the key intermediate in the synthesis of some antibacterial agents of the triamilide class, such as Tulathromycin, useful to treat bacterial and protozoa infections.
US08940876B2
The present disclosure relates to a method for preparing recombinant glycoproteins with high sialic acid content. More specifically, for UDP-GlcNAc 2-epimerase/ManNAc kinase (GNE/MNK) enzyme where point mutation was induced by substituting arginine at position 263 by leucine only or by further substituting arginine at position 266 by glutamine, epimerase activity is constantly maintained, and overexpressed cells thereof experience an increase in intracellular cytidine monophosphate (CMP)-sialic acid content, irrespective of CMP-sialic acid concentration. Particularly, since in an glycoprotein (such as, erythropoietin and thrombopoietin)-producing host cell where point mutationinduced GNE/MNK, human alpha-2,3-sialyltransferase and a CMP-sialic acid transporter gene are simultaneously overexpressed, intracellular content of CMP-sialic acid and sialic acid in glycoprotein increases in cells, overexpression in a host cell producing a sialylated recombinant glycoprotein the three genes above may be useful for preparing glycoprotein with increased sialic acid content.
US08940873B2
The invention relates to batch crystallization methods for crystallizing an anti-hIL-12 antibody that allows the production of the antibody on an industrial scale, antibody crystals obtained according to the methods, compositions containing the crystals, and methods of using the crystals and the compositions.
US08940872B2
The present invention provides an antibody that specifically binds to an abnormal TDP-43 protein aggregate, an agent comprising the antibody for detecting a TDP-43 proteinopathy lesion, and a method for detecting or diagnosing a TDP-43 proteinopathy lesion by using the antibody.
US08940868B2
The invention is based on the discovery of a potent growth factor delivery system by creating a fusion polypeptide that includes two portions: (i) keratinocyte growth factor protein, and (ii) an elastin-like peptide. This chimera can be administered directly to a wound site, accelerating recovery.
US08940866B2
Provided herein are compositions useful in detecting degradative enzymes and biomolecules in bodily fluid samples.
US08940864B2
Provided are constrained peptides that inhibit HIV assembly. Pharmaceutical compositions comprising the above peptides are also provided. Additionally provided are methods of inhibiting replication of a capsid-containing virus in a cell. Also provided are methods of treating a mammal infected with a capsid-containing virus. Further provided are methods of treating a mammal at risk for infection with a capsid-containing virus. Methods of making the above peptides are additionally provided, as are uses of the above peptides and pharmaceutical compositions.
US08940863B2
It is an object of the present invention to provide a substance usable as an anticancer agent or DDS, which has intracellular stability, which is capable of evading side effects from functional disorder with respect to normal cells, or which has instantaneous effect. The inventors developed a novel chimeric peptide targeting cancer cells which overexpress EGFR or the like using a binding peptide such as a peptide sequence binding to EGFR, and a lytic peptide sequence, thereby solving such an object. Particularly, by using a chimeric peptide including an EGF receptor-binding peptide or the like and a cytotoxic peptide, this object was solved.
US08940854B2
A curable formaldehyde-free binding composition for use with fiberglass is provided. Such curable composition comprises an aldehyde or ketone and an amine salt of an inorganic acid. The composition when applied to fiberglass is cured to form a water-insoluble binder which exhibits good adhesion to glass. In a preferred embodiment the composition when applied to fiberglass provides a sufficient blackness required in facer products.
US08940852B2
The present invention is a method for manufacturing a reactive polysiloxane solution, the method comprising: a condensation process for hydrolyzing and copolycondensing a starting compound containing an organosilicon compound having a reactive functional group selected from a (meth)acryloyl group and an oxetanyl group, and also having a siloxane bond-forming group to synthetize a reactive polysiloxane represented by general formula (1); a dissolution process for dissolving the obtained reactive polysiloxane in an organic solvent for water washing; and a washing process for bringing the obtained organic solution and water in contact with each other to remove the water layer from the mixed liquid. The organic solvent for water washing that is used is a compound (e.g., propylene glycol mono butyl ether, 1-pentanol) including a hydroxyl group, having a boiling point at 1 atm of 110° C.-200° C., and a solubility of 10 g or less in 100 g of water at 20° C.
US08940850B2
An energy storage device comprises a capacitor having a dielectric between opposite electrodes and a nonconductive coating between at least one electrode and the dielectric. The nonconductive coating allows for much higher voltages to be employed than in traditional EDLCs, which significantly increases energy stored in the capacitor. Viscosity of the dielectric material may be increased or decreased in a controlled manner, such as in response to an applied external stimulus, to control discharge and storage for extended periods of time.
US08940845B2
The invention provides a novel method for producing a water-absorbent resin comprising: subjecting at least one water-soluble ethylenic unsaturated monomer to reversed-phase suspension polymerization in a petroleum hydrocarbon dispersion medium, the reversed-phase suspension polymerization being conducted using a 0.00005 to 0.00016 mole of water-soluble azo initiator for radical polymerization per mole of the water-soluble ethylenic unsaturated monomer in the presence of 0.000015 to 0.00015 mole of hypophosphorous compound per mole of the water-soluble ethylenic unsaturated monomer. According to the method, the environmental impact can be lessened by reducing the amount of petroleum hydrocarbon dispersion medium released to the outside of the system, and the method makes it possible to obtain a water-absorbent resin having a high water-retention capacity and water-absorption capacity under a load, and a small content of water soluble component at the same time.
