The invention relates to a passivation film of a compound type semiconductor silicon device and a passivation generating technology, which belong to the technical field of semiconductor production. The passivation film of the compound type semiconductor silicon device comprises an upper layer film and a lower layer film which are reserved on the section of a silicon base by a photoetching technology, wherein the upper layer film is a nitrogen enriched SiOxNy film, and the lower layer film is an oxygen enriched SiOxNy film. The generating technology comprises the steps: a compact lower oxygen enriched SiOxNy film layer is generated on the silicon base with the section by using a low-pressure chemical gas deposition method, and the stress of the compact lower oxygen enriched SiOxNy film layer is similar to that of silicon; N2O, SiH4 and NH3 are introduced in the same deposition furnace at high temperature of about 740 to 800 DEG C under the environment of 280 to 340 milliliters to grow a nitrogen enriched SiOxNy film layer, the stress of which is close to the stress of the lower oxygen enriched SiOxNy film layer; and after the compound film is finally formed, an SiOxNy compound filmon the section of the silicon base is reserved by the photoetching technology. The invention has the advantages of thermal shock resistance, corrosion resistance, creep resistance, oxidation resistance, low expansion, good photoelectric property, and the like.