The invention relates to a high-speed IGBT. Connect-out wires of an emitting electrode and a base electrode are arranged on a lower surface and structure cells of the IGBT on an upper surface are all surrounded by a surface voltage-proof area; if the surface voltage-proof area is constituted by doped layers with lateral variation, electric potentials different from an unconsumed neutral zone can be produced in areas set at the edge of the voltage-proof area under almost any voltage, and the difference is related to the voltage of an external electrode and can be used for controlling the voltage of the emitting electrode and the base electrode, both of which are connected and arranged on the upper surface and the lower surface, thus controlling the injection efficiency of minority carriers and reducing the turn-off time of the IGBT.