The invention discloses a photoresist cleaning agent which contains quaternary ammonium hydroxide, water, alkyl glycol aryl ether, dimethyl sulfoxide, a polycarboxylate inhibitor and an aminoimidazole inhibitor. The photoresist cleaning agent can effectively remove the photoresist (light blockage) and other etching residues on metals, metal alloys or dielectric substrates and has very low corrosivity to metals such as aluminum, copper and the like as well as non-metal materials such as silicon dioxide and the like. The photoresist cleaning agent can further prevent metal surface from generating oxide and has good application prospect in the microelectronics fields such as semiconductor chip cleaning and the like.