A surface-emission laser diode (100) of a vertical-cavity surface-emission laser structure includes a substrate (101) and a mesa structure formed on the substrate, the mesa structure including therein a current confinement structure, wherein the current confinement structure includes a conductive current confinement region (108A) and an insulation region surrounding the conductive current confinement region, the insulation region being an oxide of a semiconductor material forming the conductive current confinement region, and wherein a center of the current confinement region is offset from acenter of the mesa structure in a plane perpendicular to a laser oscillation direction.