The invention discloses a semiconductor oxide gas sensor component preparation method. (1)The invention cleans and dries a substrate printed with heating electrode and a measuring electrode, lays the substrate into water or alcohol solution with the soluble metal salts soaking, then dries, heats and decomposes the substrate, finally forms the seed crystal; (2) matches the water or the alcoholic solution with the homogeneous metallic ion soluble salt, adopts the same solvent dispensing precipitant solution, drips the solvent into the water or the alcoholic solution and mixes the solution evenly, then hangs and soaks the substrate in the solution, seals and heats up;(3) removes, washes, and sinters the substrate to obtain the gas sensor component. The traditional technique preparation of materials and components produced are separated. The invention utilizes simple technique preparing the high-sensitivity nanometer semiconductor oxide gas sensor component to overcome the shortcomings, and realizes the effective regulation to the surface sensitive components microstructure. The preparation method has the advantages that low requirements to the production equipment and environment, energy conservation, low cost, and mass production, therefore the invention is expected to be widely applied in the field of gas sensor.