The invention discloses a gate drive circuit and a drive method thereof. A voltage-level converter converts the voltage operation level range of an input end signal so as to reduce use of circuit components and lower cost; and a driver stage output component on the high voltage end adopts a P type metal-oxide semiconductor field effect transistor, which is connected in series, to be used as a diverter switch, thereby preventing the matrix effect generating in the general process of manufacturing at a high voltage.