The utility model relates to a method to precipitate amorphous zinc sulfide thin film under the ambient temperature, which is characterized in that the method integrates an ultrasonic irradiation technology and continuous absorption and reaction method of ion layer, the process of the thin film deposition comprises a plurality of cycles, each cycle comprises four steps: (1) absorption of the anion precursor solution; (2) ultrasonic irradiation on the substrate; (3) reaction and absorption of the cation precursor solution; (4) ultrasonic irradiation on the substrate. The anion precursor is prepared by mixture of the inorganic salt of the zinc or the organic acetate with the complexing agent, the complexing agent can be ethylenediamine or ammonia water; the cation precursor is made of the inorganic sulfide, such as sodium sulfide; the substrate is made of either the ordinary glass, or the quartz glass, or the ITO conductive glass, or the monocrystalline silicon, or the sapphire. The utility model has advantages that the ZnS film layer is made of the compact ZnS nanometer particles, the size of the particle is 10 to 30 nm; the heating or expensive vacuum equipment is not required dueto simple processing method adopted and low cost. The method is applicable to the mass production.