US08940843B2
The present invention relates the use of a pump in a loop reactor for the production of polyethylene, as well as a reactor comprising such pump and methods for producing polyolefin by means of such reactor. The pump according to the invention is characterized in that it is an axial flow impeller circulation pump, wherein the impeller comprises 6 blades and wherein the pump is fixed on a spring supported frame. Use of the pump according to the present invention allows for preparation of homogeneous polyethylene products that meet high quality standards from the complicated ethylene polymerization mixtures while at the same time being produced with low energy consumption.
US08940835B2
Provided is a thermoplastic elastomer composition that can be suitably used for the inner liners of pneumatic tires and exhibits high air barrier properties and high fatigue durability. The present invention is a thermoplastic elastomer composition comprising a thermoplastic resin composition and a rubber composition dispersed in the thermoplastic resin composition, wherein the thermoplastic resin composition comprises a polyamide and an ethylene-vinyl alcohol copolymer or a poly(vinyl alcohol), the rubber composition comprises a halogenated isoolefin-p-alkylstyrene copolymer and is cross inked. The thermoplastic resin composition preferably comprises 1 to 25% by weight of the ethylene-vinyl alcohol copolymer or the poly(vinyl alcohol). The thermoplastic elastomer composition preferably comprises 100 parts by weight of the thermoplastic resin composition and 80 to 200 parts by weight of the halogenated isoolefin-p-alkylstyrene copolymer.
US08940826B2
Described are polymer compositions that include lattices (e.g., polymer emulsions or suspensions in an aqueous phase) and that contain a gloss reducing agent and that are useful in various finish compositions such as in floor care compositions.
US08940821B2
An inkjet ink composition comprising water, and at least one water-dispersible polyurethane/urea polymer having at least a first soft segment formed from a polyol prepolymer and at least a second soft segment formed from a polyamine prepolymer, wherein the polyol prepolymer forms urethane bonds in the polyurethane/urea and the polyamine prepolymer forms urea bonds in the polyurethane/urea, and further wherein at least about 4% by weight of the combined soft segments is formed by polyamine prepolymers that form urea bonds in the polyurethane/urea polymer.
US08940817B2
A method for preparing an oxalate of one or more actinides for processing and recycling nuclear fuel, comprising: the precipitation of said actinide or the coprecipitation of said actinides in the form of oxalate particles by bringing into contact an aqueous solution containing the actinide(s) with an aqueous solution of oxalic acid or of an oxalic acid salt; and the collection of the resulting oxalate particles; characterized in that the precipitation or coprecipitation is carried out in fluidized bed.
US08940811B2
A free radical curable liquid for inkjet printing of food packaging materials includes no initiator or otherwise one or more initiators selected from the group consisting of non-polymeric di- or multifunctional initiators, oligomeric initiators, polymeric initiators, and polymerizable initiators; wherein the polymerizable composition of the liquid consists of: a) 25-100 wt % of one or more polymerizable compounds A having at least one acrylate group G1 and at least one second ethylenically unsaturated polymerizable functional group G2 different from the group G1; b) 0-55 wt % of one or more polymerizable compounds B selected from the group consisting of monofunctional acrylates and difunctional acrylates; and c) 0-55 wt % of one or more polymerizable compounds C selected from the group consisting of trifunctional acrylates, tetrafunctional acrylates, pentafunctional acrylates and hexafunctional acrylates.
US08940809B2
The present invention provides a process for producing electret fine particles or coarse powder that can be uniformly electrified and exhibits excellent electrophoretic properties.Specifically, the present invention relates to the production processes (1) and (2) below:(1) A process for producing electret fine particles, comprising emulsifying a fluorine-containing material that contains a vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene terpolymer in a liquid that is incompatible with the fluorine-containing material to obtain emulsified particles; and subjecting the emulsified particles to electron ray irradiation, radial ray irradiation, or corona discharge treatment.(2) A process for producing electret coarse powder, comprising subjecting a resin sheet containing a vinylidene fluoride-hexafluoropropylene-tetrafluoroethylene terpolymer to electron ray irradiation, radial ray irradiation, or corona discharge treatment to process the resin sheet into an electret resin sheet; and pulverizing the electret resin sheet.
US08940808B2
Disclosed is a curable coating agent composition which exhibits excellent wear resistance and weather resistance when applied as a coating agent to plastic or other substrates to be used outdoors. The curable coating agent composition comprises 95 to 65 parts by mass of a component (A) comprising an urethane adduct compound having weather resistance, 5 to 35 parts by mass of a component (B) comprising a specific organosilicon compound, 0.1 to 10 parts by mass of a component (C) which is a radical polymerization initiator, 1 to 12 parts by mass of a component (D) which is an ultraviolet ray absorber, and 10 to 1,000 parts by mass of a component (E) which is an organic solvent, with respect to 100 parts by mass of the components (A) and (B) in total.
