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发明公开
CN101478020A 半导体发光元件的制造方法 失效 - 放弃专利权

半导体发光元件的制造方法
摘要：
本发明涉及具有Pd电极的半导体发光元件的制造方法，其目的在于提供一种半导体发光元件的制造方法，能够以简易方法回避剥落的绝缘膜上Pd电极向半导体发光元件表面上的附着所引起的成品率降低、焊盘电极未形成部分的发生、p型接触层与焊盘电极接触的问题。该方法具备：在半导体上形成具有开口部的绝缘膜的工序；在该开口部和该绝缘膜上形成Pd电极的工序；对该绝缘膜上的该Pd电极施加物理的力，在残留该开口部的该Pd电极的状态下，将该绝缘膜上的该Pd电极剥离并除去的剥离工序。
摘要（英）：

The invention a method for manufacturing a semiconductor light emitting device with a Pd electrode, aiming at providing a method for manufacturing a semiconductor light emitting device to avoid the problems of the reduced yield caused by adhesion of Pd electrode to semiconductor light emitting device by a simple method, partial formed pad electrode and contact between a p-type contact layer and the pad electrode. A method for manufacturing a semiconductor light emitting device includes forming an insulating film on a semiconductor substrate, the insulating film having an opening therein, forming a Pd electrode in the opening and on the insulating film, and removing the portion of the Pd electrode on the insulating film by the application of a physical force to the portion, while leaving the Pd electrode in the opening.

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