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CN101109724B 一种检测多量子阱发光二极管内部量子点密度的方法 失效 - 权利终止

一种检测多量子阱发光二极管内部量子点密度的方法
摘要：
本发明提供一种检测InGaN/GaN多量子阱发光二极管内部量子点密度大小的方法。由于InGaN/GaN多量子阱发光二极管为InGaN量子点发光，那么，其内部量子点密度的大小就决定了其发光性能的优劣。本发明根据InGaN/GaN多量子阱发光二极管开启电压随其内部量子点密度增大而逐渐增大的变化关系，通过测量其开启电压的大小来判定其内部量子点密度的大小。在保证电极为欧姆接触的情况下，发光二极管的开启电压越大，其内部量子点密度也就越高。本发明可以简单方便的确定InGaN/GaN多量子阱发光二极管内部量子点密度的相对大小，而且不会造成浪费，对于寻找最优化的生长条件，提高发光二极管的发光效率和节约成本具有重要意义。
摘要（英）：

The invention provides a method for detecting the density of the quantum points in an InGaN/GaN multi-quantum trap LED. As the InGaN/GaN multi-quantum trap LED lights by InGaN quantum points, the density of the quantum points in the LED determines the lighting performance. The invention judges the density of the quantum points in the LED by measuring the open voltage based on the relationship thatthe open voltage of InGaN/GaN multi-quantum trap LED increases with the density of the quantum points in the LED. With Ohm contact between electrodes, the higher the open voltage of the LED, the higher the density of the quantum points in the LED will be. The invention can easily and conveniently determine the relative size of the density of the quantum points in the InGaN/GaN multi-quantum trapLED, and will not result in waste; is of important meaning for looking for an optimal growth conditions, improving the lighting efficiency and saving cost.

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