利索-全球专利检索

  1. 登录
  2. 注册
发明公开
CN101346808A 底栅电极薄膜晶体管 失效 - 权利终止

底栅电极薄膜晶体管
摘要：
本发明提供了晶体管，包括：基板；栅电极；不位于基板和栅电极之间的半导体材料、与半导体材料接触的源电极、与半导体材料接的漏电极、和与栅电极和半导体材料接触的介电材料；其中所述半导体材料包括：如本文描述的1－99.9重量％的在1KHz时介电常数大于3.3的所述聚合物、0.1－99重量％的官能团化并五苯化合物。
摘要（英）：

A transistor is provided comprising: a substrate; a gate electrode; a semiconducting material not located between the substrate and the gate electrode; a source electrode in contact with the semiconducting material; a drain electrode in contact with the semiconducting material; and a dielectric material in contact with the gate electrode and the semiconducting material; wherein the semiconducting material comprises: 1-99.9% by weight of a polymer having a dielectric constant at IkHz of greater than 3.3; 0.1-99% by weight of a functionalized pentacene compound as described herein.

公开/授权文献
0/0