US08940800B2
Disclosed are polymers of hydroxypropyl methyl cellulose acetate succinate (HPMCAS) and hydroxypropyl methyl cellulose acetate (HPMCA) with unique degrees of substitution of hydroxypropoxy, methoxy, acetyl, and succinoyl groups. When used in making compositions comprising a low-solubility drug and such polymers, the polymers provide enhanced aqueous concentrations and/or improved physical stability.
US08940789B2
A method for producing 4′-demethylnobiletin or 4′-demethyltangeretin including fermenting a skin derived from at least one citrus fruit selected from citrus fruits belonging to section Acrumen in subgenus Metacitrus in genus Citrus or citrus fruits belonging to section Aurantium in subgenus Archicitrus in genus Citrus, or a water extract product thereof using one or more Aspergillus molds selected from Aspergillus kawachii, Aspergillus awamori, Aspergillus oryzae, Aspergillus sojae, Aspergillus saitoi, and Aspergillus usamii to obtain a fermented product.
US08940786B2
Non-aqueous, ethanol-free taxane nanodispersion formulations are provided. Nanodispersion formulations of embodiments of the invention include a taxane, an oil, a non-ionic surfactant, a non-aqueous solvent, and an organic acid component, wherein the organic acid component is soluble in the non-aqueous solvent and the amount by weight of non-ionic surfactant is equal to or greater than the amount by weight of non-aqueous solvent. Also provided are methods of using the nanodispersion formulations, as well as kits that include the nanodispersion formulations. Non-aqueous, ethanol-free docetaxel nanodispersion formulations are provided. Nanodispersion formulations of embodiments of the invention include docetaxel, an oil, a non-ionic surfactant, a non-aqueous solvent, and an organic acid which is soluble in the non-aqueous solvent and is substantially free of any conjugate base. Also provided are methods of using the nanodispersion formulations, as well as kits that include the nanodispersion formulations.
US08940783B2
The present invention relates to a pheophorbide-α conjugate or its salt, solvate or hydrate. The pheophorbide-α conjugate of the present invention exhibiting fluorescence upon its introduction into cells and degradation inhibits the survival of various cancer cells. Especially, the conjugate of pheophorbide-α (1) and doxorubicin shows higher fluorescence intensity at lower pH (cancer environment). Therefore, the present composition for photodynamic therapy (PDT) of cancers is also very useful in detecting cancers. Interestingly, the anticancer effects of the present composition are dually exerted with help of both the photosensitizer and the anticancer drug of the present conjugates.
US08940779B2
Synergistic microbicidal compositions containing N-methyl-1,2-benzisothiazolin-3-one.
US08940774B2
Provided are tris-quaternary ammonium compounds which are modulators of nicotinic acetylcholine receptors. Also provided are methods of using the compounds for modulating the function of a nicotinic acetylcholine receptor, and for the prevention and/or treatment of central nervous system disorders, substance use and/or abuse and/or gastrointestinal tract disorders.
US08940767B2
Grease-like compositions are provided for repelling rodents. The compositions utilize nontoxic mineral, synthetic, or vegetable oil based gels containing silica, clay, urea, polytetrafluoroethylene, or metallic soap thickeners and capsaicin.
US08940761B2
The present invention relates to novel [1,2,4]triazolopyridine compounds with phosphodiesterase inhibitory activity, as well as to their use as therapeutic agents in the treatment of inflammatory diseases and conditions.
US08940752B2
The present invention provides pyrimidinones that modulate the activity of phosphoinositide 3-kinases (PI3Ks) and are useful in the treatment of diseases related to the activity of PI3Ks including, for example, inflammatory disorders, immune-based disorders, cancer, and other diseases.
US08940743B2
The present invention relates to compounds that are fast dissociating dopamine 2 receptor antagonists, processes for preparing these compounds, pharmaceutical compositions comprising these compounds as an active ingredient. The compounds find utility as medicines for treating or preventing central nervous system disorders, for example schizophrenia, by exerting an antipsychotic effect without motor side effects.
US08940739B2
This invention relates to novel compounds of reverse-turn mimetics, having pyrazino-triazinone as a basic framework, and a method of preparing the same, and the use thereof to treat diseases such as cancer, in particular, acute myeloid leukemia.
US08940737B2
Disclosed are compounds which inhibit the activity of anti-apoptotic Bcl-xL proteins, compositions containing the compounds and methods of treating diseases during which is expressed anti-apoptotic Bcl-xL protein.
US08940734B2
The present invention relates to a fused aminodihydrothiazine derivative of formula (I): wherein X is hydrogen or fluorine; A is CH or N; Y is methyl, ethyl, monofluoromethyl, difluoromethyl, trifluoromethyl, difluoroethyl, methoxy, ethoxy, methoxymethyl or —C≡N; and pharmaceutically acceptable salts thereof; which compound has an Aβ production inhibitory effect or a BACE1 inhibitory effect and is useful as a prophylactic or therapeutic agent for a neurodegenerative disease caused by Aβ and typified by Alzheimer-type dementia.
