The invention discloses a transistor structure, a dynamic random access memory structure and a manufacturing method thereof. In the dynamic random access memory structure, an active area has an annular cylinder shape, and has a novel vertical transistor structure; a grid electrode of the transistor structure is filled in the hollow annular cylinder; upper and lower source/drain electrodes are respectively positioned on the upper and lower parts of the annular cylinder; an embedded bit line is positioned in a substrate under the transistor structure, a word line is horizontally arranged above the grid electrode, and a capacitor structure is positioned above the word line and the grid electrode, and is electrically connected with the upper source/drain electrode by a node contact; and the node contact has an n-shaped cover body shape, is electrically connected with the capacitor structure through the top surface of the n-shaped cover body-shape, and is electrically connected with the upper source/drain electrode through the side bottoms of the n-shaped cover body shape, and the word line passes through a hollow part of the n-shaped cover body shape of the node contact.