Provided is a photoelectric converting device that has an improved power generating efficiency by virtue of an increased open-circuit voltage. The photoelectric converting device is a photoelectric converting device (100) that comprises a photoelectric converting layer (3) comprising a stack of a p layer (41), an i layer (42), and an n layer (43). The p layer (41) is a nitrogen-containing layer that contains not less than 1% and not more than 25%, in terms of atomic concentration, of nitrogen atoms and brings the crystallization rate of the p layer (41) to not less than 0 and less than 3. Then layer (43) is a nitrogen-containing layer that contains not less than 1% and not more than 20%, in terms of atomic concentration, of nitrogen atoms and brings the crystallization rate of the n layer (43) to not less than 0 and less than 3. Alternatively, a construction may also be adopted in which an interface layer, which is a nitrogen-containing layer containing not less than 1% and not more than 30%, in terms of atomic concentration, of nitrogen atoms, is provided in the interface of the p layer (41) and the i layer (42), or in which an interface layer, which is a nitrogen-containing layer containing not less than 1% and not more than 20%, in terms of atomic concentration, of nitrogen atoms, is provided in the interface of the n layer (43) and the i layer (42).