利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN101015066A 热电子晶体管 无效 - 撤回

热电子晶体管
摘要：
热电子晶体管包括：发射极、基极和集电极，和置于发射极与基极之间并用于在二者之间进行电子传输的第一隧穿结构。第一隧穿结构至少包括：第一非晶绝缘层和与其不同的第二绝缘层，使得所述电子的传输包括利用隧穿的传输。所述晶体管进一步包括置于基极与集电极之间的第二隧穿结构。第二隧穿结构用于利用弹道传输将基极与集电极之间的前述的电子中的一部分的传输，使得所述部分的电子在集电极处被收集。还公开了用于在薄膜晶体管中的界面处减少电子反射的相应的方法。
摘要（英）：

A hot electron transistor includes an emitter electrode, a base electrode, a collector electrode, and a first tunneling structure disposed and serving as a transport of electrons between the emitter and base electrodes. The first tunneling structure includes at least a first amorphous insulating layer and a different, second insulating layer such that the transport of electrons includes transport by means of tunneling. The transistor further includes a second tunneling structure disposed between the base and collector electrodes. The second tunneling structure serves as a transport of at least a portion of the previously mentioned electrons between the base and collector electrodes by means of ballistic transport such that the portion of the electrons is collected at the collector electrode. An associated method for reducing electron reflection at interfaces in a thin-film transistor is also disclosed.

0/0