A self-revolving transfer device and a preparation method thereof are disclosed, belonging to the technical field of self-revolving transportation devices. The invention is characterized in that firstly, a bottom electrode is made on a silicon dioxide substrate, then an insulating layer and a mask metal are grown; after that a nano-scale restricting structure which has small top and big bottom communicated with the bottom electrode is formed on the insulating layer through electron beam lithography, ion beam etching and reactive ion etching; then a ferromagnetic metal film, a non-ferromagnetic metal film and a second ferromagnetic metal film are sequentially deposited on the nano-scale restricting structure through ultrahigh vacuum magnetron sputtering, forming a nano-scale column structure through self-alignment; and finally a top electrode is made. The method which forms a nano-scale restricting template through pure dry etching is controllable in technique and good in repeatability. The multiple layers of film structures, after optimization, can reduce the critical current of current-induced magnetization reversal, thus making a new generation of random access memory with ultra-high density and low power consumption possible.