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CN101465332A 半导体芯片及其制造方法和半导体芯片堆叠封装 有权 转让

半导体芯片及其制造方法和半导体芯片堆叠封装
摘要：
提供半导体芯片、制造半导体芯片的方法和半导体芯片堆叠封装。所述半导体芯片包括：半导体衬底和在半导体衬底上的半导体器件。电介质覆盖半导体器件。顶部金属在电介质上并且电连接至半导体器件。深插塞穿透半导体衬底和电介质。互连电连接深插塞和顶部金属。凸点与顶部金属和互连接触。
摘要（英）：

Provided are a semiconductor chip, a method of fabricating a semiconductor chip, and a semiconductor chip stack package. The semiconductor chip includes a semiconductor substrate and a semiconductor device on the semiconductor substrate. A dielectric covers the semiconductor device. A top metal is on the dielectric and electrically connected to the semiconductor device. A deep via penetrates the semiconductor substrate and the dielectric. An interconnection connects the deep via and the top metal electrically. A bump is in contact with the top metal and the interconnection.

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