US08940722B2
The invention provides modulators for the orphan nuclear receptor RORγ and methods for treating RORγ mediated diseases by administrating these novel RORγ modulators to a human or a mammal in need thereof. Specifically, the present invention provides compounds of Formula (1) and the enantiomers, diastereomers, tautomers, solvates and pharmaceutically acceptable salts thereof.
US08940721B2
Compositions and methods for treating macular degeneration and other forms of retinal disease whose etiology involves the accumulation of A2E and/or lipofuscin, and, more specifically, for preventing the formation and/or accumulation of A2E are disclosed.
US08940718B2
The disclosure is related to anti-viral compounds, compositions containing such compounds, and therapeutic methods that include the administration of such compounds, as well as to processes and intermediates useful for preparing such compounds.
US08940715B2
The object of the present invention is to provide a lipid-regulating agent or a composition for regulating the amount of lipids comprising the agent. The present invention solves the above object by providing a lipid-regulating agent comprising a cyclic tetrasaccharide and/or its saccharide-derivative(s) and a composition for regulating the amount of lipids comprising the lipid-regulating agent.
US08940712B2
The present invention relates to the identification of a microRNA family, designated miR-29a-c, that is a key regulator of fibrosis in cardiac tissue. The inventors show that members of the miR-29 family are down-regulated in the heart tissue in response to stress, and are up-regulated in heart tissue of mice that are resistant to both stress and fibrosis. Also provided are methods of modulating expression and activity of the miR-29 family of miRNAs as a treatment for fibrotic disease, including cardiac hypertrophy, skeletal muscle fibrosis other fibrosis related diseases and collagen loss-related disease.
US08940691B2
A supramolecular insulin assembly and supramolecular exendin-4 assembly, which is useful as a protein therapeutic agent for the treatment of metabolic disorders particularly diabetes. The supramolecular assemblies disclosed in the present invention consists of insoluble and aggregated oligomers the protein. The invention also provides pharmaceutical compositions comprising the supramolecular assembly.
US08940688B2
The present invention relates to compounds of Formula I, or a pharmaceutically acceptable salt, ester, or prodrug, thereof: which inhibit serine protease activity, particularly the activity of hepatitis c virus (HCV) NS3-NS4A protease. Consequently, the compounds of the present invention interfere with the life cycle of the hepatitis c virus and are also useful as antiviral agents. The present invention further relates to pharmaceutical compositions comprising the aforementioned compounds for administration to a subject suffering from HCV infection. The invention also relates to methods of treating an HCV infection in a subject by administering a pharmaceutical composition comprising the compounds of the present invention.
US08940680B2
Composition in the form of a gel containing at least 35% by weight of water, at least one foaming surfactant chosen from nonionic or amphoteric surfactants, and at least one superabsorbent polymer. The superabsorbent polymer helps to thicken the composition without affecting its cosmetic properties.
US08940674B2
This invention relates to a “high lower alcohol content”(>40% v/v of a C1-4 alcohol) liquid composition able to be either dispensed as a stable foam with the use of non-propellant foam dispensing devices from non-pressurized containers or as an alcohol gel composition which does not use thickener and gelling agents that leave undesirable deposits or a sticky after-feel and that has a final viscosity less than 4,000 cps. The liquid compositions comprise an alcohol, C1-4 (>40% v/v), a fluorosurfactant of at least 0.001% by weight to prepare a foamable composition or from 0-2.0% to prepare a gel-like composition of a final viscosity less than 4,000 cps, 0-10% w/w of additional minor components added to obtain the desired performance (a foamable composition or a gel-like composition with a viscosity less than 4,000 cps), and the balance being purified water.
US08940654B2
A catalyst component for the polymerization of olefins obtained by: (a) reacting in a inert hydrocarbon suspension medium a Mg(OR1)(OR2) compound, in which R1 and R2 are identical or different and are each an alkyl radical having 1 to 10 carbon atoms, with a tetravalent transition metal compound having at least a Metal-halogen bond, used in amounts such that the molar ratio metal/Mg is from 0.05 to 10, thereby obtaining a solid reaction product dispersed in a hydrocarbon slurry, (b) washing the solid reaction product dispersed in a hydrocarbon slurry with a liquid hydrocarbon, (c) contacting the washed solid reaction product obtained in (b) with a tetravalent titanium compound and (d) contacting the product obtained in (c) with an organometallic compound of a metal of group 1, 2 or 13 of the Periodic Table.
US08940635B1
A method for forming a semiconductor structure includes providing a semiconductor substrate and forming a dielectric layer over the semiconductor substrate. An opening is formed in the dielectric layer. A conductive line is formed in the opening, wherein the conductive line has an open void formed therein. A sealing metal layer is formed overlying the conductive line, the dielectric layer, and the open void, wherein the sealing metal layer substantially fills the open void. The sealing metal layer is planarized so that a top surface thereof is substantially level with a top surface of the conductive line. An interconnect feature is formed above the semiconductor substrate, wherein the interconnect feature is electrically coupled with the conductive line and the sealing metal layer-filled open void.
