Provided are a vacuum processing method and a vacuum processing apparatus by which a SiH2/SiH ratio is not increased even when a film forming speed is increased, film qualities are prevented from deteriorating and high productivity is obtained. In the vacuum processing method, a substrate (8), which is arranged in a film forming chamber (6) having a depressurized environment, is heated by a uniformly heating plate (heating means) (5), a discharge electrode (3) arranged to face the substrate (8) is supplied with power, and a film is formed on the substrate (8). The film is formed in a state where a difference between the temperature of the substrate (8) and that of the discharge electrode (3) is 30 DEG C or less. Furthermore, the film may be formed by having a gap of 7.5mm or less between the substrate (8) and the discharge electrode (3).