The invention relates to a high-sensitivity photoelectric detector, comprising: a chip made of silicon substrate and on-silicon substrate light response layer, where the light response layer is a doped barium titanate film layer epitaxially grown on the silicon substrate; first electrode is arranged on the doped barium titanate film, second electrode is arranged on the bottom surface of the silicon substrate, contacting the air, and each electrode is connected with one end of an electrode lead, and the other end of the electrode lead is a signal output end, and two ends of a resistor are connected with the signal output ends of the two electrode leads, respectively. And it is a photovoltaic photoelectric detector, and directly generates voltage signal without any added auxiliary power supply and electronic circuit, after irradiated under light. And its response wave band is from UV to far infrared, and front edge and half width of photovoltaic pulse generated by laser pulse are -1ns and -2ns, respectively.