The invention discloses a ZnO:Bi photoelectric thin film and the preparation method thereof. Analytically pure Bi2O3 powder is taken as doping material, and the nanometer zinc oxide with 99.95 percentof fineness is taken as main body material, the incorporation amount of the Bi2O3 powder is 1 to 5 percent of total weight, mixture is mixed by ball milling for 360 to 720 minutes, and is extruded for 3 to 15 minutes under the pressure intensity of 30 to 60 MPa for molding, the heat preservation and the sintering are performed for 60 to 360 minutes under normal pressure at 1200 to 1400 DEG C inthe air, and ZnO:Bi ceramic target material is prepared. The film is prepared by adopting a radio frequency magnetic controlled sputtering method under the condition that the degree of vacuum is 8.0 multiplied by 10 <-5> Pa and the gas pressure intensity after the pure argon is filled is 1 to 3 Pa, and then the film is prepared by the annealing heat treatment under the vacuum circumstance with thevacuum degree less than or equal to 0.1 Pa, the expression formula is ZnO:Bi, and the weight ratios of the use amount of all raw materials are ZnO 95-99 percent and Bi2O3 1-5 percent. The photoelectric thin film has good photoelectric performance, the specific resistance reaches 9.0 multiplied by 10<-4> ohms*cm, the transmissibility of visible light reaches above 85 percent, the transmissibilityof an ultraviolet band with the wavelength lower than 370 nm is expressed as the cut off state, the ZnO:Bi photoelectric thin film has good ultraviolet stealth effect, and the purity of the raw materials adopted is low, the process is simple, and the cost is low.