US08940627B2
Vias (holes) are formed in a wafer or a dielectric layer. A low viscosity conductive ink, containing microscopic metal particles, is deposited over the top surface of the wafer to cover the vias. An external force is applied to urge the ink into the vias, including an electrical force, a magnetic force, a centrifugal force, a vacuum, or a suction force for outgassing the air in the vias. Any remaining ink on the surface is removed by a squeegee, spinning, an air knife, or removal of an underlying photoresist layer. The ink in the vias is heated to evaporate the liquid and sinter the remaining metal particles to form a conductive path in the vias. The resulting wafer may be bonded to one or more other wafers and singulated to form a 3-D module.
US08940626B2
A method for fabricating an integrated circuit includes forming a first layer of a workfunction material in a first trench of a plurality of trench structures formed over a silicon substrate, the first trench having a first length and forming a second layer of a workfunction material in a second trench, the second trench having a second length that is longer than the first length. The method further includes depositing a low-resistance fill material onto the integrated circuit to fill any unfilled trenches with the low-resistance fill material and etching the low resistance fill material, the first layer, and the second layer to re-expose a portion of each trench of the plurality of trenches, while leaving a portion of each of the first layer, the second layer, and the low-resistance fill material in place. Still further, the method includes depositing a gate fill material into each re-exposed trench portion.
US08940620B2
A composite wafer includes a first substrate having a first vertical thickness and a top surface, the top surface being prepared in a state for subsequent semiconductor material epitaxial deposition. A carrier substrate is disposed beneath the first substrate. The carrier substrate has a second vertical thickness greater than the first vertical thickness. An interlayer bonds the first substrate to the carrier substrate.
US08940617B2
A structure and method is provided for fabricating isolated capacitors. The method includes simultaneously forming a plurality of deep trenches and one or more isolation trenches surrounding a group or array of the plurality of deep trenches through a SOI and doped poly layer, to an underlying insulator layer. The method further includes lining the plurality of deep trenches and one or more isolation trenches with an insulator material. The method further includes filling the plurality of deep trenches and one or more isolation trenches with a conductive material on the insulator material. The deep trenches form deep trench capacitors and the one or more isolation trenches form one or more isolation plates that isolate at least one group or array of the deep trench capacitors from another group or array of the deep trench capacitors.
US08940608B2
Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing a semiconductor substrate including a first region of a first doping type, a second region of the first doping type spaced from the first region, a drift region of the first doping type positioned between the first region and the second region, and regions of the opposite doping type. A mask covering both the drift region and the regions of the opposite doping type is formed. Then, a source/drain ion implantation is performed into the first region and the second region. The mask prevents the drift region and the regions of the opposite doping type from receiving the source/drain ion implantation.
US08940606B2
The present invention provides a trench type power transistor device including a substrate, an epitaxial layer, a doped diffusion region, a doped source region, and a gate structure. The substrate, the doped diffusion region, and the doped source region have a first conductivity type, and the substrate has an active region and a termination region. The epitaxial layer is disposed on the substrate, and has a second conductivity type. The epitaxial layer has a through hole disposed in the active region. The doped diffusion region is disposed in the epitaxial layer at a side of the through hole, and is in contact with the substrate. The doped source region is disposed in the epitaxial layer disposed right on the doped diffusion region, and the gate structure is disposed in the through hole between the doped diffusion region and the doped source region.
US08940598B2
A method for adding a low TCR resistor to a baseline CMOS manufacturing flow. A method of forming a low TCR resistor in a CMOS manufacturing flow. A method of forming an n-type and a p-type transistor with a low TCR resistor in a CMOS manufacturing flow.
US08940595B2
A faceted intrinsic buffer semiconductor material is deposited on sidewalls of a source trench and a drain trench by selective epitaxy. A facet adjoins each edge at which an outer sidewall of a gate spacer adjoins a sidewall of the source trench or the drain trench. A doped semiconductor material is subsequently deposited to fill the source trench and the drain trench. The doped semiconductor material can be deposited such that the facets of the intrinsic buffer semiconductor material are extended and inner sidewalls of the deposited doped semiconductor material merges in each of the source trench and the drain trench. The doped semiconductor material can subsequently grow upward. Faceted intrinsic buffer semiconductor material portions allow greater outdiffusion of dopants near faceted corners while suppressing diffusion of dopants in regions of uniform width, thereby suppressing short channel effects.
US08940591B2
A method for fabricating a semiconductor device includes forming a gate stack on an active region of a silicon-on-insulator substrate. The active region is within a semiconductor layer and is doped with an p-type dopant. A gate spacer is formed surrounding the gate stack. A first trench is formed in a region reserved for a source region and a second trench is formed in a region reserved for a drain region. The first and second trenches are formed while maintaining exposed the region reserved for the source region and the region reserved for the drain region. Silicon germanium is epitaxially grown within the first trench and the second trench while maintaining exposed the regions reserved for the source and drain regions, respectively.
