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发明授权
CN101241312B 一种光刻机成像质量现场测量方法 有权

一种光刻机成像质量现场测量方法
摘要：
本发明公开了一种光刻机成像质量现场测量方法，通过获得标记在不同照明设置条件下的成像位置相对偏差即套刻误差，利用数学模型拟合计算投影物镜波像差。标记成像相对误差的获取可以不依赖于对准系统，减少了对准系统测量标记位置引入的误差，提高了测试精度。
摘要（英）：

The invention discloses a field measurement method for photo-etching machine imaging quality. Projection objective wave aberration is fitted and calculated using a mathematical model by obtaining imaging device relative deviation, namely, alignment error marked in different illumination setting condition. The mark imaging relative error is obtained independent of the alignment system, so that error induced by the alignment system measurement mark position is reduced and measurement precision is increased.

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