Provided is an image sensor having a large ratio of the surface area of a light receiving portion to the surface area of one pixel. A solid-state imaging device comprises solid-state imaging elements arranged on a substrate. The solid-state imaging elements include a signal line formed on the substrate, an island semiconductor region disposed on the signal line, and a pixel selection line connected to an upper part of the island semiconductor region. The island semiconductor region includes a first semiconductor layer disposed on a lower part of the island semiconductor region and connected to the signal line, a second semiconductor layer adjacent to the upper side of the first semiconductor layer, a gate connected through an insulating film to the second semiconductor layer, a charge storage portion connected to the second semiconductor layer and including a third semiconductor layer, the charge amount of which changes when receiving light, and a fourth semiconductor layer disposed adjacent to the upper sides of the second and third semiconductor layers and connected to the pixel selection line. The solid-state imaging elements are arranged in a honeycomb shape on the substrate.