US08940585B2
The present disclosure provides semiconductor packaging techniques that form a substrate using metal and insulating materials. The substrate includes a first surface that is bonded to a semiconductor device and a second surface that is bonded to a printed circuit board. The substrate is formed using several techniques that minimize the amount of mask levels used to form the substrate. For example, a metal substrate is patterned to form a three dimensional pattern on the surface. A dielectric material is deposited on the three dimensional pattern. Using several patterning and polishing embodiments described herein, the metal/dielectric substrate is patterned and polished to form a substantially flush surface that is bonded to the semiconductor device. In one embodiment, the top surface of the metal/dielectric substrate is patterned to expose the underlying metal substrate and the bottom surface of the metal substrate is polished to be substantially flush with the dielectric material.
US08940577B2
A programmable metallization cell (PMC) that includes an active electrode; a nanoporous layer disposed on the active electrode, the nanoporous layer comprising a plurality of nanopores and a dielectric material; and an inert electrode disposed on the nanoporous layer. Other embodiments include forming the active electrode from silver iodide, copper iodide, silver sulfide, copper sulfide, silver selenide, or copper selenide and applying a positive bias to the active electrode that causes silver or copper to migrate into the nanopores. Methods of formation are also disclosed.
US08940575B2
There is provided a method of producing a semiconductor device. The method includes the steps of: forming a first hard mask having an opening above a substrate; forming a sacrificial film above a side surface of the opening of the first hard mask; forming a second hard mask in the opening having the sacrificial film above the side surface; removing the sacrificial film after the second hard mask is formed; ion implanting a first conductivity-type impurity through the first hard mask; and ion implanting a second conductivity-type impurity through the first and second hard masks.
US08940571B2
P-type semiconductor sheets and n-type semiconductor sheets formed by mixing a powder of semiconductor material, a binder resin, a plasticizer, and a surfactant are prepared. In addition, separator sheets formed by mixing a resin such as PMMA and a plasticizer are prepared. Through holes are formed in each of the separator sheets and then filled with a conductive material. Thereafter, the p-type semiconductor sheet, the separator sheet, the n-type semiconductor sheet and the separator sheet are stacked. The resultant laminated body is cut into a predetermined size and then subjected to a baking process.
US08940569B2
A dual gate extremely thin semiconductor-on-insulator transistor with asymmetric gate dielectrics is provided. This structure can improve the sensor detection limit and also relieve the drift effects. Detection is performed at a constant current mode while the species will be detected at a gate electrode with a thin equivalent oxide thickness (EOT) and the gate bias will be applied to the second gate electrode with thicker EOT to maintain current flow through the transistor. As a result, a small change in the charge on the first electrode with the thin EOT will be translated into a larger voltage on the gate electrode with the thick EOT to sustain the current flow through the transistor. This allows a reduction of the sensor dimension and therefore an increase in the array size. The dual gate structure further includes cavities, i.e., microwell arrays, for chemical sensing.
US08940568B2
Methods of fabricating a device having laterally patterned first and second sub-devices, such as subpixels of an OLED, are provided. Exemplary methods may include depositing via organic vapor jet printing (OVJP) a first organic layer of the first sub-device and a first organic layer of the second sub-device. The first organic layer of the first sub-device and the first organic layer of the second sub-device are both the same type of layer, but have different thicknesses. The type of layer is selected from an ETL, an HTL, an HIL, a spacer and a capping layer.
US08940565B1
A method of manufacturing a thin film transistor array substrate includes providing a plurality of gate lines and a plurality of data lines on a first substrate, providing an organic layer on the gate lines and the data lines, providing a first electrode on the organic layer, providing a passivation layer on the first electrode, providing a second electrode on the passivation layer, providing a first cover layer on the second electrode to cover the second electrode, providing a plurality of photosensitive layer patterns on the first cover layer, providing a plurality of first cutout patterns in the first cover layer and a plurality of second cutout patterns in the second electrode using the photosensitive layer patterns as an etch mask, and providing a plurality of third cutout patterns in the passivation layer using the first cover layer as an etch mask.
US08940563B2
A method for manufacturing an optoelectronic module is proposed. The method comprises the following steps: providing a top cover with a reflective surface. Then, a light-guiding structure is formed. A mounting device is provided. Next, an optoelectronic device is formed on the mounting device with a first precision. A control chip is formed on the mounting device with a second precision different from the first precision. The top cover combines with the mounting device, wherein the light-guiding structure is between the top cover and the mounting device, and the optoelectronic device faces the reflective surface.
US08940559B2
In an embodiment, a method of fabricating an integrated orifice plate and cap structure includes forming an orifice bore on the front side of a product wafer, coating side walls of the orifice bore with a protective material, grinding the product wafer from its back side to a final thickness, forming a first hardmask for subsequent cavity formation, forming a second hardmask over the first hardmask for subsequent descender formation, forming a softmask over the second hardmask for subsequent convergent bore formation, etching a latent convergent bore using the softmask as an etch delineation feature, etching a descender using the second hardmask as an etch delineation feature, and anisotropic etching of convergent bore walls and cavities using the first hardmask as an etch delineation feature.
US08940556B2
A apparatus and method for manufacturing a photovoltaic module includes components for heating the module and applying an electrical bias to the module to improve photovoltaic module performance and manufacture multiple photovoltaic modules with similar performance.
