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发明公开
CN101013687A 具有熔丝元件的半导体器件和切断熔丝元件的方法 无效 - 撤回

具有熔丝元件的半导体器件和切断熔丝元件的方法
摘要：
一种半导体器件包括下电极、上电极、以及与下电极和上电极相连的熔丝元件。熔丝元件的高度大于要照射的激光束的焦点深度。熔丝元件的直径小于激光束的衍射极限。因此，在本发明中使用沿垂直方向较长的熔丝元件，从而可以高效地吸收激光束能量。可以使用具有较小焦点深度的光学系统来切断熔丝元件，使位于熔丝元件上面或下面的组件受到的损坏非常小。由此，可以切断熔丝元件而不会破坏钝化膜。
摘要（英）：

A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. The height of the fuse element is greater than the depth of focus of a laser beam to be irradiated. The diameter of the fuse element is smaller than the diffraction limit of the laser beam. Thus, in the present invention, a vertically long fuse element is used, so that it is possible to efficiently absorb the energy of the laser beam. It is possible to cut the fuse element by using an optical system having a small depth of focus, so that the damage imposed on a member located above or below the fuse element is very small. As a result, the fuse element can be without destructing the passivation film.

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