The present invention relates to a charge induction imaging method based on semiconductor layer, wherein the charge induction imaging method comprises the following steps: 1) changing the fluorescent screen of photoelectronic imaging device to the semiconductor layer with a substrate, setting a position sensitive anode at the outer side of vacuum at the back surface of substrate of semiconductor layer, and the range of square resistance of semiconductor layer is 100Momega/piece to 1000Momega/piece; 2) receiving the light signal of measured object by the photoelectronic conversion part of photoelectronic image device, transmitting photon into an electron optical system, entering a microchannel plate after focusing for multiplication, and forming an electron cloud; 3) bombarding the semiconductor layer after the microchannel plate with the electron cloud after electric field acceleration; 4) collecting the charges on the semiconductor layer through charge induction by the position sensitive anode at the back surface of substrate of semiconductor layer; and 5) realizing imaging detection through exteriorly connecting the position sensitive anode with an electron read-out circuit and a computer image output circuit. The charge induction imaging method of the invention settles the technical problems of inferior imaging quality, hard vacuum closing and inconvenient anode changing inprior art.