US08940542B2
A sensor for detecting and/or quantifying the amount of analyte in a sample, the sensor including: a sensing region; and a barrier layer including a reactive oxygen species (ROS)-quenching, analyte-permeable membrane having an ROS-quenching agent adsorbed to the membrane; wherein the sensor is adapted so that the sample enters the sensing region of the sensor through the barrier layer.
US08940541B2
The present invention discloses a sample sorter system adapted to receive and sort samples according to predetermined criteria. The sample sorter system comprises a receptacle that is adapted to receive and retain fluid and samples. The receptacle is operatively coupled with a drive and with a power source such that actuation of the drive causes the rotation of at least one circular component, which in turn causes the development of a flow regime in the receptacle such that the samples suspended in the fluid are conveyable along a closed path to at least one sample handling site that are positioned along said closed path.
US08940540B2
A portable, hand-held glucose testing device includes a housing configured to accommodate a plurality of test sensors in a stacked arrangement and having a wall with an opening defined therein. A plurality of packaged test sensors is stacked in alignment with one another within the housing. Each of the test sensors is packaged within a blister package. The blister package includes a blister package housing and a cover foil overlying a surface of the blister package housing and the test sensor. A drive slide is configured to displace one of the plurality of packaged test sensors out of alignment with other packaged test sensors. A knife mechanism is configured to pierce through the cover foil, and to engage and urge the test sensor to extend through the opening for receiving a sample. A meter contact is configured to engage the test sensor when the test sensor extends through the opening.
US08940534B2
The present invention relates to immortalized avian cell lines suitable for production of biologicals or viruses for vaccination. In particular, the cell lines are derived from primary cells which are transformed with at least two viral or cellular genes, one of which causes cell cycle progression whereas the other interferes with innate protective mechanisms of the cell induced by dysregulated replication. The invention moreover relates to the production of said immortalized cell lines and their use for producing biologicals or viruses for vaccination.
US08940531B2
A system for culturing and recovering micro algae comprises a photo-bioreactor, a floatation separator, a centrifugal separator, and a micro bubble generator. The photo-bioreactor unit is configured to culture micro algae by a photochemical reaction to produce a micro algae precipitate. The precipitated micro algae is separated by the floatation separator. The separated micro algae is concentrated by the centrifugal separator. The micro bubble generator generates process water containing micro carbon dioxide bubbles and supplies the generated process water to the photo-bioreactor unit and the floatation separator. With this system, micro algae can be cultured and recovered in a simpler and more cost-effective manner.
US08940517B2
The disclosure relates to the development of improved methods for quantifying antigen in a vaccine composition in the absence of available antigen standards. More specifically, the disclosure provides fast and robust methods of separating antigens from vaccine compositions, comprising the steps of solubilizing antigen without detergent and without alkylation, using acidification to prevent antigen subtypes from binding again, isolating antigen subtypes with chromatography, and quantifying the eluted antigen with amino acid analysis. The methods of the disclosure are applicable for use with a variety of antigens, thereby providing an improved method in the art of vaccine manufacturing to date.
US08940514B2
A thioesterase comprising an amino acid sequence set forth in SEQ ID NO: 1, a thioesterase gene encoding the thioesterase, a transformant comprising the gene, and a method of producing fatty acids or lipids using the transformant.
US08940506B2
The disclosure provides method and composition utilizing fluorescent amino acids and endogenous fluorescent proteins comprising a moiety capable of undergoing FRET. The methods and compositions of the disclosure are useful in analyzing protein structure and function, and screening molecular inhibitors.
US08940504B2
The present invention relates to methods and means for making Vitamin K-dependent protein compositions which are devoid or substantially devoid of protein contaminants. In particular, methods and means useful for the reduction or elimination of protein contaminants also being Vitamin K-dependent proteins are described.
US08940493B2
Methods for the detection, enumeration and analysis of circulating tumor cells expressing insulin-like growth factor-1 receptors (IGF-1R) are disclosed. These methods are useful for cancer screening and staging, development of treatment regimens, and for monitoring for treatment responses, cancer recurrence or the like. Test kits that facilitate the detection, enumeration and analysis of such circulating tumor cells are also provided.
US08940486B2
Provided are oligonucleotides that are capable of detecting KRAS and PIK3CA mutations in both cancer patients and healthy individuals with high specificity in kPCR assays. When the oligonucleotides are used as forward primers in conjunction with a defined genotyping algorithm spreadsheet, the primers are capable of enhancing detection of KRAS codon 12, 13, and 61 and PIK3CA codon 542, 545, and 1047 single nucleotide polymorphisms (SNPs) in a background of wild-type sequences. The oligonucleotides of the present invention are also capable of preventing pseudogene amplification when the oligonucleotides are hybridized as reverse primers or detection probes to the mismatch sequences.
US08940478B2
Methods for forming cell arrays of multiple cell samples arranged substantially in a monolayer on a single substrate particularly suited for diagnostic analysis are disclosed. The cell arrays are formed with a high-speed dispensing apparatus capable of dispensing small volumes in precise, complex patterns. Also disclosed are substrates upon which cell arrays may be formed, and methods for conducting diagnostic analyzes on the formed cell arrays.
