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发明公开
CN101646804A CVD成膜装置 失效 - 权利终止

CVD成膜装置
摘要：
本发明提供一种CVD成膜装置。该成膜装置通过加热机构加热被载置在载置台22的晶片W，同时使成膜用的气体在晶片的表面发生反应通过CVD在晶片W上形成规定的膜，该成膜装置具备具有母材24a和设置在母材的至少背面侧的低辐射率膜24b的覆盖部件24，该覆盖部件覆盖载置台22的晶片W的外侧部分。
摘要（英）：

Disclosed is a film-forming apparatus wherein a predetermined film is formed on a wafer (W) by CVD by reacting a film-forming gas on the surface of the wafer, while heating the wafer (W) placed on a stage (22) with a heating mechanism. This film-forming apparatus also comprises a cover member (24) which is so arranged as to cover the outer portion of the wafer (W) on the stage (22) and has a basemember (24a) and a low emissivity film (24b) arranged on at least the rear surface of the base member.

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