US08940476B2
Provided is a pattern forming method that is excellent in resolving power such as pre-bridging dimension, a roughness performance such as line edge roughness, and development time dependency, and an actinic-ray-sensitive or radiation-sensitive resin composition and a resist film used for the pattern forming method.The pattern forming method includes (1) forming a film using an actinic-ray-sensitive or radiation-sensitive resin composition that contains a resin (A) and a compound (B) which has a polymerizable group and generates an acid by being irradiated with actinic rays or radiations; (2) exposing the film; and (3) developing the exposed film using a developer that contains an organic solvent, wherein a pattern formed in this method is a negative pattern.
US08940474B2
A silicate-free alkaline aqueous developer composition has a pH of at least 12 and comprises a hydroxide alkali agent, a metal cation M2+ selected from barium, calcium, strontium, and zinc cations, a chelating agent for the metal cation, and an alkali metal salt that is different than the other components. These developer compositions can be used to process imaged positive-working lithographic printing plate precursors to prepare lithographic printing plates.
US08940465B2
An undercoat layer of an electrophotographic photosensitive member contains a polymerized product of a composition that contains an isocyanate compound having a specific structure, a resin having a specific structure, and an electron transporting substance having a specific structure.
US08940461B2
A method of coating carbon based electrodes and thick electrodes without mud-cracking is described. The electrode ink is deposited on a decal substrate, and transferred to a hot press before the electrode ink is completely dried. The partially dried electrode ink is hot pressed to the membrane to form a membrane electrode assembly. A membrane electrode assembly including a polymer membrane; and a pair of crack-free electrode layers on opposite sides of the polymer membrane, each of the pair of electrode layers having a thickness of at least about 50 μm is also described.
US08940459B2
An alkaline fuel cell electrode catalyst includes a first catalyst particle that contains at least one of iron (Fe), cobalt (Co) and nickel (Ni), a second catalyst particle that contains at least one of platinum (Pt) and ruthenium (Ru), and a carrier for supporting the first catalyst particle and the second catalyst particle.
US08940458B2
The present invention discloses a fuel supply for a fuel cell, the fuel cell including a liquid storage area that includes a liquid reactant, a reaction area that includes a solid reactant, wherein the liquid reactant is pumped into the reaction area such that the liquid reactant reacts with the solid reactant to produce reaction components, a product collection area that receives the reaction components, a barrier, and a container with an interior volume that substantially encloses the reaction area, liquid storage area, product collection area. The barrier separates and defines several of the aforementioned areas, and moves to simultaneously increase the product collector area and decrease the liquid storage area as the liquid reactant is pumped from the liquid storage area and the reaction components are transferred into the product collection area.
US08940447B2
An oxygen cell capable of minimizing overvoltage increases is provided. An oxygen cell 1 comprises a positive electrode 2 that uses oxygen as an active material, a negative electrode 3 that uses metallic lithium as an active material, and an electrolyte layer 4 sandwiched between the positive electrode 2 and the negative electrode 3, wherein the positive electrode 2 contains a lithium compound.
US08940444B2
Hybrid radical energy storage devices, such as batteries or electrochemical devices, and methods of use and making are disclosed. Also described herein are electrodes and electrolytes useful in energy storage devices, for example, radical polymer cathode materials and electrolytes for use in organic radical batteries.
US08940426B2
A device stores electric energy, in particular for the traction supply of a rail vehicle. The device has a plurality of chargeable storage cells with cell poles, a cooling body that is in thermal contact with the storage cells, and a plurality of bridge members, by way of which two of the plurality of storage cells are in electric contact. Accordingly, at least some of the bridge members contact the storage cells on the sides thereof facing the cooling body. A bridge member contains a connecting web having two recesses and two connecting parts, each being introduced into one of the recesses. Each connecting part is connected to a cell pole of a storage cell to be contacted. The connecting parts are fixed non-rotatably and non-displaceably in a connecting web by a releasable tensioning device. Thus the efficiency and service life of the energy storage device can be increased by reducing the thermal resistance between the storage cells and the cooling body.
US08940425B2
Plate assemblies for a heat exchanger suitable for use in a battery assembly are provided. A plate assembly can include a first substantially planar member having a first side, a second side, a first opening, and a second opening. A first conduit extends from the first opening on the first side and a second conduit extends from the second opening on the first side. A first spacer extends from the second side. Some plate assemblies include a second substantially planar member having a third side, a fourth side, a third opening, and a fourth opening. The third side faces the first side, the first conduit connects the first opening on the first side and the third opening on the third side, and the second conduit connects the second opening on the first side and the fourth opening on the third side. A second spacer extends from the fourth side.
US08940424B2
The accumulator assembly comprises a plurality of electrical energy accumulator elements 12 each comprising connecting electrodes 18, 20, assembly means 22, 24, 50, 52, 54 linking said electrodes, a connector 35 for connecting an external component to the assembly, and a connector support 67. The support 67 comprises a mounting base 64 borne by the assembly means and a fixing lug 65 supporting the connector and configured in such a way as to allow a movement of the connector relative to the mounting base in response to an external stress exerted on said connector and/or on the fixing lug.